RGF1J

RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER® • Ideal for automated placement • Fast switching for high efficiency • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 DO-214BA (GF1) • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1.0 A PPRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF trr TJ max. 50 V to 1000 V 30 A 1.3 V 150 ns, 250 ns, 500 ns 175 °C MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 120 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Maximum full load reverse current, full cycle average TA = 55 °C Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM IR(AV) TJ, TSTG SYMBOL RGF1A RA 50 35 50 RGF1B RB 100 70 100 RGF1D RD 200 140 200 RGF1G RG 400 280 400 1.0 30 50 - 65 to + 175 RGF1J RJ 600 420 600 RGF1K RGF1M RK 800 560 800 RM 1000 700 1000 V V V A A μA °C UNIT Document Number: 88697 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RGF1A thru RGF1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance TEST CONDITIONS 1.0 A TA = 25 °C IR TA = 125 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz trr CJ 150 8.5 100 250 500 ns pF SYMBOL VF RGF1A RGF1B RGF1D RGF1G 1.3 5.0 μA RGF1J RGF1K RGF1M UNIT V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA RJL (1) (1) RGF1A RGF1B RGF1D RGF1G 80 RGF1J RGF1K RGF1M UNIT °C/W 28 Note (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N RGF1J-E3/67A RGF1J-E3/5CA RGF1JHE3/67A (1) UNIT WEIGHT (g) 0.104 0.104 0.104 0.104 PREFERRED PACKAGE CODE 67A 5CA 67A 5CA BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel RGF1JHE3/5CA (1) (1) Note AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.25 30 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas Average Forward Rectified Current (A) Peak Forward Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave 25 1.00 20 0.75 15 0.50 10 0.25 60 Hz Resistive or Inductive Load 120 140 160 180 5 0 100 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current For technical questions within your region, please contact one of the following: Document Number: 88697 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 RGF1A thru RGF1M Vishay General Semiconductor 10 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 1 Junction Capacitance (pF) 1.6 0.1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 10 0.01 0.4 1 0.6 0.8 1.0 1.2 1.4 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 TJ = 125 °C 100 1 TJ = 100 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 0.1 TJ = 25 °C 1 Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.1 0.01 0.1 1 10 100 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214BA (GF1) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.076 (1.93) MAX. 0.066 (1.68) 0.040 (1.02) 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 (1.52) MIN. 0.118 (3.00) 0.100 (2.54) 0.108 (2.74) 0.098 (2.49) 0.220 (5.58) REF. 0.060 (1.52) 0.030 (0.76) 0.006 (0.152) TYP. 0.226 (5.74) 0.196 (4.98) 0.114 (2.90) 0.094 (2.39) Document Number: 88697 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. 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