MSE1PD

New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES eSMP ® Series • • • • • • Top View Bottom View MicroSMP • • • Very low profile - typical height of 0.65 mm Ideal for automated placement Oxide planar chip junction Low forward voltage drop, low leakage current ESD capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 1.0 A IR TJ max. 1.0 A 100 V, 200 V, 400 V, 600 V 20 A 0.925 V 1 μA 175 °C MECHANICAL DATA Case: MicroSMP Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end TYPICAL APPLICATIONS General purpose, polarity protection, and rail-to-rail protection in both consumer and automotive applications. MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VRRM IF(AV) IFSM TJ, TSTG SYMBOL MSE1PB SB 100 MSE1PD SD 200 1.0 20 - 55 to + 175 MSE1PG SG 400 MSE1PJ SJ 600 V A A °C UNIT ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A Maximum instantaneous forward voltage IF = 1.0 A IF = 0.5 A IF = 1.0 A Maximum reverse current Typical reverse recovery time Typical junction capacitance Rated VR TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C IR (2) trr CJ SYMBOL TYP. 0.940 1.016 0.834 0.925 3.7 780 5 MAX. 1.1 0.98 1.0 50 μA ns pF V UNIT IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Document Number: 89067 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product MSE1PB thru MSE1PJ Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL RJA (1) Typical thermal resistance RJL RJC (1) (1) MSE1PB MSE1PD 110 30 40 MSE1PG MSE1PJ UNIT °C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. R JL is measured at the terminal of cathode band. IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C, unless otherwise noted) STANDARD AEC-Q101-001 AEC-Q101-002 JESD22-A114 JESD22-A115 IEC 61000-4-2 (2) TEST TYPE Human body model (contact mode) Machine model (contact mode) Human body model (contact mode) Machine model (contact mode) Human body model (contact mode) Human body model (air-discharge mode) (1) TEST CONDITIONS C = 100 pF, R = 1.5 kW C = 200 pF, R = 0 W C = 150 pF, R = 1.5 kW C = 200 pF, R = 0 W C = 150 pF, R = 150 W C = 150 pF, R = 150 W VC SYMBOL CLASS H3B M4 3B C 4 4 VALUE > 8 kV > 400 V > 8 kV > 400 V > 8 kV > 15 kV Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N MSE1PJ-M3/89A MSE1PJHM3/89A (1) Note (1) Automotive grade UNIT WEIGHT (g) 0.006 0.006 PREFERRED PACKAGE CODE 89A 89A BASE QUANTITY 4500 4500 DELIVERY MODE 7" diameter plastic tape and reel 7" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 1.2 D = 0.8 1.0 1.0 Average Forward Rectified Current (A) 0.8 Average Power Loss (W) D = 0.5 0.8 D = 0.2 D = 0.1 0.4 D = 0.3 D = 1.0 0.6 0.6 T 0.4 TL Measured at the Cathode Band Terminal 0.2 0.2 D = tp/T tp 0 95 105 115 125 135 145 155 165 175 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve www.vishay.com 2 Fig. 2 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: 89067 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product MSE1PB thru MSE1PJ Vishay General Semiconductor 10 10 Instantaneous Forward Current (A) TJ = 175 °C 1 TJ = 25 °C TJ = 150 °C 0.1 TJ = 50 °C TJ = 75 °C TJ = 100 °C TJ = 125 °C 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 Junction Capacitance (pF) 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 1000 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (μA) TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 25 °C 0.01 Junction to Ambient 100 10 0.001 10 20 30 40 50 60 70 80 90 100 1 0.01 0.1 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP Cathode Band 0.059 (1.50) 0.043 (1.10) 0.030 (0.75) 0.022 (0.55) 0.055 (1.40) 0.047 (1.20) 0.039 (0.98) 0.031 (0.78) 0.030 (0.75) 0.022 (0.55) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) Mounting Pad Layout 0.079 (2.00) 0.032 (0.80) 0.029 (0.73) 0.025 (0.63) 0.011 (0.27) 0.005 (0.12) 0.043 (1.10) 0.032 (0.80) 0.020 (0.50) Document Number: 89067 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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