IRF644NS

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration D2PAK (TO-263) FEATURES 250 V VGS = 10 V 54 9.2 26 Single 0.240 • • • • • • • • Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT D DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. G D S G I2PAK (TO-262) TO-220 S N-Channel MOSFET S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF644NPbF SiHF644N-E3 IRF644N SiHF644N D2PAK (TO-263) IRF644NSPbF SiHF644NS-E3 IRF644NS SiHF644NS D2PAK (TO-263) IRF644NSTRLPbFa SiHF644NSTL-E3a IRF644NSTRLa SiHF644NSTLa D2PAK (TO-263) IRF644NSTRRPbFa SiHF644NSTR-E3a IRF644NSTRRa SiHF644NSTRa I2PAK (TO-262) IRF644NLPbF SiHF644NL-E3 IRF644NL SiHF644NL Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Current Repetitive Avalanche Energy Maximum Power Dissipation Peak Diode Recovery dV/dtc * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 1 TC = 25 °C EAS IAR EAR PD dV/dt VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VGS ID IDM LIMIT ± 20 14 9.9 56 1.0 180e 8.4 15 150 7.9 W/°C mJ A mJ W V/ns A UNIT V WORK-IN-PROGRESS IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw SYMBOL TJ, Tstg LIMIT - 55 to + 175 300d 10 1.1 UNIT °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω IAS = 8.4 A (see fig. 12). c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. This is a calculated value limited to TJ = 175 °C. THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambientc Case-to-Sink, Flat, Greased Surfacec Maximum Junction-to-Case (Drain) Maximum Junction-to-Ambient (PCB Mount)d SYMBOL RthJA RthCS RthJC RthJA TYP. 0.50 MAX. 62 1.0 40 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS Between lead, 6 mm (0.25") from package and center of die contact D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 150 °C VGS = 10 V ID = 8.4 Ab Ab 250 2.0 8.8 0.33 - 4.0 ± 100 25 250 0.240 - V V/°C V nA µA Ω S VDS = 50 V, ID = 8.4 VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1060 140 38 10 21 30 17 4.5 7.5 54 9.2 26 nH ns nC pF VGS = 10 V ID = 8.4 A, VDS = 200 V, see fig. 6 and 13b - VDD = 125 V, ID = 8.4 A, RG = 6.2 Ω, VGS = 10 V, see fig. 10b - G S www.vishay.com 2 Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - 165 1.0 14 A 56 1.3 250 1.6 V ns µC G S TJ = 25 °C, IS = 14 A, VGS = 0 Vb TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. This is only applied to TO-220 package. d. When mounted on 1" square PCB (fr-4 or G-10 material). TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100  VDS, Drain-to-Source Current (V) ID, Drain-to-Source Current (A) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100  TOP 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 1 4.5V 1 20μs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 0.1 0.1 1 20μs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 3 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 100 10000 ID, Drain-to-Source Current (A) TJ = 175°C VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 Ciss TJ = 25°C 10 Coss 100 Crss VDS = 50V 20μs PULSE WIDTH 4 6 8 10 11 13 15 1 10 1 10 100 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 3.5 RDS(on), Drain-to-Source On Resistance (Normalized) ID = 14A 18 ID = 8.4A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 16 VDS = 200V VDS = 125V VDS = 50V 12 8 4 VGS = 10V 0 20 40 60 80 100 120 140160 180 0 0 12 24 36 48 60 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature OG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 100 15 ISD, Reverse Drain Current (A) 12 TJ = 175°C 10 ID, Drain Current (A) 9 1 TJ = 25°C 6 3 0.1 VGS = 0V 0.0 0.4 0.8 1.1 1.5 0 25 50 75 100 125 150 175 VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage TC = Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature RD VDS 1000 VGS D.U.T. + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ID, Drain-to-Source Current (A) 100 OPERATION THIS AREA LIMITED BY R DS (on) RG 10 100μsec 1msec Fig. 10a - Switching Time Test Circuit VDS 90 % 1 0.1 1 Tc = 25°C Tj = 175°C Single Pulse 10 100 10msec 1000 10 % VGS td(on) tr td(off) tf VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 10b - Switching Time Waveforms Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 5 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 10 Thermal Response (ZthJC) 1 D= 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D= t1 / t2 2. Peak TJ = PDM x ZthJC + TC PDM t1 t2 0.01 0.00001 0.001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V VDS tp VDS L Driver RG 20 V tp D.U.T IAS 0.01 Ω + A - VDD IAS Fig. 12b - Unclamped Inductive Waveforms ID 3.4A 5.9A BOTTOM 8.4A TOP Fig. 12a - Unclamped Inductive Test Circuit EAS, Single Pulse Avalanche Energy (mJ) 300 240 180 120 60 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 µF 0.3 µF VGS QGS QG QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit D.U.T + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91038. Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1