PB5008

New Product PB5006 thru PB5010 Vishay General Semiconductor Enhanced PowerBridge® Rectifiers PowerBridge® FEATURES • UL recognition file number E312394 (QQQX2) UL 1557 (see *) • Enhanced high-current density single in-line package • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: PB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) ~ + ~ ~ ~ + Case Style PB + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 22.5 A TJ max. 45 A 600 V, 800 V, 1000 V 450 A 10 µA 0.90 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range Notes (1) With heatsink (2) Without heatsink, free air TC = 84 °C (1) TA = 25 °C (2) SYMBOL VRRM IO IFSM I2 t TJ, TSTG PB5006 600 PB5008 800 45 4.5 450 840 - 55 to + 150 PB5010 1000 UNIT V A A A 2s °C Document Number: 84809 Revision: 15-Mar-11 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product PB5006 thru PB5010 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Reverse current per diode (2) Typical junction capacitance per diode TEST CONDITIONS IF = 22.5 A rated VR 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF IR CJ TYP. 1.00 0.90 170 162 MAX. 1.10 1.00 10 500 UNIT V µA pF Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: 10 ms pulse width THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Notes With heatsink (2) Without heatsink, free air (1) SYMBOL RJC (1) RJA (2) PB5006 PB5008 0.7 18 PB5010 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N PB5006-E3/45 UNIT WEIGHT (g) 7.62 PREFERRED PACKAGE CODE 45 BASE QUANTITY 20 DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 TC Measurement With Heatsink Sine-Wave, R-Load 5 Average Forward Rectified Current (A) Average Forward Output Current (A) 4 3 2 Without Heatsink Sine-Wave, R-Load Free Air, TA 1 0 0 25 50 75 100 125 150 Case Temperature (°C) Ambient Temperature (°C) Figure 1. Derating Curve Output Rectified Current Figure 2. Forward Current Derating Curve www.vishay.com 2 Document Number: 84809 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product PB5006 thru PB5010 Vishay General Semiconductor 120 1000 Instantaneous Reverse Current (µA) TA = 150 °C TA = 125 °C Forward Power Dissipation (W) 100 100 TA = 100 °C 10 TA = 85 °C 80 60 1 40 20 0.1 TA = 25 °C 0 0 5 10 15 20 25 30 35 40 45 50 55 0.01 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Figure 3. Forward Power Dissipation Figure 5. Typical Reverse Characteristics Per Diode 100 1000 TA = 150 °C TA = 125 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 TA = 100 °C TA = 25 °C 1 TA = 85 °C Junction Capacitance (pF) 1.1 1.2 100 0.1 0.4 10 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode Document Number: 84809 Revision: 15-Mar-11 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product PB5006 thru PB5010 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type PB Front Side View 0.118 (3.0) x 45° CHAMFER 1.193 (30.3) 1.169 (29.7) 0.201 (5.1) 0.177 (4.5) Side View 0.161 (4.1) 0.138 (3.5) 0.441 (11.2) 0.425 (10.8) 0.106 (2.70) 0.091 (2.30) 0.094 (2.40) 0.079 (2.00) 0.799 (20.3) 0.776 (19.7) 0.205 (5.20) 0.189 (4.80) 0.165 (4.20) 0.150 (3.80) 0.708 (18.0) 0.669 (17.0) 0.145 (3.7) 0.130 (3.3) 120° TYP. 5° TYP. 0.134 (3.4) 0.118 (3.0) 5° TYP. 0.118 (3.0) 0.102 (2.6) 0.043 (1.10) 0.035 (0.90) 0.402 (10.2) 0.386 (9.80) 0.303 (7.70) 0.287 (7.30) 0.303 (7.70) 0.287 (7.30) 0.032 (0.80) 0.024 (0.60) Back Side View 1.041 (26.44) REF. 0.088 (2.24) REF. 0.070 (1.78) REF. 0.633 (16.07) REF. 0.066 (1.68) REF. 0.214 (5.44) REF. www.vishay.com 4 Document Number: 84809 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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