IRLL014

IRLL014, SiHLL014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 8.4 3.5 6.0 Single D FEATURES 60 0.20 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION SOT-223 D S G G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. SOT-223 SiHLL014TR-GE3 IRLL014TRPbFa SiHLL014T-E3a IRLL014TRa SiHLL014Ta ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb Note a. See device orientation. SOT-223 SiHLL014-GE3 IRLL014PbF SiHLL014-E3 IRLL014 SiHLL014 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID LIMIT 60 ± 10 2.7 1.7 22 0.025 0.017 100 2.7 0.31 3.1 2.0 4.5 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C IDM Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e EAS Single Pulse Avalanche Energyb IAR Repetitive Avalanche Currenta EAR Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C PD TA = 25 °C Maximum Power Dissipation (PCB Mount)e c dV/dt Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 2.7 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91319 S10-1257-Rev. C, 31-May-10 www.vishay.com 1 IRLL014, SiHLL014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC MIN. TYP. MAX. 60 40 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS Between lead, 6 mm (0.25") from package and center of die contact D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 10 V VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 125 °C VGS = 5.0 V VGS = 4.0 V ID = 1.6 Ab ID = 1.4 Ab 60 1.0 3.2 0.073 - 2.0 ± 100 25 250 0.20 0.28 - V V/°C V nA μA Ω S Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time VDS = 25 V, ID = 1.6 A VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 400 170 42 9.3 110 17 26 4.0 6.0 8.4 3.5 6.0 nH ns nC pF VGS = 5.0 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b - VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω, see fig. 10b - G S IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D - 65 0.33 2.7 A 22 1.6 130 0.65 V ns μC G S TJ = 25 °C, IS = 2.7 A, VGS = 0 Vb TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91319 S10-1257-Rev. C, 31-May-10 IRLL014, SiHLL014 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID, Drain Current (A) ID, Drain Current (A) VGS Top 7.5 V 5.0 V 4.0 V 3.5 V 3.0 V 2.75 V Bottom 2.5 V 0 10 101 150 °C 100 101 10-1 25 °C 10-1 2.25 V 10-2 20 µs Pulse Width VDS = 25 V 2 2.5 3 3.5 4 4.5 5 10-2 20 µs Pulse Width TC = 25 °C 10-1 100 101 10-3 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °C VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) V GS Top 7.5 V 5.0 V 4.0 V 101 3.5 V 3.0 V 2.75 V Bottom 2.5 V 3.0 2.5 2.0 1.5 1.0 0.5 ID = 10 A VGS = 10 V 100 2.25 V 10-1 10-2 20 µs Pulse Width TC = 150 °C 100 101 10-1 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91319 S10-1257-Rev. C, 31-May-10 www.vishay.com 3 IRLL014, SiHLL014 Vishay Siliconix 700 600 ISD, Reverse Drain Current (A) Capacitance (pF) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd TJ = 150 °C 101 500 400 300 Coss 200 100 0 100 101 Crss Ciss 100 TJ = 25 °C 10-1 0.4 VGS = 0 V 0.8 1.2 1.6 2.0 2.4 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 10 VGS, Gate-to-Source Voltage (V) ID = 10 A 103 5 2 6 ID, Drain Current (A) VDS = 48 V VDS = 30 V 102 5 2 Operation in this area limited by RDS(on) 6 10 5 2 100 µs 1 ms 10 ms TC = 25 °C TJ = 150 °C Single Pulse 4 1 5 2 For test circuit see figure 13 2 0 0 2 4 6 0.1 0.1 2 5 8 10 1 2 5 10 2 5 102 2 5 103 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91319 S10-1257-Rev. C, 31-May-10 IRLL014, SiHLL014 Vishay Siliconix VDS 3.0 Rg 2.5 VGS RD D.U.T. + - VDD ID, Drain Current (A) 10 V 2.0 1.5 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 1.0 0.5 0.0 25 50 75 100 125 150 VDS 90 % TC, Case Temperature (°C) 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms 102 Thermal Response (ZthJC) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 Single Pulse (Thermal Response) PDM t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-4 10-3 10-2 0.1 1 101 102 103 10-1 10-2 10-5 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91319 S10-1257-Rev. C, 31-May-10 www.vishay.com 5 IRLL014, SiHLL014 Vishay Siliconix L Vary tp to obtain required IAS Rg VDS tp VDS VDD D.U.T I AS + - V DD VDS 10 V tp 0.01 Ω IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12a - Unclamped Inductive Test Circuit EAS, Single Pulse Avalanche Energy (mJ) 250 ID 1.2 A 1.7 A Bottom 2.7 A Top 200 150 100 50 VDD = 25 V 25 50 75 100 125 150 0 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 µF 0.3 µF VGS QGS QG QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91319 S10-1257-Rev. C, 31-May-10 IRLL014, SiHLL014 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer D.U.T. + - - + Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices ISD Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91319. Document Number: 91319 S10-1257-Rev. C, 31-May-10 www.vishay.com 7 Package Information Vishay Siliconix SOT-223 (HIGH VOLTAGE) D B 3 B1 C A 0.08 (0.003) A 4 3 E 1 2 3 0.10 (0.004) M C B M H 0.20 (0.008) M C A M L1 4xL e e1 4xC 3xB 0.10 (0.004) M C B M θ MILLIMETERS DIM. A B B1 C D E e e1 H L L1 θ ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 6.71 0.91 0.061 BSC 10' MIN. 1.55 0.65 2.95 0.25 6.30 3.30 2.30 BSC 4.60 BSC 7.29 0.264 0.036 MAX. 1.80 0.85 3.15 0.35 6.70 3.70 MIN. 0.061 0.026 0.116 0.010 0.248 0.130 INCHES MAX. 0.071 0.033 0.124 0.014 0.264 0.146 0.0905 BSC 0.181 BSC 0.287 0.0024 BSC 10' Document Number: 91363 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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