RGP02-16E

RGP02-12E THRU RGP02-20E Vishay Semiconductors formerly General Semiconductor Case Style GP10E Glass Passivated Junction Fast Switching Rectifier Features Reverse Voltage 1200 to 2000V Forward Current 0.5A * ted n ate P 0.107 (2.7) 0.080 (2.0) DIA. 1.0 (25.4) MIN. 0.205 (5.2) 0.160 (4.1) ® 1.0 (25.4) MIN. 0.026 (0.66) 0.023 (0.58) DIA. • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Capable of meeting environmental standards of MIL-S-19500 • For use in high frequency rectifier circuits • Fast switching for high efficiency • Cavity-free glass passivated junction • 0.5 Ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.2µA • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Mechanical Data Case: Molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g Ratings at 25°C ambient temperature unless otherwise specified. *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM RΘJA RΘJL TJ, TSTG 1200 840 1200 RGP02 RGP02 RGP02 RGP02 RGP02 RGP02 Symbols -12E -14E -16E -17E -18E -20E 1400 980 1400 1600 1120 1600 1700 1190 1700 0.5 20 65 30 -65 to +175 1800 1260 1800 2000 1400 2000 Units V V V A A °C/W °C Electrical Characteristics Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz Ratings at 25°C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage at 0.1A TA=25°C TA=125°C VF IR trr CJ 1.8 5.0 50 300 5.0 V µA ns pF Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted Document Number 88699 08-Apr-04 www.vishay.com 1 RGP02-12E THRU RGP02-20E Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 — Forward Current Derating Curve Average Forward Rectified Current (A) 0.5 Resistive or Inductive Load 0.4 25 Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 20 0.3 15 0.2 10 0.1 0.375" (9.5mm) Lead Length 0 25 5 0 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 HZ Fig. 3 — Typical Instantaneous Forward Characteristics 1 20 Fig. 4 — Typical Reverse Characteristics Instantaneous Reverse Current (µA) 10 TJ = 125°C Instantaneous Forward Current (A) 0.1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 1 TJ = 75°C 0.1 TJ = 25°C 0.01 0.001 0.8 0.01 1.0 1.2 1.4 1.6 1.8 2 2.2 2.4 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 — Typical Junction Capacitance 10 TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p Junction Capacitance (pF) 1 1 10 100 Reverse Voltage (V) www.vishay.com 2 Document Number 88699 08-Apr-04