LVB2560-M3-45

New Product LVB2560 Vishay General Semiconductor Low VF Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214, Vol. 1 • Thin single in-Iine package • Oxide planar chip junction • Low forward voltage drop • High surge current capability ~ ~ ~ ~ • High case dielectric strength of 2500 VRMS • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition Case Style GSIB-5S TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 12.5 A, TA = 125 °C TJ max. 25 A 600 V 550 A 10 μA 0.76 V 150 °C General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications specially for Telecom power supply, high efficiency desktop PC and server SMPS: MECHANICAL DATA Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified output current at TC = 105 °C TA = 25 °C SYMBOL VRRM IO IO (1) (2) LVB2560 600 25 UNIT V A 3.6 550 1255 - 55 to + 150 A A2s °C Non-repetiitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C IFSM I2t TJ, TSTG Operating junction and storage temperature range Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink Document Number: 89393 Revision: 20-Dec-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product LVB2560 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Instantaneous forward voltage TEST CONDITIONS IF = 12.5 A TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF (1) TYP. 0.89 0.76 0.2 140 1.8 330 MAX. 0.92 V 10 μA μs pF UNIT Reverse current per diode Typical reverse recovery time Typical junction capacitance VR = 600 V IR (2) trr CJ IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance Notes With heatsink Without heatsink, free air SYMBOL RJA RJC (1) (2) (2) (1) LVB2560 25 UNIT °C/W 1.0 EMC SURGE IMMUNITY TEST STANDARD (TA = 25 °C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VPEAK VALUE 6 kV maximum IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 μs waveform, R = 2 , TA = 25 °C (1) Note (1) Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2 , 5 times each of positive and negative polarity test ORDERING INFORMATION (Example) PREFERRED P/N LVB2560-M3/45 UNIT WEIGHT (g) 7.1 PREFERRED PACKAGE CODE 45 BASE QUANTITY 20 DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) 30 5 Average Forward Output Current (A) With Heatsink, Sine-Wave, R-Load 25 20 15 TC Measurement 10 4 3 2 5 0 0 20 40 60 80 100 120 140 160 1 Without Heatsink Sine-wave, R-Load, Free Air, TA 0 25 50 75 100 125 150 0 Temperature (°C) Ambient Temperature (°C) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89393 Revision: 20-Dec-10 New Product LVB2560 Vishay General Semiconductor 50 45 1000 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25 Instantaneous Reverse Current (μA) TA = 150 °C 100 TA = 125 °C TA = 100 °C Forward Power Dissipation (W) 10 1 TA = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 Average Forward Current ( A ) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Forward Power Dissipation 100 Fig. 5 - Typical Reverse Characteristics Per Diode 1000 TJ = 25 °C f = 1 MHz Vstg = 50 mVP-P Instantaneous Forward Current (A) 10 TA = 150 °C Junction Capacitance (pF) 1.1 100 1 TA = 125 °C TA = 25 °C 10 TA = 100 °C 0.1 0.2 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 4 - Typical Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.6 ± 0.2 3.5 ± 0.2 3.2 ± 0.2 2.7 ± 0.2 30 ± 0.3 20 ± 0.3 + 2.5 ± 0.2 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 17.5 ± 0.5 4 ± 0.2 7.5 ± 0.2 7.5 ± 0.2 0.7 ± 0.1 Document Number: 89393 Revision: 20-Dec-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 11 ± 0.2 5 www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1