LL4148_04

VISHAY LL4148 / LL4448 Vishay Semiconductors Fast Switching Diode Features • Silicon Epitaxial Planar Diodes • Electrical data identical with the devices 1N4148 and 1N4448 respectively Applications Extreme fast switches 94 9371 Mechanical Data Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 30.8 mg Cathode Band Color: Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part LL4148 LL4448 Type differentiation VRRM = 100 V, VF @ IF 50 mA < 1 V, Single Diodes VRRM = 100 V, VF @ IF 100 mA < 1 V, Single Diodes Ordering code LL4148-GS18 or LL4148-GS08 LL4448-GS18 or LL4448-GS08 Remarks Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation VR = 0 tp = 1 µs Test condition Symbol VRRM VR IFSM IFRM IF IFAV PV Value 100 75 2 500 300 150 500 Unit V V A mA mA mA mW Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition on PC board 50 mm x 50 mm x 1.6 mm Symbol RthJA Tj Tstg Value 500 175 - 65 to + 175 Unit K/W °C °C Document Number 85557 Rev. 1.7, 06-Feb-04 www.vishay.com 1 LL4148 / LL4448 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition I F = 5 mA IF = 50 mA IF = 100 mA Reverse current V R = 20 V VR = 20 V, Tj = 150 °C V R = 75 V Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time IR = 100 µA, tp/T = 0.01, tp = 0.3 ms VR = 0, f = 1MHz, VHF = 50 mV VHF = 2 V, f = 100 MHz IF = IR = 10 mA, iR = 1 m A IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω Symbol VF VF VF IR IR IR V(BR) CD ηr trr trr 45 8 4 100 4 Min 0.62 0.86 0.93 Typ. Max 0.72 1 1 25 50 5 VISHAY Unit V V V nA µA µA V pF % ns ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1000 LL4148 IF - Forward Current ( mA) 1000 LL4448 IF - Forward Current ( mA) 100 Scattering Limit 10 100 Scattering Limit 10 1 Tj = 25 ° C 0.1 0 0.4 0.8 1.2 1.6 2.0 1 Tj = 25 ° C 0.1 0 0.4 0.8 1.2 1.6 2.0 94 9096 V F - Forward Voltage ( V ) 94 9097 V F - Forward Voltage ( V ) Fig. 1 Forward Current vs. Forward Voltage Fig. 2 Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 85557 Rev. 1.7, 06-Feb-04 VISHAY LL4148 / LL4448 Vishay Semiconductors 3.0 C D - Diode Capacitance ( pF ) 1000 I R - Reverse Current ( nA ) 2.5 2.0 1.5 1.0 0.5 0 Tj = 25 ° C 100 f = 1 MHz Tj = 25 ° C Scattering Limit 10 1 1 94 9098 10 V R - Reverse Voltage ( V ) 100 94 9099 0.1 1 10 100 V R - Reverse Voltage ( V ) Fig. 3 Reverse Current vs. Reverse Voltage Fig. 4 Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Cathode indification 1.5 ± 0.1 (0.06 ± 0.004) 3.5 ± 0.2 (0.14 ± 0.008) 0.47 max. (0.02) Mounting Pad Layout 2.50 (0.098) max 1.25 (0.049) min technical drawings according to DIN specifications Glass case Mini Melf / SOD 80 JEDEC DO 213 AA 96 12070 5 (0.197) ref Document Number 85557 Rev. 1.7, 06-Feb-04 2 (0.079) min www.vishay.com 3 LL4148 / LL4448 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85557 Rev. 1.7, 06-Feb-04