MBR10H150CT

MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1 New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 150V Forward Current 10A Max. Junction Temperature 175°C Dual High-Voltage Schottky Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in high frequency inverters, free wheeling, and polarity protection applications TO-220AB (MBR10H150CT) 0.398 (10.10) 0.382 (8.70) 0.055 (1.40) 0.047 (1.20) 0.343 (8.70) Typ. 0.150 (3.80) 0.139 (3.54) 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.138 (3.50) 0.638 (16.20) 0.598 (15.20) 0.370 (9.40) 0.354 (9.00) Dia. 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.067 (1.70) Typ. Mechanical Data Case: JEDEC TO-220AB, ITO-220AB & TO-262AA molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08oz., 2.24g 0.331 (8.40) Typ. 0.634 (16.10) 0.618 (15.70) 1 0.118 (3.00) Typ. PIN 2 3 1.161 (29.48) 1.105 (28.08) 0.102 (2.60) 0.087 (2.20) PIN 1 PIN 2 CASE 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) PIN 3 0.100 (2.54) Typ. 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) Typ. 0.024 (0.60) 0.018 (0.45) Dimensions in inches and (millimeters) ITO-220AB (MBRF10H150CT) 0.408 (10.36) 0.392 (9.96) 1.29 (3.28) 1.21 (3.08) Dia. 0.108 (2.74) 0.092 (2.34) TO-262AA (MBRB10H150CT-1) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.398 (10.10) 0.382 (9.70) 0.138 (3.50) 0.122 (3.10) 0.141 (3.58) 0.125 (3.18) 0.633 (16.07) 0.601 (15.67) 0.370 (9.39) 0.354 (8.99) 1 PIN 2 3 1 PIN 2 3 K 0.055 (1.40) 0.039 (1.00) 0.630 (16.00) 0.614 (15.60) 0.370 (9.40) 0.354 (9.00) 0.488 (12.4) 0.472 (12.00) 0.425 (10.80) 0.393 (10.00) 1.164 (29.55) 1.108 (28.15) 0.117 (2.96) 0.101 (2.56) PIN 1 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.405 (10.28) 0.389 (9.88) 0.396 (10.05) 0.372 (9.45) 0.039 (1.00) 0.024 (0.60) 0.100 (2.54) Typ. PIN 2 CASE PIN 3 0.531 (13.48) 0.507 (12.88) 0.058 (1.47) Typ. 0.200 (5.08) Typ. 0.024 (0.60) 0.018 (0.45) 0.100 (2.54) Typ. 0.062 (1.57) 0.054 (1.37) 0.200 (5.08) Typ. PIN 1 PIN 3 PIN 2 CASE 0.024 (0.60) 0.018 (0.45) Document Number 88779 18-Jul-03 www.vishay.com 1 MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1 Vishay Semiconductors formerly General Semiconductor Maximum Ratings Parameter (TC = 25°C unless otherwise noted) Symbol VRRM VRWM VDC IF(AV) MBR10H150CT 150 150 150 10 5 160 1.0 10 11.25 10,000 –65 to +175 4500 3500 (2) 1500 (3) (1) Unit V V V A Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current Total device (see fig. 1) Per leg Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) per leg Peak repetitive reverse current per leg at tp = 2µs, 1KHZ Peak non-repetitive reverse surge energy per leg (8/20µs waveform) Non-repetitive avalanche energy per leg at 25°C, IAS = 1.5A, L=10mH Voltage rate of change (rated VR) Operating junction and storage temperature range RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1 second, RH ≤ 30% IFSM IRRM ERSM EAS dv/dt TJ, TSTG VISOL A A mJ mJ V/µs °C V Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Maximum instantaneous forward voltage per leg(4) at at at at IF = IF = IF = IF = 5.0A, TJ = 25°C 5.0A, TJ = 125°C 10A, TJ = 25°C 10A, TJ = 125°C TJ = 25°C TJ = 125°C Symbol Value 0.88 0.72 0.96 0.80 5.0 1.0 Unit VF V µA mA Maximum reverse current per leg at working peak reverse voltage (Note 4) IR Thermal Characteristics (TC = 25°C unless otherwise noted) Parameter Typical thermal resistance per leg Symbol RθJC MBR 2.4 MBRF 4.5 MBRB 2.4 Unit O C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300µs pulse width, 1% duty cycle www.vishay.com 2 Document Number 88779 18-Jul-03 MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Derating Curve (Total) 12 MBR, MBRB 10 MBRF 8 200 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Per Leg Peak Forward Surge Current (A) 180 160 140 120 100 80 60 40 20 0 1 10 100 TJ = TJmax 8.3ms single half-wave (JEDEC Method) Average Forward Current (A) 6 4 2 0 25 50 75 100 125 150 175 Case Temperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Per Leg IF -- Instantaneous Forward Current (A) 100 10,000 Fig. 4 – Typical Reverse Characteristics Per Leg TJ = 175°C 1,000 IR -- Instantaneous Reverse Current (µA) TJ = 175°C 10 TJ = 125°C TJ = 75°C 1 TJ = 25°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 100 TJ = 125°C 10 TJ = 75°C 1 0.1 0.01 TJ = 25°C 0.8 0.9 1.0 1.1 1.2 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Per Leg 10000 100 Fig. 6 – Typical Transient Thermal Impedance Per Leg Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 10 MBRF MBR, MBRB 1 100 10 0.1 0.1 1 10 100 0.01 0.1 1 10 100 Reverse Voltage (V) Document Number 88779 18-Jul-03 t -- Pulse Duration (sec.) www.vishay.com 3