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Note

Note

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    Note - Small Signal Zener Diodes, Dual - Vishay Siliconix

  • 数据手册
  • 价格&库存
Note 数据手册
AZ23-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES 2 1 • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard 3 20456 • The parameters are valid for both diodes in one case. VZ and Rzj of the two diodes in one case is  5 % • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS PARAMETER VZ range nom. Test current IZT VZ specification Int. construction VALUE 2.7 to 51 5 Pulse current Dual UNIT V mA Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 ORDERING INFORMATION DEVICE NAME AZ23-V-G-series AZ23-V-G-series ORDERING CODE AZ23-V-G-series-18 AZ23-V-G-series-08 TAPED UNITS PER REEL 10 000 (8 mm tape on 13" reel) 3000 (8 mm tape on 7" reel) MINIMUM ORDER QUANTITY 10 000 15 000 PACKAGE PACKAGE NAME SOT-23 WEIGHT 8.1 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation Junction to ambient air Junction temperature Storage temperature range Zener current TEST CONDITION Device on fiberglass substrate, see layout on page 6 Device on fiberglass substrate, see layout on page 6 SYMBOL Ptot RthJA Tj Tstg IZ VALUE 300 420 150 - 65 to + 150 Ptot/VZ UNIT mW K/W °C °C mA Rev. 1.2, 31-Aug-11 Document Number: 85867 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-G-Series www.vishay.com Vishay Semiconductors TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VZ at IZT 10-4/°C MAX. < 500 < 500 < 500 < 500 < 500 < 500 < 500 < 480 < 400 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 250 < 250 < 250 < 250 < 300 < 700 < 750 < 750 MIN. -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 -3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 MAX. -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 9.5 9.5 10 10 10 10 10 10 10 12 12 12 12 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE MIN. AZ23C2V7-V-G AZ23C3V0-V-G AZ23C3V3-V-G AZ23C3V6-V-G AZ23C3V9-V-G AZ23C4V3-V-G AZ23C4V7-V-G AZ23C5V1-V-G AZ23C5V6-V-G AZ23C6V2-V-G AZ23C6V8-V-G AZ23C7V5-V-G AZ23C8V2-V-G AZ23C9V1-V-G AZ23C10-V-G AZ23C11-V-G AZ23C12-V-G AZ23C13-V-G AZ23C15-V-G AZ23C16-V-G AZ23C18-V-G AZ23C20-V-G AZ23C22-V-G AZ23C24-V-G AZ23C27-V-G AZ23C30-V-G AZ23C33-V-G AZ23C36-V-G AZ23C39-V-G AZ23C43-V-G AZ23C47-V-G AZ23C51-V-G D41 D42 D43 D44 D45 D46 D47 D48 D49 D50 D51 D52 D53 D54 D55 D56 D57 D58 D59 D60 D61 D62 D63 D64 D65 D66 D67 D68 D69 D70 D71 D72 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 VZ at IZT1 V NOM. 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 MAX. 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 50 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 TEST CURRENT IZT1 mA IZT2 REVERSE VOLTAGE VR at IR V MAX. > 0.8 >1 >2 >3 >5 >6 >7 > 7.5 > 8.5 >9 > 10 > 11 > 12 > 14 > 15 > 17 > 18 > 20 > 22.5 > 25 > 27 > 29 > 32 > 35 > 38 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 nA MAX. 75 (< 83) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 70 (< 78) 30 (< 60) 10 (< 40) 4.8 (< 10) 4.5 (< 8) 4 (< 7) 4.5 (< 7) 4.8 (< 10) 5.2 (< 15) 6 (< 20) 7 (< 20) 9 (< 25) 11 (< 30) 13 (< 40) 18 (< 50) 20 (< 50) 25 (< 55) 28 (< 80) 30 (< 80) 35 (< 80) 40 (< 80) 40 (< 90) 50 (< 90) 60 (< 100) 70 (< 100) 70 (< 100) DYNAMIC RESISTANCE ZZ at IZT1 ZZK at IZT2  Note (1) Tested with pulses t = 5 ms p Rev. 1.2, 31-Aug-11 Document Number: 85867 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-G-Series www.vishay.com Vishay Semiconductors TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VZ at IZT 10-4/°C MAX. < 500 < 500 < 500 < 500 < 500 < 500 < 500 < 480 < 400 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 250 < 250 < 250 < 250 < 300 < 700 < 750 < 750 MIN. -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 -3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 MAX. -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 0.5 0.5 10 10 10 10 10 10 10 12 12 12 12 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE MIN. AZ23B2V7-V-G AZ23B3V0-V-G AZ23B3V3-V-G AZ23B3V6-V-G AZ23B3V9-V-G AZ23B4V3-V-G AZ23B4V7-V-G AZ23B5V1-V-G AZ23B5V6-V-G AZ23B6V2-V-G AZ23B6V8-V-G AZ23B7V5-V-G AZ23B8V2-V-G AZ23B9V1-V-G AZ23B10-V-G AZ23B11-V-G AZ23B12-V-G AZ23B13-V-G AZ23B15-V-G AZ23B16-V-G AZ23B18-V-G AZ23B20-V-G AZ23B22-V-G AZ23B24-V-G AZ23B27-V-G AZ23B30-V-G AZ23B33-V-G AZ23B36-V-G AZ23B39-V-G AZ23B43-V-G AZ23B47-V-G AZ23B51-V-G D41 D42 D43 D44 D45 D46 D47 D48 D49 D50 D51 D52 D53 D54 D55 D56 D57 D58 D59 D60 D61 D62 D63 D64 D65 D66 D67 D68 D69 D70 D71 D72 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5 5.49 6.08 6.66 7.35 8.04 8.92 9.8 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50 VZ at IZT1 V NOM. 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 MAX. 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.2 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 TEST CURRENT IZT1 mA IZT2 REVERSE VOLTAGE VR at IR V MAX. > 0.8 >1 >2 >3 >5 >6 >7 > 7.5 > 8.5 >9 > 10 > 11 > 12 > 14 > 15 > 17 > 18 > 20 > 22.5 > 25 > 27 > 29 > 32 > 35 > 38 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 nA MAX. 75 (< 83) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 70 (< 78) 30 (< 60) 10 (< 40) 4.8 (< 10) 4.5 (< 8) 4 (< 7) 4.5 (< 7) 4.8 (< 10) 5.2 (< 15) 6 (< 20) 7 (< 20) 9 (< 25) 11 (< 30) 13 (< 40) 18 (< 50) 20 (< 50) 25 (< 55) 28 (< 80) 30 (< 80) 35 (< 80) 40 (< 80) 40 (< 90) 50 (< 90) 60 (< 100) 70 (< 100) 70 (< 100) DYNAMIC RESISTANCE ZZ at IZT1 ZZK at IZT2  Note (1) Tested with pulses t = 5 ms p Rev. 1.2, 31-Aug-11 Document Number: 85867 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-G-Series www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mA 103 102 Ω 103 5 4 3 2 Vishay Semiconductors Rzth = RthA x VZ x Δ VZ ΔTj IF 10 1 10-1 10-2 10-3 10-4 10 -5 TJ = 100 °C Rzth 102 TJ = 25 °C 5 4 3 2 10 5 4 3 2 negative positive 1 0.2 0.4 0.6 0.8 1V 1 18121 2 3 45 0 18114 10 2 345 100 V VF Fig. 1 - Forward Characteristics VZ at IZ = 5 mA Fig. 4 - Thermal Differential Resistance vs. Zener Voltage Ω 100 7 5 4 mW 500 400 Ptot 300 Rzj 3 2 10 200 7 5 4 100 3 2 0 0 18115 1 100 200 °C 1 18122 2 3 45 Tj = 25 °C IZ = 5 mA 10 2 345 100 V Tamb VZ Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 5 - Dynamic Resistance vs. Zener Voltage mV/°C 25 20 15 10 5 0 -5 5 mA IZ = 1 mA 20 mA Ω 103 7 5 4 Tj = 25 °C Rzj 3 2 47 + 51 43 39 36 Δ VZ ΔTj 102 7 5 4 3 2 10 0.1 18120 2 3 45 1 2 345 IZ 10 mA 1 18123 2 3 45 10 2 345 100 V VZ Fig. 3 - Dynamic Resistance vs. Zener Current Fig. 6 - Temperature Dependence of Zener Voltage vs. Zener Voltage Rev. 1.2, 31-Aug-11 Document Number: 85867 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-G-Series www.vishay.com Vishay Semiconductors V 1.6 15 10 V 0.8 0.7 0.6 VZ at IZ = 5 mA 25 1.4 1.2 ΔVZ = Rzth x IZ Δ VZ 0.5 0.4 0.3 0.2 0.1 0 -1 - 0.2 0 18124 3.6 4.7 8 7 6.2 5.9 5.6 5.1 Δ VZ 1 0.8 0.6 0.4 0.2 0 - 0.2 - 0.4 20 40 60 80 100 120 140 C 18127 1 2 3 45 10 2 345 100 V Tj VZ at IZ = 5 mA Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Fig. 7 - Change of Zener Voltage vs. Junction Temperature mV/°C 100 IZ = 5 mA V 5 ΔVZ = Rzth x IZ Δ VZ ΔTj 80 4 Δ VZ 60 3 IZ = 5 mA 40 2 20 1 IZ = 2 mA 0 0 18125 0 20 40 60 80 100 V 0 18128 20 40 60 80 100 V VZ VZ Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 50 V 9 8 7 Tj = 25 °C 2.7 3.9 5.6 3.3 4.7 6.8 8.2 40 51 43 36 Δ VZ 6 5 4 3 2 1 0 -1 0 18126 lZ 30 20 Test current IZ 5 mA 10 IZ = 2 mA 20 40 60 80 100 120 Tj 140 °C 0 0 18111 1 2 3 4 5 6 VZ 7 8 9 10 V Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 12 - Breakdown Characteristics Rev. 1.2, 31-Aug-11 Document Number: 85867 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-G-Series www.vishay.com Vishay Semiconductors mA 10 Tj = 25 °C 8 lZ Test current IZ 5 mA 39 43 51 47 mA 30 10 12 Tj = 25 °C lZ 20 15 18 22 6 Test 10 current IZ 5 mA 27 33 36 4 2 0 0 0 18112 10 20 VZ 30 40 V 18113 0 10 20 30 40 50 60 70 80 90 100 V VZ Fig. 13 - Breakdown Characteristics Fig. 14 - Breakdown Characteristics LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 1.2, 31-Aug-11 Document Number: 85867 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-G-Series www.vishay.com PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0.1 (0.004) max. 0.9 (0.035) 0.9 (0.035) Vishay Semiconductors 0.550 ref. (0.022 ref.) 0.175 (0.007) 0.098 (0.004) 3.1 (0.122) 2.8 (0.110) 0.2 (0.008) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) 0.45 (0.018) 1.43 (0.056) 0.35 (0.014) 1.20 (0.047) Foot print recommendation: 0.7 (0.028) 1 (0.039) 0.9 (0.035) 1 (0.039) 0.9 (0.035) 2 (0.079) 0.95 (0.037) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.2, 31-Aug-11 Document Number: 85867 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 0° t 0.5 (0.020) o8 ° Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000