New Product
RS1PB thru RS1PJ
Vishay General Semiconductor
High Current Density Surface Mount Glass Passivated Fast Switching Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
®
eSMP Series
• Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency • Low thermal resistance • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
DO-220AA (SMP)
• AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM trr IR TJ max. 1.0 A 100 V, 200 V, 400 V, 600 V 30 A 150 ns, 250 ns 1 μA 150 °C
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VRRM IF(AV) IFSM TJ, TSTG SYMBOL RS1PB RB 100 RS1PD RD 200 1.0 30 - 55 to + 150 RS1PG RG 400 RS1PJ RJ 600 V A A °C UNIT
Document Number: 88934 Revision: 19-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
RS1PB thru RS1PJ
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage Maximum reverse current at rated VR voltage Maximum reverse recovery time Typical junction capacitance TEST CONDITIONS IF = 1.0 A TA = 25 °C TA = 125 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz SYMBOL VF (1) IR (2) trr CJ 150 9 RS1PB RS1PD 1.3 1.0 μA 60 250 ns pF RS1PG RS1PJ UNIT V
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RJA (1) Typical thermal resistance RJL (1) RJC
(1)
RS1PB
RS1PD 115 15 20
RS1PG
RS1PJ
UNIT
°C/W
Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R JL is measured at the terminal of cathode band. RJC is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/N RS1PB-M3/84A RS1PB-M3/85A RS1PBHM3/84A RS1PBHM3/85A
(1) (1)
UNIT WEIGHT (g) 0.024 0.024 0.024 0.024
PREFERRED PACKAGE CODE 84A 85A 84A 85A
BASE QUANTITY 3000 10 000 3000 10 000
DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel
Note (1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
1.2
30
Average Forward Rectified Current (A)
Peak Forward Current (A)
130 140 150
1.0
25
0.8
20
0.6
15
0.4 TL Measured at the Cathode Band Terminal
10
0.2
5
0.0 80 90 100 110 120
0 1 10 100
Lead Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Maximum Forward Current Derating Curve www.vishay.com 2
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
For technical questions within your region, please contact one of the following: Document Number: 88934 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
RS1PB thru RS1PJ
Vishay General Semiconductor
100
100 Pulse Width = 300 μs 1 % Duty Cycle TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
Instantaneous Forward Current (A)
10
TJ = 150 °C TJ = 125 °C
Junction Capacitance (pF)
1.6 1.8 2.0
1
10
0.1
TJ = 25 °C
0.01 0.4
0.6
0.8
1.0
1.2
1.4
1 0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000 TJ = 150 °C TJ = 125 °C 10
1000
100
Transient Thermal Impedance (°C/W)
70 80 90 100
Instantaneous Reverse Current (μA)
100
1
10
0.1
TJ = 25 °C
0.01 10 20 30 40 50 60
1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
Cathode Band 0.012 (0.30) REF.
0.086 (2.18) 0.074 (1.88)
0.053 (1.35) 0.041 (1.05)
0.036 (0.91) 0.024 (0.61)
0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70)
0.103 (2.60) 0.087 (2.20)
0.032 (0.80) 0.016 (0.40)
0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54)
0.025 0.030 (0.635) (0.762)
0.050 (1.27)
Document Number: 88934 Revision: 19-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000 Revision: 11-Mar-11
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