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S07D-GS18

S07D-GS18

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    S07D-GS18 - Small Signal Fast Switching Diode, High Voltage - Vishay Siliconix

  • 数据手册
  • 价格&库存
S07D-GS18 数据手册
S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage Features For surface mounted applications Low profile package e3 Ideal for automated placement Glass passivated High temperature soldering: 260 °C/ 10 seconds at terminals • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • • • • • 17249 Mechanical Data Case: JEDEC DO-219AB (SMF®) Plastic case Polarity: Band denotes cathode end Weight: approx. 15 mg Packaging codes-options: GS18 / 10 k per 13" reel (8 mm tape), 50 k/box GS08 / 3 k per 7" reel (8 mm tape), 30 k/box Parts Table Part S07B S07D S07G S07J S07M Ordering code S07B-GS18 or S07B-GS08 S07D-GS18 or S07D-GS08 S07G-GS18 or S07G-GS08 S07J-GS18 or S07J-GS08 S07M-GS18 or S07M-GS08 SB SD SG SJ SM Marking Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Document Number 85733 Rev. 1.8, 13-Apr-05 www.vishay.com 1 S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Maximum repetitive peak reverse voltage Test condition Part S07B S07D S07G S07J S07M Maximum RMS voltage S07B S07D S07G S07J S07M Maximum DC blocking voltage S07B S07D S07G S07J S07M Maximum average forward rectified current T = 75 °C1) tp TA = 65 °C1) Peak forward surge current 8.3 ms single half sine-wave 1) Symbol VRRM VRRM VRRM VRRM VRRM VRMS VRMS VRMS VRMS VRMS VDC VDC VDC VDC VDC IF(AV) IF(AV) IFSM Value 100 200 400 600 1000 70 140 280 420 700 100 200 400 600 1000 1.5 0.7 25 Unit V V V V V V V V V V V V V V V A A A TL = 25 °C Averaged over any 20 ms period Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air2) Operating junction and storage temperature range 2) Test condition Symbol RthJA TJ, TSTG Value 180 - 55 to + 150 Unit K/W °C Mounted on epoxy substrate with 3 x 3 mm CU pads (≥ 40 µm thick) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Maximum instantaneous forward voltage 1.0 A3) Test condition Symbol VF IR IR trr Cj 4 Min Typ. Max 1.1 10 50 1.8 Unit V µA µA µs pF Maximum DC reverse current at TA = 25 °C rated DC blocking voltage TA = 125 °C Reverse recovery time Typical capacitance at 4 V, MHz 3) IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Pulse test: 300 µ pulse width, 1 % duty cycle www.vishay.com 2 Document Number 85733 Rev. 1.8, 13-Apr-05 S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.2 Resistive or Inductive Load 100 Instantaneous Reverse Current (µA) Average Forward Current (A) 1.0 TJ = 150°C 10 TJ = 125°C TJ = 100°C 1 TJ = 75°C TJ = 50°C 0.8 0.6 0.4 0.1 0.2 0 3.0 x 3.0mm 40 µm Thick Copper Pad Areas 0 20 40 60 80 100 120 140 160 TJ = 25°C 0.01 0 100 200 300 400 500 600 700 800 900 17375 Ambient Temperature (jC) 17377 Instantaneous Reverse Voltage (V) Figure 1. Forward Current Derating Curve Figure 3. Typical Instantaneous Reverse Characteristics 1000 10 9 8 TJ = 150°C TJ = 25°C 7 Instantaneous Forward Current (mA) C (pF) TJ = 100°C 100 600 6 5 4 3 2 1 0 700 800 900 1000 1100 0 5 10 15 20 25 30 35 40 17376 Instantaneous Forward Voltage (mV) 17378 VR (V) Figure 2. Typical Instantaneous Forward Characteristics Figure 4. Capacitance vs. Reverse Voltage Document Number 85733 Rev. 1.8, 13-Apr-05 www.vishay.com 3 S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Package Dimensions in mm (Inches) 0.85 (0.033) 0.35 (0.014) 3.9 (0.152) 3.5 (0.137) 5 0.99 (0.039) 0.97 (0.038) 0.16 (0.006) 5 Z Detail Z enlarged Cathode Band Top View 1.9 (0.074) 1.7 (0.066) 0.10 max 1.2 (0.047) 0.8 (0.031) 2.9 (0.113) 2.7 (0.105) ISO Method E Mounting Pad Layout 1.6 (0.062) 1.3 (0.051) 1.4 (0.055) 17247 www.vishay.com 4 Document Number 85733 Rev. 1.8, 13-Apr-05 S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Blistertape for SMF PS 18513 Document Number 85733 Rev. 1.8, 13-Apr-05 www.vishay.com 5 S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85733 Rev. 1.8, 13-Apr-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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