SBYV28-50

SBYV28-50 thru SBYV28-200 Vishay Semiconductors formerly General Semiconductor Soft Recovery Ultrafast Plastic Rectifier DO-201AD Reverse Voltage 50 to 200V Forward Current 3.5A Features 1.0 (25.4) Min. 0.210 (5.3) 0.190 (4.8) Dia. 0.375 (9.5) 0.285 (7.2) • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes • Ultrafast recovery time for high efficiency • Glass passivated junction • High temperature soldering guaranteed: 250°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Mechanical Data 1.0 (25.4) Min. 0.052 (1.32) 0.048 (1.22) Dia. Dimensions in inches and (millimeters) Case: JEDEC DO-201AD molded plastic body over passivated chip Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.045 oz., 1.2 g Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Minimum reverse breakdown voltage at 100µA Maximum average forward rectified current 0.375” (9.5mm) lead lengths at TL = 85°C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load at TJ = 150°C Typical thermal resistance (1) Symbols SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200 Units VRRM VRMS VDC V(BR) IF(AV) 50 35 50 55 100 70 100 110 3.5 150 105 150 165 200 140 200 220 V V V V A IFSM RΘJA TJ, TSTG 90 25 -55 to +150 A °C/W °C Operating and storage temperature range Electrical Characteristics Parameter Maximum instantaneous forward voltage at 3.5A (2) Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Typical junction capacitance at 4.0V, 1MHz Ratings at 25°C ambient temperature unless otherwise specified. Symbols SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200 Units TJ=25°C TJ=150°C TA=25°C TA=100°C TJ=25°C VF IR trr CJ 1.1 0.89 5.0 300 20 20 V µA ns pF Notes: (1) Lead length = 3/8” on P.C. Board with 1.5” x 1.5” copper surface (2) Pulse test: tp = 300µs, duty cycle ≤ 2% Document Number 88737 11-Feb-02 www.vishay.com 1 SBYV28-50 thru SBYV28-200 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curves Average Forward Rectified Current (A) 6.0 90 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) 80 70 60 50 40 30 20 10ms Single Half Sine-Wave TJ = 175°C 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 TA, Ambient Temperature P.C.B. Mounted 0.5 x 0.5" (12 x 12mm) Copper Pads Resistive or Inductive Load 0.375" (9.5mm) Lead Length TL Lead Temperature 100 125 150 175 1 10 100 Temperature (°C) Number of Cycles at 50 HZ Fig. 3 – Typical Instantaneous Forward Characteristics 100 1,000 Fig. 4 – Typical Reverse Leakage Characteristics Instantaneous Reverse Leakage Current (µA) Instantaneous Forward Current (A) TJ = 100°C 10 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 100 TJ = 100°C 10 1 1 TJ = 25°C 0.1 0.1 0.01 0.4 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Reverse Switching Characteristics 60 Fig. 6 – Typical Junction Capacitance 100 TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p Recovered Store Change / Reverse Recovery Time, nC/ns 40 30 20 10 di/dt=20A/µs di/dt=50A/µs di/dt=100A/µs di/dt=150A/µs di/dt=50A/µs di/dt=20A/µs Junction Capacitance, pF 50 IF = 4.0A VR=30V di/dt=150A/µs di/dt=100A/µs 10 trr Qrr 0 0 25 50 75 100 125 150 175 1 0.1 1 10 100 Junction Temperature (°C) Reverse Voltage (V) www.vishay.com 2 Document Number 88737 11-Feb-02