S330D
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg
APPLICATIONS
• High voltage • Power supplies
PARTS TABLE
PART S330D TYPE DIFFERENTIATION VR = 1000 V; IFAV = 2 A PACKAGE SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Pulse energy in avalanche mode, non repetitive (inductive load switch off) Junction and storage temperature range TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave Tamb = 50 °C, I = 10 mm I(BR)R = 1 A, inductive load PART S330D SYMBOL VR = VRRM IFSM IFAV ER Tj = Tstg VALUE 1000 50 2 20 - 55 to + 175 UNIT V A A mJ °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant SYMBOL RthJA VALUE 45 UNIT K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Reverse current Breakdown voltage Reverse recovery time TEST CONDITION IF = 1 A I F = 10 A VR = VRRM VR = VRRM, Tj = 100 °C IR = 100 μA IF = 0.5 A, IR = 1 A, iR = 0.25 A PART SYMBOL VF VF IR IR V(BR)R trr MIN. 1300 TYP. MAX 1 1.65 5 50 4 UNIT V V μA μA V μs
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86053 Rev. 1.6, 25-Aug-10
S330D
Standard Avalanche Sinterglass Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
RthJA - Thermal Resist. Junction/Ambeint (K/W) 120 100 80 60 l 40 20 5 0 0 5 10 15 T L = constant 20 25 30
17214
Vishay Semiconductors
40 35 30 CD (pF) l 15 10 25 20
0 0.1
1 VR (V)
10
100
949090
I - Lead Length (mm)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 4 - Diode Capacitance vs. Reverse Voltage
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
17212
100
IFAV - Average Forward Current (A)
10 RthJA = 45 K/W I = 10 mm IF (A)
TJT= 175 °C
1
TJ = 25 °C
0.1
0.01
0.001 20 40 60 80 100 120 140 160 180
17215
0.0
0.5
1.0
Tamb - Ambient Temperature (°C)
1.5 2.0 VF (A)
2.5
3.0
3.5 4.0
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
10 000
0.5 0.45
1000
0.4 0.35 0.3 PR (W) PR - Limit at 100 % VR
IR (μA)
100
0.25 0.2 0.15 0.1 PR - Limit at 80 % VR 25 50 75 100 T J (°C) 125 150 175
10
1 25
17213
0.05
50 75 100 Tj (°C) 125 150 175
17216
0
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature
Document Number: 86053 Rev. 1.6, 25-Aug-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com 169
S330D
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
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3.6 (0.142) max. 20543
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86053 Rev. 1.6, 25-Aug-10
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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