SD101A_10

SD101A, SD101B, SD101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Applications • • • • • • HF-Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC/DC converter for notebooks Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part SD101A SD101B SD101C Type differentiation Ordering code Type Marking SD101A SD101B SD101C Remarks Tape and Reel/Ammopack Tape and Reel/Ammopack Tape and Reel/Ammopack VR = 60 V, VF max. 410 mV at IF = 1 mA SD101A-TR or SD101A-TAP VR = 50 V, VF max. 400 mV at IF = 1 mA SD101B-TR or SD101B-TAP VR = 40 V, VF max. 390 mV at IF = 1 mA SD101C-TR or SD101C-TAP Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward continuous current Peak forward surge current Repetitive peak forward current Power dissipation 1) Valid provided that electrodes are kept at ambient temperature. tp = 10 µs Test condition Part SD101A SD101B SD101C Symbol VR VR VR IF IFSM IFRM Ptot Value 60 50 40 30 2 150 3101) Unit V V V mA A mA mW Document Number 85629 Rev. 1.6, 23-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 SD101A, SD101B, SD101C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction temperature Storage temperature range Thermal resistance junction to ambient air 1) Valid provided that electrodes are kept at ambient temperature. Test condition Symbol Tj Tstg RthJA Value 125 - 65 to + 150 3201) Unit °C °C K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown Voltage Test condition IR = 10 µA V R = 50 V Leakage current V R = 40 V V R = 30 V IF = 1 m A Forward voltage drop IF = 15 mA VR = 0 V, f = 1 MHz Diode capacitance VR = 0 V, f = 1 MHz Part SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C Symbol V(BR) V(BR) V(BR) IR IR IR VF VF VF VF VF VF CD CD CD Min. 60 50 40 200 200 200 410 400 390 1000 950 900 2.0 2.1 2.2 Typ. Max. Unit V V V nA nA nA mV mV mV mV mV mV pF pF pF Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 2.0 Tj = 125 °C 10 Tj = 100 °C 1 Tj = 75 °C Tj = 50 °C 0.1 Tj = 25 °C 0.01 0 16204 CD - Diode Capacitance (pF) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Tj = 25 °C IR = Reverse Current (µA) 5 10 15 20 25 30 35 40 45 50 16205 0 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Figure 1. Reverse Current vs. Reverse Voltage Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85629 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 23-Jul-10 SD101A, SD101B, SD101C Vishay Semiconductors 10.00 IF - Forward Current (mA) 1.00 0.10 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16206 VF - Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage Package Dimensions in millimeters (inches): DO-35 Cathode identification 0.55. (0.022) max 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85629 Rev. 1.6, 23-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1.7 (0.067) www.vishay.com 3 1.5 (0.059) DO35 Vishay Semiconductors DO35 Package Dimensions in mm (Inches) Cathode Identification 0.55 max. (0.022) 1.7 (0.067) Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 84001 Rev. 1.3, 12-Feb-07 www.vishay.com 1 1.5 (0.059) 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) DO35 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 2 Document Number 84001 Rev. 1.3, 12-Feb-07 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1