MURB1020CTTRLPBF

VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Vishay High Power Products Ultrafast Rectifier, 2 x 5 A FRED Pt® FEATURES VS-MURB1020CTPbF VS-MURB1020CT-1PbF • • • • • Base common cathode 2 Base common cathode 2 Ultrafast recovery time Low forward voltage drop Low leakage current 175 °C operating junction temperature Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified 1 2 3 Anode 2 1 2 3 Anode 2 Anode Common 1 cathode Anode Common 1 cathode DESCRIPTION/APPLICATIONS MUR.. series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. D2PAK TO-262 PRODUCT SUMMARY trr IF(AV) VR 25 ns 2x5A 200 V ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current per leg total device SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg Rated VR, square wave, 20 kHz, TC = 149 °C Rated VR, TC = 149 °C TEST CONDITIONS MAX. 200 5 10 50 10 - 65 to 175 °C A UNITS V Non-repetitive peak surge current per leg Peak repetitive forward current per leg Operating junction and storage temperatures ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR VF IR = 100 μA IF = 5 A, TJ = 125 °C Forward voltage IF = 10 A, TJ = 125 °C IF = 10 A, TJ = 25 °C Reverse leakage current Junction capacitance Series inductance IR CT LS VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 200 TYP. 0.87 1.02 1.12 8 8.0 MAX. 0.99 1.20 1.25 10 250 μA pF nH V UNITS Document Number: 94518 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Vishay High Power Products Ultrafast Rectifier, 2 x 5 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr IF = 0.5 A, IR = 1.0 A, IREC = 0.25 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 5 A dIF/dt = 200 A/μs VR = 160 V MIN. TYP. 24 35 3.3 5.0 33 76 MAX. 35 25 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style D2PAK Case style TO-262 SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 0.5 2.0 0.07 MAX. 175 5 50 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C MURB1020CT MURB1020CT-1 www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94518 Revision: 11-Mar-10 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Ultrafast Rectifier, 2 x 5 A FRED Pt® IF - Instantaneous Forward Current (A) 100 100 TJ = 175 °C Vishay High Power Products IR - Reverse Current (μA) 10 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 0.001 0.0001 TJ = 25 °C TJ = 100 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 94518_02 0 40 80 120 160 200 94518_01 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics 100 CT - Junction Capacitance (pF) TJ = 25 °C 10 1 1 94518_03 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 0.1 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 0.01 0.00001 0.0001 0.001 94518_04 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94518 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Vishay High Power Products 180 Ultrafast Rectifier, 2 x 5 A FRED Pt® 50 IF = 10 A IF = 5 A Allowable Case Temperature (°C) 170 40 DC 160 trr (ns) Square wave (D = 0.50) Rated VR applied See note (1) 30 150 140 20 VR = 160 V TJ = 125 °C TJ = 25 °C 6 8 94518_07 130 0 94518_05 2 4 10 100 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 7 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 160 140 120 IF = 10 A IF = 5 A Average Power Loss (W) 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC Qrr (nC) RMS limit 100 80 60 40 20 0 100 VR = 160 V TJ = 125 °C TJ = 25 °C 1000 94518_06 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 94518_08 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94518 Revision: 11-Mar-10 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Ultrafast Rectifier, 2 x 5 A FRED Pt® Vishay High Power Products VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94518 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 VS-MURB1020CTPbF, VS-MURB1020CT-1PbF Vishay High Power Products ORDERING INFORMATION TABLE Device code Ultrafast Rectifier, 2 x 5 A FRED Pt® VS- MUR 1 1 2 3 4 5 6 7 8 2 B 3 10 4 20 5 CT 6 -1 7 TRL 8 P 9 HPP product suffix Ultrafast MUR series B = D2PAK/TO-262 Current rating (10 = 10 A) Voltage rating (20 = 200 V) CT = Center tap (dual) None = D2PAK -1 = TO-262 None = Tube (50 pieces) TRL = Tape and reel (left oriented, for D2PAK package) TRR = Tape and reel (right oriented, for D2PAK package) 9 - PbF = Lead (Pb)-free (for TO-262 and D2PAK tube) P = Lead (Pb)-free (for D2PAK TRR and TRL) LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95014 www.vishay.com/doc?95008 www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94518 Revision: 11-Mar-10 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 (7) e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 Outline conforms to JEDEC outline TO-263AB For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A (3) L1 Seating plane 1 L2 23 C C D1 (3) A B A c2 E D B B L (2) 3 x b2 3xb 2xe 0.010 M A M B c A1 A E1 Section A - A Plating (4) b1, b3 Base metal c1 (3) Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode c (4) (b, b2) Section B - B and C - C Scale: None Lead tip SYMBOL A A1 b b1 b2 b3 c c1 c2 D D1 E E1 e L L1 L2 MILLIMETERS MIN. 4.06 2.03 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 6.86 9.65 7.90 2.54 BSC 13.46 3.56 14.10 1.65 3.71 (6) INCHES MAX. 4.83 3.02 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 8.00 10.67 8.80 MIN. 0.160 0.080 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 0.270 0.380 0.311 0.100 BSC 0.530 0.140 0.555 0.065 0.146 MAX. 0.190 0.119 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 0.315 0.420 0.346 NOTES 4 4 4 2 3 2, 3 3 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline www.vishay.com 2 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1