SB320

SB320 thru SB360 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. 3.0 A 20 V to 60 V 120 A 0.49 V, 0.68 V 125 °C, 150 °C For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at 0.375" (9.5 mm) lead length (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction temperature range Storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ TSTG - 65 to + 125 - 65 to + 150 SB320 20 14 20 SB330 30 21 30 SB340 40 28 40 3.0 120 - 65 to + 150 SB350 50 35 50 SB360 60 42 60 UNIT V V V A A °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum instantaneous reverse current at rated DC blocking voltage TEST CONDITIONS SYMBOL 3.0 A TA = 25 °C TA = 100 °C VF (1) IR (1) SB320 SB330 0.49 0.5 mA 20 10 SB340 SB350 SB360 UNIT V 0.68 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Document Number: 88719 Revision: 19-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 SB320 thru SB360 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJA (1) RθJL (1) SB320 SB330 SB340 30 SB350 SB360 UNIT °C/W 10 Note (1) Thermal resistance from junction to lead vertical P.C.B. mounting, 0.500" (12.7 mm) lead length with 2.5" x 2.5" (63.5 mm x 63.5 mm) copper pad ORDERING INFORMATION (Example) PREFERRED P/N SB340-E3/54 SB340-E3/73 UNIT WEIGHT (g) 1.08 1.08 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 1400 1000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.0 100 Instantaneous Forward Current (A) Average Forward Current (A) Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 3.0 TJ = 125 °C 10 Pulse Width = 300 μs 1 % Duty Cycle 2.0 1 TJ = 25 °C 0.1 SB320 thru SB340 SB350 and SB360 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.0 SB320 thru SB340 SB350 and SB360 0 0 25 50 75 100 125 150 175 Lead Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 150 10 120 Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave 1 TJ = 125 °C 90 0.1 TJ = 25 °C 0.01 TJ = 75 °C 60 30 SB320 thru SB340 SB350 and SB360 0.001 0 20 40 60 80 100 0 1 10 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88719 Revision: 19-Oct-09 SB320 thru SB360 Vishay General Semiconductor 1000 100 Transient Thermal Impedance (°C/W) 100 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 100 1 SB320 thru SB340 SB350 and SB360 10 0.1 1 10 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88719 Revision: 19-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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