2N/PN/SST4117A Series
Vishay Siliconix
N-Channel JFETs
2N4117A 2N4118A 2N4119A
PRODUCT SUMMARY
Part Number
4117 4118 4119
PN4117A SST4117 PN4118A SST4118 PN4119A SST4119
VGS(off) (V)
−0.6 to −1.8 −1 to −3 −2 to −6
V(BR)GSS Min (V)
−40 −40 −40
gfs Min (mS)
70 80 100
IDSS Min (mA)
30 80 200
FEATURES
D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise
BENEFITS
D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noise D High Sensitivity to Low-Level Signals
APPLICATIONS
D High-Impedance Transducer Amplifiers D Smoke Detector Input D Infrared Detector Amplifier D Precision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information).
TO-206AF (TO-72)
S 1 4 S C D
TO-226AA (TO-92)
TO-236 (SOT-23)
1 D 2 S 2 1 3 G
2 D Top View 2N4117A 2N4118A 2N4119A
3 G
G
3 Top View PN4117A PN4118A PN4119A Top View SST4117 (T7)* SST4118 (T8)* SST4119 (T9)* *Marking Code for TO-236
For applications information see AN105. Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com
1
2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipation (case 25_C) : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C
Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4117 4118 4119
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS
IG = −1 mA , VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = −20 V VDS = 0 V VGS = −20 V VDS = 0 V TA = 150_C VGS = −10 V VDS = 0 V VGS = −10 V VDS = 0 V TA = 100_C 2N
−70
−40 −0.6 30 −1.8 90 −1 −2.5 −1 −10 −2.5
−40 −1 80 −3 240 −1 −2.5 −1 −10 −2.5
−40 −2 200 −6 600 −1 −2.5 −1 −10 −2.5
V mA pA nA
−0.2 −0.4 PN SST PN/SST −0.2 −0.2 −0.03 −0.2 0.2 0.7
Gate R G t Reverse Current C t
IGSS
pA nA
Gate Operating Currentb Drain Cutoff Currentb Gate-Source Forward Voltageb
IG ID(off) VGS(F)
VDG = 15 V, ID = 30 mA VDS = 10 V, VGS = −8 V IG = 1 mA , VDS = 0 V
pA V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltageb gfs gos Ciiss Crss en VDS = 10 V, VGS = 0 V V, DS f = 1 kHz 2N/PN VDS = 10 V VGS = 0 V f = 1 MHz SST 2N/PN SST VDS = 10 V, VGS = 0 V f = 1 kHz 1.2 1.2 0.3 0.3 15 nV⁄ √Hz NT 1.5 1.5 1.5 70 210 3 3 80 250 5 3 100 330 10 3 pF mS
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. This parameter not registered with JEDEC.
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2
Document Number: 70239 S-41231—Rev. G, 28-Jun-04
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz
1000 IDSS − Saturation Drain Current (µA)
300 gfs − Forward Transconductance (µS)
1 nA
Gate Leakage Current
VGS(off) = −2.5 V 100 mA
800
240
100 pA IG − Gate Leakage TA = 125_C
10 mA
IGSS @ 125_C 100 mA 10 mA
600 gfs 400 IDSS 200
180
10 pA
120
60
1 pA TA = 25_C 0.1 pA 0 6
IGSS @ 25_C
0 0 −2 −3 −4 VGS(off) − Gate-Source Cutoff Voltage (V) −1 −5
0
12 18 24 VDG − Drain-Gate Voltage (V)
30
15 rDS(on) − Drain-Source On-Resistance (kW)
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
gos
5
200
Common-Source Forward Transconductance vs. Drain Current
VGS(off) = −2.5 V
gfs − Forward Transconductance (µS)
gos − Output Conductance (µS)
12
rDS
4
160 TA = −55_C 120 125_C 80 25_C
9
3
6
2
3
rDS @ ID = 10 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz
1
40
VDS = 10 V f = 1 kHz 0.01 0.1 ID − Drain Current (mA) 1
0 0 −1 −2 −3 −4 −5 VGS(off) − Gate-Source Cutoff Voltage (V)
0
0
Output Characteristics
100 VGS(off) = −0.7 V 80 ID − Drain Current (µA) VGS = 0 V −0.1 V −0.2 V 40 −0.3 V −0.4 V 20 −0.5 V ID − Drain Current (µA) 400 500
Output Characteristics
VGS(off) = −2.5 V
VGS = 0 V 300 −0.5 V 200 −1.0 V 100 −1.5 V −2.0 V
60
0 0 4 8 12 16 20 VDS − Drain-Source Voltage (V) Document Number: 70239 S-41231—Rev. G, 28-Jun-04
0 0 4 8 12 16 20 VDS − Drain-Source Voltage (V) www.vishay.com
3
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
100
Transfer Characteristics
VGS(off) = −0.7 V VDS = 10 V gfs − Forward Transconductance (µS)
200
Transconductance vs. Gate-Source Voltage
VGS(off) = −0.7 V VDS = 10 V f = 1 kHz
80 ID − Drain Current (µA)
160
TA = −55_C 25_C
60 TA = 125_C 40 25_C
120
80
125_C
20 −55_C 0 0 −0.2 −0.4 −0.8 −0.6 VGS − Gate-Source Voltage (V) −1.0
40
0 0 −0.2 −0.4 −0.6 −0.8 VGS − Gate-Source Voltage (V) −1.0
500
Transfer Characteristics
VGS(off) = −2.5 V VDS = 10 V
300 gfs − Forward Transconductance (µS)
Transconductance vs. Gate-Source Voltage
VGS(off) = −2.5 V VDS = 10 V f = 1 kHz
400 ID − Drain Current (µA) TA = −55_C 25_C
240 TA = −55_C 180 25_C
300
200
120 125_C 60
100
125_C
0 0 −1 −2 −3 −4 −5 VGS − Gate-Source Voltage (V)
0 0 −1 −2 −3 −4 −5 VGS − Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100 AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID g fs R L 2.0
Common-Source Input Capacitance vs. Gate-Source Voltage
f = 1 MHz 1.6 Ciss − Input Capacitance (pF)
80 AV − Voltage Gain
1.2
VDS = 0 V 10 V
40
VGS(off) = −0.7 V
0.8
20
−2.5 V
0.4
0 0.01 0.1 ID − Drain Current (mA) 1
0 0 −4 −8 −12 −16 −20 VGS − Gate-Source Voltage (V) Document Number: 70239 S-41231—Rev. G, 28-Jun-04
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2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
f = 1 MHz Crss − Reverse Feedback Capacitance (pF) 0.4 Hz 160
0.5
200
Equivalent Input Noise Voltage vs. Frequency
VDS = 10 V
en − Noise Voltage nV /
0.3
VDS = 0 V
120
ID = 10 mA
0.2
10 V
80 VGS = 0 V
0.1
40
0 0 −4 −8 −12 −16 −20 VGS − Gate-Source Voltage (V)
0 10 100 1k f − Frequency (Hz) 10 k
100 k
2
Output Conductance vs. Drain Current
20 rDS(on) − Drain-Source On-Resistance ( Ω ) VGS(off) = −2.5 V
On-Resistance vs. Drain Current
VGS(off) = −0.7 V
gos − Output Conductance (µS)
TA = −55_C
16
1 125_C
25_C
12
8 −2.5 V 4 TA = 25_C 0 0.01 0.1 ID − Drain Current (mA) 1
VDS = 10 V f = 1 kHz
0 0.01 0.1 ID − Drain Current (mA) 1
Document Number: 70239 S-41231—Rev. G, 28-Jun-04
www.vishay.com
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