RG4B

VISHAY RG4A to RG4J Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway • Hermetically sealed package Mechanical Data Case: Sintered glass case, G4 Terminals: Solder plated axial leads, solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 1040 mg 17133 Parts Table Part RG4A RG4B RG4D RG4G RG4J VRRM = 50 V VRRM = 100 V VRRM = 200 V VRRM = 400 V VRRM = 600 V Type differentiation G4 G4 G4 G4 G4 Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Maximum average forward rectified current Peak forward surge current Maximum average reverse current Operating junction and storage temperature range 0.375 " (9.5 mm) lead length at Tamb = 55 °C 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) at rated peak reverse voltage Tamb = 25 °C at rated peak reverse voltage Tamb = 100 °C Part RG4A RG4B RG4D RG4J RG1J Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IF(AV) IFSM IR(AV) IR(AV) TJ, TSTG Value 50 100 200 400 600 3.0 100 2.0 100 - 55 to + 175 Unit V V V V V A A µA µA °C Document Number 86076 Rev. 2, 28-Jan-03 www.vishay.com 1 RG4A to RG4J Vishay Semiconductors VISHAY Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Typical thermal resistance 1) 1) Symbol RθJA Value 22 Unit K/W Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, with both leads attached to heat sink Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Maximum instantaneous forward voltage Maximum reverse current Maximum reverse recovery time IF = 3.0 A VR = VRRM IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance VR = 4.0 V, f = 1 MHz RG4A RG4B RG4D RG4G RG4J Test condition Part Symbol VF IR trr trr trr trr trr CJ 50 Typ. Max 1.3 5.0 150 150 150 150 250 Unit V µA ns ns ns ns ns pF Typical Characteristics (Tamb = 25 °C unless otherwise specified) Average Forward Rectified Current (A) 4.0 Resistive or Inductive Load 200 TA = 55°C 8.3ms Single Half Sine-Wave (JEDEC Method) Peak Forward Surge Current (A) 0.375" (9.5mm) Lead Length 0 25 50 75 100 125 150 175 3.0 100 2.0 1.0 0 grg4a_01 10 1 grg4a_02 10 100 Ambient Temperature (°C) Number of Cycles at 60 HZ Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 Document Number 86076 Rev. 2, 28-Jan-03 VISHAY RG4A to RG4J Vishay Semiconductors 20 Instantaneous Forward Current (A) 10 1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 0.1 0.01 0.4 grg4a_03 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 10 Instantaneous Reverse Current (µA) TJ = 125°C 1 TJ = 75°C 0.1 TJ = 25°C 0.01 0 20 40 60 80 100 grg4a_04 Percent of Rated Peak Reverse Voltage (V) Figure 4. Typical Reverse Characteristics 100 Junction Capacitance (pF) TJ = 25°C f = 1.0 MHZ Vsig, 50mVp-p 50 10 1 grg4a_05 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number 86076 Rev. 2, 28-Jan-03 www.vishay.com 3 RG4A to RG4J Vishay Semiconductors Package Dimensions in Inches (mm) VISHAY 0.180 (4.6) 0.115 (2.9) DIA. 1.0 (25.4) MIN. 0.300 (7.6) MAX. 0.042 (1.07) 0.038 (0.962) DIA. 17032 1.0 (25.4) MIN. www.vishay.com 4 Document Number 86076 Rev. 2, 28-Jan-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to RG4A to RG4J Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86076 Rev. 2, 28-Jan-03 www.vishay.com 5 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.