RGP02

RGP02-12E THRU RGP02-20E Vishay Semiconductors formerly General Semiconductor Case Style GP10E Glass Passivated Junction Fast Switching Rectifier Features Reverse Voltage 1200 to 2000V Forward Current 0.5A ted* aten P 0.107 (2.7) 0.080 (2.0) DIA. ® 1.0 (25.4) MIN. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.026 (0.66) 0.023 (0.58) DIA. • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Capable of meeting environmental standards of MIL-S-19500 • For use in high frequency rectifier circuits • Fast switching for high efficiency • Cavity-free glass passivated junction • 0.5 Ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.2µA • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Mechanical Data Case: Molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g Ratings at 25°C ambient temperature unless otherwise specified. Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) Operating junction and storage temperature range Symbols VRRM VRMS VDC IF(AV) IFSM RΘJA RΘJL TJ, TSTG RGP02 -12E 1200 840 1200 RGP02 -14E 1400 980 1400 RGP02 -16E 1600 1120 1600 0.5 20 65 30 -65 to +175 RGP02 -18E 1800 1260 1800 RGP02 -20E 2000 1400 2000 Units V V V A A °C/W °C Electrical Characteristics Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz Ratings at 25°C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage at 0.1A TA=25°C TA=125°C VF IR trr CJ 1.8 5.0 50 300 5.0 V µA ns pF Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted Document Number 88699 16-Jan-03 www.vishay.com 1 RGP02-12E THRU RGP02-20E Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 — Forward Current Derating Curve Average Forward Rectified Current (A) 0.5 Resistive or Inductive Load 0.4 25 Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 20 0.3 15 0.2 10 0.1 0.375" (9.5mm) Lead Length 0 25 5 0 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 HZ Fig. 3 — Typical Instantaneous Forward Characteristics 1 20 Fig. 4 — Typical Reverse Characteristics Instantaneous Reverse Current (µA) 10 TJ = 125°C Instantaneous Forward Current (A) 0.1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 1 TJ = 75°C 0.1 TJ = 25°C 0.01 0.001 0.8 0.01 1.0 1.2 1.4 1.6 1.8 2 2.2 2.4 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 — Typical Junction Capacitance 10 TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p Junction Capacitance (pF) 1 1 10 100 Reverse Voltage (V) www.vishay.com 2 Document Number 88699 16-Jan-03