NSB8AT

NSxT, NSFxT, NSBxT Vishay Semiconductors formerly General Semiconductor Glass Passivated General Purpose Plastic Rectifier Reverse Voltage 50 to 1000 Forward Current 8.0A ITO-220AC (NSFxT) 0.405 (10.27) 0.383 (9.72) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.140 (3.56) DIA. 0.130 (3.30) 0.131 (3.39) DIA. 0.122 (3.08) TO-220AC (NSxT) 0.415 (10.54) MAX. 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) PIN 1 0.160 (4.06) 0.140 (3.56) 2 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) CASE 1 0.185 (4.70) 0.175 (4.44) DIA. 0.055 (1.39) 0.045 (1.14) 0.600 (15.5) 0.580 (14.5) 0.676 (17.2) 0.646 (16.4) 0.350 (8.89) 0.330 (8.38) PIN 2 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.191 (4.85) 0.171 (4.35) 0.060 (1.52) PIN 1 PIN 2 0.110 (2.80) 0.100 (2.54) PIN 1 PIN 2 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.022 (0.55) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36) TO-263AB (NSBxT) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN K 0.055 (1.40) 0.047 (1.19) 1 K 2 0.624 (15.85) 0.591 (15.00) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) PIN 1 PIN 2 K - HEATSINK 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout TO-263AB 0.42 (10.66) 0.360 (9.14) 0.320 (8.13) 0.33 (8.38) 0.63 (17.02) Dimensions in inches and (millimeters) 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.08 (2.032) 0.24 (6.096) 0.095 (2.41) 0.12 (3.05) 0.205 (5.20) 0.195 (4.95) Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High forward current capability • High surge current capability • Low forward voltage drop • Glass passivated chip junction • High temperature soldering guaranteed: 260°C/10 seconds, 0.160” (4.06mm) lead length Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Torque: 10 in. -lbs. max. Mounting Position: Any Weight: 0.064 ounce, 1.81 grams Document Number 88690 08-Jul-02 www.vishay.com 1 NSxT, NSFxT, NSBxT Vishay Semiconductors formerly General Semiconductor Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC=100°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Operating junction and storage temperature range RMS Isolation voltage (NSF type only) from terminals to heatsink with t = 1.0 second, RH ≤ 30% Symbols VRRM VRMS VDC IF(AV) NS8 AT 50 35 50 NS8 BT 100 70 100 NS8 DT 200 140 200 NS8 GT 400 280 400 8.0 NS8 JT 600 420 600 NS8 KT 800 560 800 NS8 MT 1000 700 1000 Units V V V A IFSM TJ, TSTG VISOL 125 -55 to +150 4500 3500(2) 1500(3) (1) A °C V Electrical Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbols VF IR CJ NS8 AT NS8 BT NS8 DT NS8 GT 1.1 10 100 55 NS8 JT NS8 KT NS8 MT Units V µA pF Maximum instantaneous forward voltage at 8.0A Maximum DC reverse current at rated DC blocking voltage TC=25°C TC=100°C Typical junction capacitance at 4.0V, 1MHz Thermal Characteristics Parameter Typical thermal resistance (4) Ratings at 25°C ambient temperature unless otherwise specified. Symbols RΘJC NSxT 3.0 NSFxt 5.0 NSBxt 3.0 Units °C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9mm (0.19”) (4) Thermal resistance from junction to case mounted on heat sink www.vishay.com 2 Document Number 88690 08-Jul-02 NSxT, NSFxT, NSBxT Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (T 10 A = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve 175 60 HZ Resistive or Inductive Load Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) 150 125 1.0 Cycle 100 75 50 25 0 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Current (A) 8.0 6.0 4.0 2.0 0 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics 100 100 Fig. 4 – Typical Reverse Characteristics Instantaneous Reverse Current (µA) Instantaneous Forward Current (A) 10 Pulse Width = 300µs 1% Duty Cycle 10 TJ = 100°C 1 1 TJ = 75°C 0.1 0.6 0.1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 TJ = 25°C 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Per Leg 120 TJ = 25°C f = 1.0MHZ Vsig = 50MVp-p Junction Capacitance (pF) 100 80 60 40 20 0 0.1 1 10 100 1,000 Reverse Voltage (V) Document Number 88690 08-Jul-02 www.vishay.com 3