MSP3V3

New Product MSP3V3 Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Very low profile - typical height of 0.68 mm • Ideal for automated placement • Oxide planar chip junction • Uni-directional polarity only • Peak pulse power: 100 W (10/1000 µs) • ESD capability: 15 kV (air), 8 kV (contact) • Meets MSL level 1, per J-STD-020C, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Halogen-free MECHANICAL DATA Case: MicroSMP Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC-Q101 qualified) Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, high reliability/automotive grade (AEC-Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end eSMP TM Series Top View Bottom View MicroSMP PRIMARY CHARACTERISTICS VWM PPPM IFSM TJ max. 3.3 V 100 W 25 A 150 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units specifically for protecting 3.3 V supplied sensitive equipment against transient overvoltages. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation (1)(2) Peak pulse current with a 10/1000 µs waveform (Fig. 1) Peak pulse current with a 8/20 µs waveform (Fig. 1) Non repetitive peak forward surge current 8.3 ms single half sine-wave (2) Power dissipation TL = 120 °C (2) SYMBOL PPPM IPPM IPPM IFSM PD TJ, TSTG VALUE 100 13.7 75 25 1.0 - 55 to + 150 UNIT W A A A W °C Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 1 (2) Mounted on 6.0 x 6.0 mm copper pads to each terminal Document Number: 88486 Revision: 21-Aug-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product MSP3V3 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR AT IT MIN. V MSP3V3 KC 4.1 mA 1.0 µA 200 MAXIMUM REVERSE LEAKAGE CURRENT IR AT VWM MAX. V 3.3 MAXIMUM CLAMPING VOLTAGE AT VC AT IPPM 10/1000 µs V 7.3 A 13.7 MAXIMUM CLAMPING VOLTAGE AT VC AT IPPM 8/20 µs V 11.0 A 75 (10-4/°C) - 5.3 TYPICAL TEMP. COEFFICIENT OF VBR TYPICAL JUNCTION CAPACITANCE CJ AT 0 V 1 MHz pF 850 DEVICE TYPE DEVICE MARKING CODE THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 6.0 x 6.0 mm copper pad areas. RθJL is measured at the terminal of cathode band. SYMBOL RθJA RθJL VALUE 125 30 UNIT °C/W IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C unless otherwise noted) STANDARD AEC-Q101-001 IEC-61000-4-2 (2) Notes: (1) Immunity to IEC-61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard TEST TYPE Human body model (contact mode) Human body model (air discharge mode) (1) TEST CONDITIONS C = 100 pF, R = 1.5 kΩ C = 150 pF, R = 150 Ω SYMBOL VC CLASS H3B 4 VALUE > 8 kV > 15 kV ORDERING INFORMATION (Example) PREFERRED P/N MSP3V3-E3/89A MSP3V3HE3/89A (1) MSP3V3-M3/89A MSP3V3HM3/89A (1) Note: (1) High reliability/automotive grade (AEC-Q101 qualified) UNIT WEIGHT (g) 0.006 0.006 0.006 0.006 PREFERRED PACKAGE CODE 89A 89A 89A 89A BASE QUANTITY 4500 4500 4500 4500 DELIVERY MODE 7" diameter plastic tape and reel 7" diameter plastic tape and reel 7" diameter plastic tape and reel 7" diameter plastic tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88486 Revision: 21-Aug-08 New Product MSP3V3 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 10 IPPM - Peak Pulse Current, % IRSM tr = 10 µs t r = 8 µs Peak Value IPPM Peak Forward Current (A) TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM 100 1 TJ = 150 °C Half Value - IPP IPPM 2 50 td = 1000 µs td = 20 µs td 0 0 1.0 2.0 3.0 4.0 0.1 TJ = 25 °C 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t - Time (ms) VF - Forward Voltage Drop (V) Figure 1. Pulse Waveform Figure 4. Typical Peak Forward Voltage Drop vs. Peak Forward Current 100 1000 PPPM - Peak Pulse Power (kW) CJ - Junction Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 1 2 3 4 10 1 0.1 0.01 0.1 1 10 100 1000 10 000 td - Pulse Width (µs) Reverse Voltage (V) Figure 2. Peak Pulse Power Rating Curve Figure 5. Typical Junction Capacitance 70 60 50 40 30 20 10 0 25 50 75 100 125 150 1000 Transient Thermal Impedance (°C/W) Reverse Leakage Current (µA) 100 10 1 0.01 0.1 1 10 100 1000 TJ - Junction Temperature (°C) t - Pulse Duration (s) Figure 3. Relative Variation of Leakage Current vs. Junction Temperature Figure 6. Typical Transient Thermal Impedance Document Number: 88486 Revision: 21-Aug-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product MSP3V3 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP Cathode Band 0.059 (1.50) 0.043 (1.10) 0.030 (0.75) 0.022 (0.55) 0.055 (1.40) 0.047 (1.20) 0.039 (0.98) 0.031 (0.78) 0.030 (0.75) 0.022 (0.55) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) Mounting Pad Layout 0.079 (2.00) 0.032 (0.80) 0.029 (0.73) 0.025 (0.63) 0.011 (0.27) 0.005 (0.12) 0.043 (1.10) 0.032 (0.80) 0.020 (0.50) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88486 Revision: 21-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1