SBL10L30

SBL10L30

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SBL10L30 - Schottky Barrier Rectifier - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
SBL10L30 数据手册
SBL10L30, SBLF10L30 & SBLB10L30 New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 30V Forward Current 10A Schottky Barrier Rectifier ITO-220AC (SBLF10L30) 0.405 (10.27) 0.383 (9.72) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) PIN 1 0.160 (4.06) 0.140 (3.56) 2 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) CASE TO-220AC (SBL10L30) 0.415 (10.54) MAX. DIA. 0.140 (3.56) DIA. 0.130 (3.30) 0.131 (3.39) DIA. 0.122 (3.08) 0.055 (1.39) 0.045 (1.14) 0.600 (15.5) 0.580 (14.5) 0.676 (17.2) 0.646 (16.4) 0.350 (8.89) 0.330 (8.38) PIN 1 2 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.060 (1.52) PIN 1 PIN 2 0.110 (2.80) 0.100 (2.54) PIN 1 PIN 2 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.022 (0.55) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36) TO-263AB (SBLB10L30) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN K 0.055 (1.40) 0.047 (1.19) 1 K 2 0.624 (15.85) 0.591 (15.00) 0-0.01 (0-0.254) 0.110 (2.79) 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout TO-263AB 0.42 (10.66) 0.33 (8.38) 0.63 (17.02) 0.360 (9.14) 0.320 (8.13) Dimensions in inches and (millimeters) 0.08 (2.032) 0.24 (6.096) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) PIN 1 PIN 2 K - HEATSINK 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.12 (3.05) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g www.vishay.com 1 Document Number 88724 14-Nov-02 SBL10L30, SBLF10L30 & SBLB10L30 Vishay Semiconductors formerly General Semiconductor Maximum Ratings Parameter (TC = 25°C unless otherwise noted) Symbol VRRM VRWM VDC IF(AV) Value 30 21 30 10 Unit V V V A Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 140 °C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse current at tp = 2µs, 1kHz Voltage rate of change (rated VR) Operating junction and storage temperature range RMS Isolation voltage (SBLF type only) from terminals to heatsink with t = 1 second, RH ≤ 30% IFSM IRRM dv / dt TJ, TSTG VISOL 200 1.0 10,000 –65 to +150 4500 3500(2) 1500(3) (1) A A V / µs °C V Electrical Characteristics (T Parameter Maximum instantaneous forward voltage (4) C = 25°C unless otherwise noted) Symbol at IF = 10A, TJ = 25°C at IF = 10A, TJ = 125°C TJ = 25°C TJ = 125°C VF IR Value 0.52 0.43 1.0 100 Unit V mA Maximum instantaneous reverse current at DC blocking voltage(4) Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol RθJC SBL 4.3 SBLF 4.8 SBLB 4.3 Unit °C/W Typical thermal resistance from junction to case per leg Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300µs pulse width, 2% duty cycle Ordering Information Product SBL10L30 SBLF10L30 SBLB10L30 Case TO-220AC ITO-220AC TO-263AB Package Code 45 45 31 45 81 Package Option Anti-Static tube, 50/tube, 2K/carton Anti-Static tube, 50/tube, 2K/carton 13” reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13” reel, 800/reel, 4.8K/carton www.vishay.com 2 Document Number 88724 14-Nov-02 SBL10L30, SBLF10L30 & SBLB10L30 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Resistive or Inductive Load 10 Fig. 2 - Typical Instantaneous Forward Characteristics IF — Instantaneous Forward Current (A) 100 12.5 Average Forward Rectified Current (A) 10 TJ = 150°C 7.5 1.0 TJ = 125°C TJ = 100°C 5 2.5 0.1 TJ = 25°C 0 50 100 150 0.01 0 0.2 0.4 0.6 0.8 1.0 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 3 - Typical Reverse Characteristics 1000 10,000 TJ = 150°C Fig. 4 - Typical Junction Capacitance IR — Instantaneous Reverse Current 10 125°C pF — Junction Capacitance 80 100 100 1,000 1 0.1 100°C 100 0.01 0.001 20 40 60 75°C 10 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 5 - Typical Thermal Impedance 100 Transient Thermal Impedance (¡C/W) 10 1 0.1 0.01 0.1 1 10 t — Pulse Duration (sec.) Document Number 88724 14-Nov-02 www.vishay.com 3
SBL10L30
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,主要应用于工业控制、消费电子等领域。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种工作模式,支持多种外设接口,适用于多种嵌入式系统设计。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考PDF文档中的引脚图。

4. 参数特性:工作电压范围为2.0V至3.6V,工作频率可达72MHz,内置64KB至512KB的闪存和20KB的SRAM。

5. 功能详解:包括GPIO、定时器、ADC、通信接口(UART、SPI、I2C)等模块的详细介绍和使用方法。

6. 应用信息:适用于需要高性能处理和丰富外设接口的应用场景,如工业自动化、医疗设备、智能家居等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm,具有较好的热性能和电气性能。
SBL10L30 价格&库存

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