SD101AWS-V

SD101AWS-V/101BWS-V/101CWS-V Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • These diodes are also available in the Mini-MELF case with type designations LL101A to LL101C, in the DO35 case with type designations SD101A to SD101C and in the SOD123 case with type designations SD101AW-V to SD101CW-V. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 20145 Mechanical Data Case: SOD323 Plastic case Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part SD101AWS-V SD101BWS-V SD101CWS-V Ordering code SD101AWS-V-GS18 or SD101AWS-V-GS08 SD101BWS-V-GS18 or SD101BWS-V-GS08 SD101CWS-V-GS18 or SD101CWS-V-GS08 Type Marking SA SB SC Remarks Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak inverse voltage Test condition Part SD101AWS-V SD101BWS-V SD101CWS-V Power dissipation (Infinite Heat Sink) Forward continuous current Maximum single cycle surge 1) Symbol VRRM VRRM VRRM Ptot IF Value 60 50 40 150 1) Unit V V V mW mA A 30 2 10 µs square wave IFSM Valid provided that electrodes are kept at ambient temperature Document Number 85680 Rev. 1.6, 15-Sep-06 www.vishay.com 1 SD101AWS-V/101BWS-V/101CWS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 6501) 1251) - 65 to + 150 Unit K/W °C °C Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Test condition IR = 10 µA Part SD101AWS-V SD101BWS-V SD101CWS-V Leakage current VR = 50 V V R = 40 V V R = 30 V Forward voltage drop IF = 1 mA SD101AWS-V SD101BWS-V SD101CWS-V SD101AWS-V SD101BWS-V SD101CWS-V IF = 15 mA SD101AWS-V SD101BWS-V SD101CWS-V Junction capacitance VR = 0 V, f = 1 MHz SD101AWS-V SD101BWS-V SD101CWS-V Reverse recovery time IF = IR = 5 mA, recover to 0.1 IR Symbol V(BR) V(BR) V(BR) IR IR IR VF VF VF VF VF VF CD CD CD trr Min 60 50 40 200 200 200 410 400 390 1000 950 900 2.0 2.1 2.2 1 Typ. Max Unit V V V nA nA nA mV mV mV mV mV mV ns ns ns ns Typical Characteristics Tamb = 25 °C, unless otherwise specified 10 I F - Forward Current (mA) I F - Forward Current (mA) A B C 100 80 60 40 A B C 1 0.1 20 0 0.01 18477 0 0.2 0.4 0.6 0.8 1.0 18478 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) VF - Forward Voltage (V) Figure 1. Typical Variation of Forward Current vs. Forward Voltage Figure 2. Typical Forward Conduction Curve www.vishay.com 2 Document Number 85680 Rev. 1.6, 15-Sep-06 SD101AWS-V/101BWS-V/101CWS-V Vishay Semiconductors 100 C T - Typical Capacitance (pF) I R - Reverse Current (µA) 125 °C 10 100 °C 1 75 °C 50 °C 0.1 25 °C 0.01 0 18479 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 18480 T j = 25 °C A B C 10 20 30 40 50 0 10 20 30 40 50 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Figure 3. Typical Variation of Reverse Current at Various Temperatures Figure 4. Typical Capacitance Curve as a Function of Reverse Voltage Package Dimensions in mm (Inches): SOD323 1.15 (0.045) 0.8 (0.031) 0.1 (0.004) max foot print recommendation: 0.25 (0.010) min 1.95 (0.077) 1.60 (0.063) cathode bar 0.15 (0.006) 0.10 (0.004) 0.6 (0.024) 0.6 (0.024) 0.40 (0.016) 0.20 (0.008) 2.85 (0.112) 2.50 (0.098) Document no.: S8-V-3910.02-001 (4) Rev. 03 - Date: 08.November 2004 17443 Document Number 85680 Rev. 1.6, 15-Sep-06 1.5 (0.059) 1.1 (0.043) 1.6 (0.063) 0.6 (0.024) www.vishay.com 3 SD101AWS-V/101BWS-V/101CWS-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85680 Rev. 1.6, 15-Sep-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1