MBR10H45

MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 35 to 60 V Forward Current 10 A Schottky Barrier Rectifiers ITO-220AC (MBRF10Hxx) TO-220AC (MBR10Hxx) 0.415 (10.54) MAX. 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) PIN 1 0.160 (4.06) 0.140 (3.56) 2 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) CASE 0.405 (10.27) 0.383 (9.72) 0.185 (4.70) 0.175 (4.44) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.140 (3.56) DIA. 0.130 (3.30) 0.131 (3.39) DIA. 0.122 (3.08) DIA. 0.055 (1.39) 0.045 (1.14) 0.600 (15.5) 0.580 (14.5) 0.603 (15.32) 0.573 (14.55) 1 0.676 (17.2) 0.646 (16.4) 0.350 (8.89) 0.330 (8.38) PIN 2 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.060 (1.52) PIN 1 0.110 (2.80) 0.100 (2.54) PIN 1 PIN 2 PIN 2 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.022 (0.55) 0.014 (0.36) TO-263AB (MBRB10Hxx) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN K 0.055 (1.40) 0.047 (1.19) 1 K 2 0.624 (15.85) 0.591 (15.00) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) PIN 1 PIN 2 K - HEATSINK Mounting Pad Layout TO-263AB 0.42 (10.66) 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) 0.63 (17.02) Dimensions in inches and (millimeters) 0.360 (9.14) 0.320 (8.13) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed: 250 °C/10 seconds, 0.25" (6.35 mm) from case • Rated for reverse surge and ESD • 175 °C maximum operation junction temperature www.vishay.com 1 Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g Document Number 88780 03-Mar-03 MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings Parameter (TC = 25 °C unless otherwise noted) Symbol VRRM VRWM VDC IF(AV) IFRM EAS IFSM IRRM ERSM VC dv/dt TJ TSTG VISOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 Unit V V V A A mJ A Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (See fig.1) Peak repetitive forward current at TC = 150 °C (20 KHz sq. wave) Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse current at tp = 2.0 µs, 1 KHZ Peak non-repetitive reverse energy (8/20 µs waveform) Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 kΩ Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH ≤ 30% 35 35 35 45 45 45 10 20 80 150 1.0 20 25 10,000 50 50 50 60 60 60 0.5 10 A mJ kV V/µs °C °C V –65 to +175 –65 to +175 4500 3500(2) 1500(3) (1) Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Maximum instantaneous forward voltage(4) at at at at IF = IF = IF = IF = 10 10 20 20 A A A A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ =125 °C TJ = 25 °C TJ =125 °C Symbol MBR10H35, MBR10H45 MBR10H50, MBR10H60 Typ – 0.49 – 0.62 – 4.0 Max 0.63 0.55 0.75 0.68 100 12 Typ – 0.57 – 0.68 – 2.0 Max 0.71 0.61 0.85 0.71 100 12 Unit VF V µA mA Maximum instantaneous reverse current at rated DC blocking voltage(4) IR Thermal Characteristics (TC = 25 °C unless otherwise noted) Parameter Maximum thermal resistance Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink Symbol RθJC MBR 2.0 MBRF 4.0 MBRB 2.0 Unit °C/W (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300 µs pulse width, 1% duty cycle Ordering Information Product MBR10H35 – MBR10H60 MBRF10H35 – MBRF10H60 MBRB10H35 – MBRB10H60 Case TO-220AC ITO-220AC TO-263AB Package Code 45 45 31 45 81 Package Option Anti-Static tube, 50/tube, 2K/carton Anti-Static tube, 50/tube, 2K/carton 13” reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13” reel, 800/reel, 4.8K/carton Document Number 88780 03-Mar-03 www.vishay.com 2 MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve 15 175 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Current (A) 150 MBR, MBRB 10 125 100 75 50 25 MBRF 5 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Instantaneous Reverse Leakage Current (mA) 100 100 Fig. 4 – Typical Reverse Characteristics Instantaneous Forward Current (A) 10 10 TJ = 150°C 1.0 TJ = 150°C 1 TJ = 125°C 0.1 0.01 MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60 TJ = 25°C 0 20 40 60 80 100 TJ = 25°C TJ = 125°C 0.1 MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.001 0.0001 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance 10000 MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60 Fig. 6 – Typical Transient Thermal Impedance 10 Transeint Thermal Impedance (°C/W) pF - Junction Capacitance TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p 1000 1 100 0 1 10 100 0.1 0.01 0.1 1 10 Reverse Voltage (V) Document Number 88780 03-Mar-03 t, Pulse Duration (sec.) www.vishay.com 3