MBR1100

VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC DO-204AL PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-204AL (DO-41) 1A 100 V 0.68 V 1.0 mA at 125 °C 150 °C Single die 1.0 mJ • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-MBR1100... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 1 Apk, TJ = 125 °C Range CHARACTERISTICS Rectangular waveform VALUES 1.0 100 200 0.68 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBR1100 100 VS-MBR1100-M3 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 4 Maximum peak one cycle non-repetitive surge current See fig. 6 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 85 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 0.5 A, L = 8 mH Current decaying linearly to zero in 1 μs Frequency limited by, TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 10 200 50 1.0 0.5 mJ A A UNITS Revision: 21-Sep-11 Document Number: 93438 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 1A Maximum forward voltage drop See fig. 1 VFM (1) 2A 1A 2A Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.85 0.96 0.68 0.78 0.5 1.0 35 8.0 10 000 mA pF nH V/µs V UNITS VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to lead Approximate weight Marking device Notes (1) (2) SYMBOL TJ (1), TStg RthJL (2) DC operation See fig. 4 TEST CONDITIONS VALUES - 40 to 150 80 0.33 0.012 UNITS °C °C/W g oz. Case style DO-204AL (DO-41) (JEDEC) MBR1100 dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB, thermal probe connected to lead 2 mm from package Revision: 21-Sep-11 Document Number: 93438 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors Allowable Case Temperature (°C) 160 140 120 100 80 60 40 20 0 see note (1) 0 93438_04 IF - Instantaneous Forward Current (A) 10 DC TJ = 150 °C TJ = 125 °C TJ = 25 °C Square wave (D = 0.50) 80 % Rated VR applied 0.1 0 0.4 0.8 1.2 1.6 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 93438_01 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 1 10 IR - Reverse Current (mA) Average Power Loss (W) 1 0.1 TJ = 150 °C 0.8 TJ = 125 °C 0.01 0.001 0.6 RMS Limit 0.4 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC DC TJ = 25 °C 0.0001 0 0 20 40 60 80 100 0.2 0 0 93438_05 0.5 1 1.5 93438_02 VR - Reverse Voltage (V) Average Forward Current - IF(AV) (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 Fig. 5 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 At Any Rated Load Condition And With rated VRRM Applied Following Surge 10 10 100 1000 10 000 10 0 93438_03 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 93438_06 tp - Square Wave Pulse Duration (µs) Fig. 6 - Maximum Non-Repetitive Surge Current (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 21-Sep-11 Document Number: 93438 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1100, VS-MBR1100-M3 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS- MBR 1 2 1 3 100 4 TR 5 -M3 6 1 2 3 4 5 6 - Vishay Semiconductors product Schottky MBR series Current rating: 1 = 1 A Voltage rating: 100 = 100 V TR = Tape and reel package None = Bulk package Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-MBR1100 VS-MBR1100TR VS-MBR1100-M3 VS-MBR1100TR-M3 QUANTITY PER T/R 1000 5000 1000 5000 MINIMUM ORDER QUANTITY 1000 5000 1000 5000 PACKAGING DESCRIPTION Bulk Tape and reel Bulk Tape and reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95241 www.vishay.com/doc?95304 www.vishay.com/doc?95338 Revision: 21-Sep-11 Document Number: 93438 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 5.21 (0.205) MAX. 1.27 (0.050) MAX. Flash (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Revision: 29-Aug-11 Document Number: 95241 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000