LVB1560-M3-45

New Product LVB1560 Vishay General Semiconductor Low VF Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214, Vol. 1 • Thin single in-Iine package • Oxide planar chip junction • Low forward voltage drop • High surge current capability ~ ~ ~ ~ • High case dielectric strength of 2500 VRMS • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition Case Style GSIB-5S TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 7.5 A, TA = 125 °C TJ max. 15 A 600 V 400 A 10 μA 0.73 V 150 °C General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications specially for Telecom power supply, high efficiency desktop PC and server SMPS: MECHANICAL DATA Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified output current at TC = 125 °C TA = 25 °C SYMBOL VRRM IO IO (1) (2) LVB1560 600 15 UNIT V A 3.6 400 664 - 55 to + 150 A A2s °C Non-repetiitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C IFSM I2t TJ, TSTG Operating junction and storage temperature range Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink Document Number: 89392 Revision: 20-Dec-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product LVB1560 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Instantaneous forward voltage TEST CONDITIONS IF = 7.5 A TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF (1) TYP. 0.87 0.73 0.2 60 1.8 260 MAX. 0.90 V 10 μA μs pF UNIT Reverse current per diode Typical reverse recovery time Typical junction capacitance VR = 600 V IR (2) trr CJ IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance Notes With heatsink Without heatsink, free air SYMBOL RJA RJC (1) (2) (2) (1) LVB1560 25 UNIT °C/W 1.0 EMC SURGE IMMUNITY TEST STANDARD (TA = 25 °C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL VPEAK CLASS VALUE 6 kV maximum IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 μs waveform, R = 2 , TA = 25 °C (1) Note (1) Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2 , 5 times each of positive and negative polarity test ORDERING INFORMATION (Example) PREFERRED P/N LVB1560-M3/45 UNIT WEIGHT (g) 6.9 PREFERRED PACKAGE CODE 45 BASE QUANTITY 20 DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) 20 5 Average Forward Output Current (A) With Heatsink, Sine-Wave, R-Load 15 4 3 10 TC Measurement 2 5 1 Without Heatsink Sine-wave, R-Load, Free Air, TA 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 0 Temperature (°C) Ambient Temperature (°C) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89392 Revision: 20-Dec-10 New Product LVB1560 Vishay General Semiconductor 28 1000 Instantaneous Reverse Current (μA) Forward Power Dissipation (W) 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 TA = 150 °C 100 TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 Average Forward Current ( A ) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Forward Power Dissipation 100 Fig. 5 - Typical Reverse Characteristics Per Diode 1000 TJ = 25 °C f = 1 MHz Vstg = 50 mVP-P Instantaneous Forward Current (A) 10 TA = 150 °C TA = 125 °C TA = 100 °C TA = 25 °C Junction Capacitance (pF) 100 1 10 0.1 0.3 1 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 4 - Typical Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.6 ± 0.2 3.5 ± 0.2 3.2 ± 0.2 2.7 ± 0.2 30 ± 0.3 20 ± 0.3 + 2.5 ± 0.2 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 17.5 ± 0.5 4 ± 0.2 7.5 ± 0.2 7.5 ± 0.2 0.7 ± 0.1 Document Number: 89392 Revision: 20-Dec-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 11 ± 0.2 5 www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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