IRF9Z14L

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 12 3.8 5.1 Single - 60 0.50 FEATURES • Advanced Process Technology • Surface Mount (IRF9Z14S/SiHF9Z14S) • Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L) • 175 °C Operating Temperature • • • • Fast Switching P-Channel Fully Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION I2PAK (TO-262) D2PAK (TO-263) S G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9Z14L/SiHF9Z14L) is available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRF9Z14SPbF SiHF9Z14S-E3 IRF9Z14S SiHF9Z14S D2PAK (TO-263) IRF9Z14STRLPbFa SiHF9Z14STL-E3a IRF9Z14STRLa SiHF9Z14STLa I2PAK (TO-262) IRF9Z14LPbF SiHF9Z14L-E3 - ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation TC = 25 °C TA = 25 °C VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD LIMIT - 60 ± 20 - 6.7 - 4.7 - 27 0.29 140 - 6.7 4.3 3.7 43 UNIT V A W/°C mJ A mJ W * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91089 S-Pending-Rev. A, 02-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 3.6 mH, RG = 25 Ω, IAS = - 6.7 A (see fig. 12). c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Uses IRF9Z14/SiHF9Z14 data and test conditions. SYMBOL dV/dt TJ, Tstg LIMIT - 4.5 - 55 to + 175 300d UNIT V/ns °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB Mounted, steady-state)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 3.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage www.vishay.com 2 IS ISM VSD MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = - 250 µA Reference to 25 °C, ID = - 1 VGS = ± 20 V VDS = - 60 V, VGS = 0 V VDS = - 48 V, VGS = 0 V, TJ = 150 °C VGS = - 10 V ID = - 4.0 Ab VDS = - 25 V, ID = - 4.0 Ac mA c VDS = VGS, ID = - 250 µA - 60 - 2.0 1.4 - 0.06 - - 4.0 ± 100 - 100 - 500 0.5 - V V/°C V nA µA Ω S Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LS VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5c - 270 170 31 11 63 10 31 7.5 12 3.8 5.1 nH ns nC pF VGS = - 10 V ID = - 6.7 A, VDS = - 48 V, see fig. 6 and 13b, c - VDD = - 30 V, ID = - 6.7 A, RG = 24 Ω, RD = 4.0 Ω, see fig. 10b Between lead, and center of die contact - - - - 6.7 A - 27 - 5.5 V G S TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb Document Number: 91089 S-Pending-Rev. A, 02-Jun-08 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time trr Qrr ton TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/µsb, c 80 96 160 190 ns nC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRF9Z14/SiHF9Z14 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91089 S-Pending-Rev. A, 02-Jun-08 www.vishay.com 3 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91089 S-Pending-Rev. A, 02-Jun-08 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix RD VDS VGS RG D.U.T. + - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % VDD Fig. 10a - Switching Time Test Circuit td(on) VGS 10 % tr td(off) tf 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS RG VDS IAS D.U.T. IAS VDS + V DD VDD tp - 10 V tp 0.01 Ω VDS Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91089 S-Pending-Rev. A, 02-Jun-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 12 V - 10 V QGS QG 0.2 µF 0.3 µF VG VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91089 S-Pending-Rev. A, 02-Jun-08 + D.U.T. - QGD VDS IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + P.W. Period Ripple ≤ 5 % D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver Driver gate drive D= D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current Body diode forward drop * VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91089. Document Number: 91089 S-Pending-Rev. A, 02-Jun-08 + + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD P.W. Period VGS = - 10 V* VDD ISD www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1