LS101B-GS08

VISHAY LS101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop 9612009 Applications HF-Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC / DC converter for notebooks Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part LS101A LS101B LS101C Type differentiation VR = 60 V, VF @ IF1 mA max. 0.41 V VR = 50 V, VF @ IF1 mA max. 0.4 V VR = 40 V, VF @ IF1 mA max. 0.39 V Ordering code LS101A-GS18 or LS101A-GS08 LS101B-GS18 or LS101B-GS08 LS101C-GS18 or LS101C-GS08 Remarks Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Test condition Part LS101A LS101B LS101C Peak forward surge current Repetitive peak forward current Forward current tp = 10 µs Symbol VR VR VR IFSM IFRM IF Value 60 50 40 2 150 30 Unit V V V A mA mA Document Number 85628 Rev. 1.3, 13-Apr-04 www.vishay.com 1 LS101A / 101B / 101C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition on PC board 50 mmx50 mmx1.6 mm Symbol RthJA Tj Tstg Value 320 125 - 65 to + 150 VISHAY Unit K/W °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown Voltage Test condition IR = 10 µA Part LS101A LS101B LS101C Leakage current V R = 50 V V R = 40 V V R = 30 V Forward voltage drop I F = 1 mA LS101A LS101B LS101C LS101A LS101B LS101C IF = 15 mA LS101A LS101B LS101C Diode capacitance VR = 0 V, f = 1 MHz LS101A LS101B LS101C Symbol V(BR)R V(BR)R V(BR)R IR IR IR VF VF VF VF VF VF CD CD CD Min 60 50 40 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 Typ. Max Unit V V V nA nA nA V V V V V V pF pF pF Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 IR - Reverse Current ( µ A) Tj =125 °C C D – Diode Capacitance ( pF ) Tj =150 °C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 16205 Tj=25°C 10 Tj =100 °C 1 Tj =75 °C Tj =50 °C 0.1 Tj =25 °C 0.01 0 16204 5 10 15 20 25 30 35 40 45 50 V R - Reverse V oltage ( V ) 5 10 15 20 25 30 35 40 45 50 V R – Reverse Voltage ( V ) Fig. 1 Reverse Current vs. Reverse Voltage Fig. 2 Diode Capacitance vs. Reverse Voltage www.vishay.com 2 Document Number 85628 Rev. 1.3, 13-Apr-04 VISHAY LS101A / 101B / 101C Vishay Semiconductors 10.00 I F - Forward Current ( mA ) 1.00 0.10 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16206 V F - Forward V oltage ( V ) Fig. 3 Forward Current vs. Forward Voltage Package Dimensions in mm (Inches) (0 7 1. 1.5 ± 0.1 (0.06 ± 0.004) .0 Cathode indification Glass > R 3 (R 0.12) 0.47 max. (0.02) 3.5 ± 0.2 (0.14 ± 0.008) Mounting Pad Layout 2.50 (0.098) max 1.25 (0.049) min technical drawings according to DIN specifications G la ss 7) Glass case Quadro Melf / SOD 80 JEDEC DO 213 AA 5 (0.197) ref 96 12071 Document Number 85628 Rev. 1.3, 13-Apr-04 2 (0.079) min www.vishay.com 3 LS101A / 101B / 101C Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85628 Rev. 1.3, 13-Apr-04