LL101A_10

LL101A, LL101B, LL101C Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • Integrated protection ring against static discharge • Low capacitance • Low leakage current • This diode is also available in the DO-35 case with type designation SD101A, B, C and in the SOD-123 case with type designation SD101AW-V, SD101BW-V, SD101CW-V • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 94 9371 Mechanical Data Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Applications • • • • • • HF-Detector Protection circuit Diode for low currents wits a low supply voltage Small battery charger Power supplies DC/DC converter for notebooks Part LL101A LL101B LL101C Type differentiation VR = 60 V, VF at IF 1 mA max. 410 mV VR = 50 V, VF at IF 1 mA max. 400 mV VR = 40 V, VF at IF 1 mA max. 390 mV Ordering code LL101A-GS18 or LL101A-GS08 LL101B-GS18 or LL101B-GS08 LL101C-GS18 or LL101C-GS08 Remarks Tape and Reel Tape and Reel Tape and Reel Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak inverse voltage Power dissipation (infinite heatsink) Forward continuous current Maximum single cycle surge 10 µs square wave 1) Test condition Part LL101A LL101B LL101C Symbol VRRM VRRM VRRM Ptot IF IFSM Value 60 50 40 4001) 30 2 Unit V V V mW mA A Valid provided that electrodes are kept at ambient temperature For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Document Number 85626 Rev. 1.3, 05-Aug-10 LL101A, LL101B, LL101C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction temperature Storage temperature range Thermal resistance junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm Test condition Symbol Tj Tstg RthJA Value 125 - 65 to + 150 320 Unit °C °C K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown Voltage Test condition IR = 10 µA V R = 50 V Leakage current V R = 40 V V R = 30 V IF = 1 m A IF = 1 m A Forward voltage drop IF = 1 m A IF = 15 mA VR = 0 V, f = 1 MHz Diode capacitance VR = 0 V, f = 1 MHz IF = IR = 5 mA, recover to 0.1 IR Part LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C Reverse recovery time Symbol V(BR) V(BR) V(BR) IR IR IR VF VF VF VF VF VF CD CD CD trr Min 60 50 40 200 200 200 410 400 390 1000 950 900 2.0 2.1 2.2 1 Typ. Max Unit V V V nA nA nA mV mV mV mV mV mV pF pF pF ns Typical Characteristics Tamb = 25 °C, unless otherwise specified gll101a_01 gll101a_02 Figure 1. Typ. IF vs. VF for primary conduction through the Schottky barrier Figure 2. Typ. IF of combination Schottky barrrier and PN junction guard ring www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85626 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.3, 05-Aug-10 LL101A, LL101B, LL101C Vishay Semiconductors gll101a_03 gll101a_04 Figure 3. Typical Variation of Reverse Current at Various Temperatures Figure 4. Typical Capacitance Curve as a Function of Reverse Voltage Package Dimensions in millimeters (inches): MiniMELF SOD-80 Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 1.25 (0.49) min. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number 85626 Rev. 1.3, 05-Aug-10 2 (0.079) min. For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 MiniMELF SOD80 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 1.25 (0.49) min. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number: 84013 Rev. 1.3, 12-Jan-07 For technical questions, contact: EMI-filter@vishay.com 2 (0.079) min. www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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