S350P

S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of unlimited size. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp > 850nm. Features D D D D D High radiant sensitivity Miniature T–¾ flat plastic package with IR filter Very wide angle of half sensitivity ϕ = ± 40° Suitable for near infrared radiation Suitable for 0.1” (2.54 mm) center–to–center spacing 94 8640 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 32 5 50 100 100 100 –55...+100 260 450 Unit V V mA mA mW °C °C °C K/W tp/T = 0.5, tp 10 ms Tamb 55 °C x x t x3s Document Number 81543 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (5) S350P Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Ee = 1 mW/cm2, l = 950 nm, VCE = 5 V Symbol V(BR)CE O Min 32 Typ Max Unit V nA pF mA deg nm nm V ICEO CCEO Ica ϕ lp l0.5 VCEsat ton toff fc 0.2 2 6 1 ±40 925 860...990 200 Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee = 1 mW/cm2, Voltage l = 950 nm, IC = 0.1 mA Turn–On Time VS = 5 V, IC = 5 mA, RL = 100 W Turn–Off Time VS = 5 V, IC = 5 mA, RL = 100 W Cut–Off Frequency VS = 5 V, IC = 5 mA, RL = 100 W 0.3 6 5 110 ms ms kHz Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 P tot – Total Power Dissipation ( mW ) 100 I CEO – Collector Dark Current ( nA ) 104 103 VCE=20V 102 75 RthJA 50 25 0 0 20 40 60 80 100 101 100 20 94 8260 40 60 80 100 94 8308 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) Document Number 81543 Rev. 2, 20-May-99 S350P Vishay Telefunken 2.0 I ca rel – Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 C CEO – Collector Emitter Capacitance ( pF ) 20 16 f=1MHz VCE=5V Ee=1mW/cm2 l=950nm 12 8 4 0 0.1 1 10 100 VCE – Collector Emitter Voltage ( V ) 20 40 60 80 100 94 8247 Tamb – Ambient Temperature ( °C ) Figure 3. Relative Collector Current vs. Ambient Temperature t on / t off – Turn on / Turn off Time ( m s ) 10 Ica – Collector Light Current ( mA ) Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage 12 10 8 6 4 2 0 ton VCE=5V RL=100W l=950nm 1 0.1 VCE=5V l=950nm 0.01 toff 0.001 0.01 94 8255 0.1 Ee – Irradiance ( 1 mW / cm2 ) 10 94 8253 0 4 8 12 16 IC – Collector Current ( mA ) Figure 4. Collector Light Current vs. Irradiance 10 Ica – Collector Light Current ( mA ) l=950nm Figure 7. Turn On/Turn Off Time vs. Collector Current S ( l ) rel – Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 700 Ee=1 mW/cm2 1 0.5 mW/cm2 0.2 mW/cm2 0.1 0.1 mW/cm2 0.01 0.1 94 8256 1 10 100 94 8261 800 VCE – Collector Emitter Voltage ( V ) l – Wavelength ( nm ) 900 1000 1100 Figure 5. Collector Light Current vs. Collector Emitter Voltage Figure 8. Relative Spectral Sensitivity vs. Wavelength Document Number 81543 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 3 (5) S350P Vishay Telefunken 0° 10 ° 20 ° 30° S rel – Relative Sensitivity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8257 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement Dimensions in mm 96 12188 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 81543 Rev. 2, 20-May-99 S350P Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81543 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)