MURD620CTTRRPBF

VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt® Base common cathode 4 FEATURES • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature D-PAK (TO-252AA) 2 Common cathode 1 3 Anode Anode • Compliant to RoHS Directive 2002/95/EC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION/APPLICATIONS PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation D-PAK (TO-252AA) 2x3A 200 V 1.0 V See Recovery table 175 °C Common cathode VS-MURD620CTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current per device Non-repetitive peak surge current Peak repetitive forward current per diode Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg Rated VR, square wave, 20 kHz, TC = 146 °C Total device, rated VR, TC = 146 °C TEST CONDITIONS MAX. 200 6 50 6 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR IR = 100 μA IF = 3 A Forward voltage VF IF = 3 A, TJ = 125 °C IF = 6 A IF = 6 A, TJ = 125 °C Reverse leakage current Junction capacitance Series inductance IR CT LS VR = VR rated TJ = 125 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 200 TYP. 12 8.0 MAX. 1.0 0.96 1.2 1.13 5 250 μA pF nH V UNITS Document Number: 94084 Revision: 13-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 3 A dIF/dt = 200 A/μs VR = 160 V MIN. TYP. 19 26 3.1 4.6 30 60 MAX. 35 25 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style D-PAK SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 0.3 0.01 MAX. 175 9.0 80 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C MURD620CT www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94084 Revision: 13-Jan-11 VS-MURD620CTPbF Ultrafast Rectifier, 2 x 3 A FRED Pt® IF - Instantaneous Forward Current (A) 100 100 Vishay Semiconductors IR - Reverse Current (µA) TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C TJ = 100 °C 0.1 TJ = 25 °C 10 1 1 TJ = 175 °C TJ = 150 °C TJ = 25 °C 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0 50 100 150 200 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 CT - Junction Capacitance (pF) TJ = 25 °C 10 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 . 1 0.0001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94084 Revision: 13-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-MURD620CTPbF Vishay Semiconductors 180 Ultrafast Rectifier, 2 x 3 A FRED Pt® 50 VR = 30 V TJ = 125 °C TJ = 25 °C IF = 3 A IF = 6 A 30 Allowable Case Temperature (°C) 170 40 160 DC 150 140 130 See note (1) 120 0 1 2 3 4 5 10 100 Square wave (D = 0.50) Rated VR applied trr (ns) 20 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 4.5 4.0 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 140 120 100 VR = 30 V TJ = 125 °C TJ = 25 °C IF = 6 A IF = 3 A Average Power Loss (W) 3.5 3.0 2.5 2.0 1.5 1.0 DC 0.5 0 0 1 2 3 4 5 RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 Qrr (nC) 80 60 40 20 0 100 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94084 Revision: 13-Jan-11 VS-MURD620CTPbF Ultrafast Rectifier, 2 x 3 A FRED Pt® VR = 200 V Vishay Semiconductors 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94084 Revision: 13-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-MURD620CTPbF Vishay Semiconductors ORDERING INFORMATION TABLE Ultrafast Rectifier, 2 x 3 A FRED Pt® Device code VS- MUR 1 1 2 3 4 5 6 7 8 2 D 3 6 4 20 5 CT 6 TRL PbF 7 8 Vishay Semiconductors product Ultrafast MUR series D = D-PAK Current rating (6 = 6 A) Voltage rating (20 = 200 V) CT = Center tap (dual) Tape and reel suffix PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) Dimensions Part marking information Packaging information www.vishay.com/doc?95016 www.vishay.com/doc?95059 www.vishay.com/doc?95033 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94084 Revision: 13-Jan-11 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74) E1 4 0.245 MIN. (6.23) 3 2 1 (2) L5 b b2 2x e Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L 0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) (L1) H (7) C Seating plane A1 SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes (1) (2) (3) (4) (5) MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 - INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 - NOTES SYMBOL e H L L1 MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC NOTES 2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35° 0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3 3 L2 L3 L4 5 3 5 3 L5 Ø Ø1 Ø2 Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA (6) (7) (8) Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1