SD103AW-V_10

SD103AW-V, SD103BW-V, SD103CW-V Vishay Semiconductors Small Signal Schottky Diodes Features • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • This diode is also available in the MiniMELF case with the type designations LL103A to LL103C, DO-35 case with the type designations SD103A to SD103C and SOD-323 case with type designations SD103AWS-V to SD103CWS-V. • For general purpose applications • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part SD103AW-V SD103BW-V SD103CW-V Ordering code SD103AW-V-GS18 or SD103AW-V-GS08 SD103BW-V-GS18 or SD103BW-V-GS08 SD103CW-V-GS18 or SD103CW-V-GS08 Type marking S6 S7 S8 Remarks Tape and reel Tape and reel Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak reverse voltage Power dissipation (Infinite heat sink) Single cycle surge 10 µs square wave Note 1) Valid provided that electrodes are kept at ambient temperature Test condition Part SD103AW-V SD103BW-V SD103CW-V Symbol VRRM VRRM VRRM Ptot IFSM Value 40 30 20 400 1) 2 Unit V V V mW A Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Note 1) Valid provided that electrodes are kept at ambient temperature Test condition Symbol RthJA Tj Tstg Value 300 1) 125 - 55 to + 150 Unit K/W °C °C Document Number 85681 Rev. 1.4, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 SD103AW-V, SD103BW-V, SD103CW-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Leakage current Test condition V R = 30 V V R = 20 V V R = 10 V Forward voltage drop Diode capacitance Reverse recovery time IF = 20 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 50 mA to 200 mA, recover to 0.1 IR Part SD103AW-V SD103BW-V SD103CW-V Symbol IR IR IR VF VF CD trr 50 10 Min. Typ. Max. 5 5 5 370 600 Unit µA µA µA mV mV pF ns Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 Tamb = 125 °C I F - Forward Current (mA) 1000 IR - Reverse Current (µA) 100 10 1 0.1 0.01 100 10 100 °C 75 °C 50 °C 1 0.1 0.01 0 20084 25 °C 0 0.2 0.4 0.6 0.8 1.0 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage (V) 18488 VF - Forward Voltage (V) Figure 1. Typical Variation of Forward Current vs. Forward Voltage Figure 3. Typical Variation of Reverse Current at Various Temperatures 5 4 3 2 1 0 0 18489 100 C D - Diode Capacitance (pF) tp = 300 ms duty cycle = 2 % I F - Forward Current (A) 10 1 0.5 1.0 1.5 18491 0 10 20 30 40 50 VF - Forward Voltage (V) VR - Reverse Voltage (V) Figure 2. Typical High Current Forward Conduction Curve Figure 4. Typical Capacitance vs. Reverse Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85681 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.4, 05-Aug-10 SD103AW-V, SD103BW-V, SD103CW-V Vishay Semiconductors 50 VR - Reverse Voltage (V) 40 100 mA 30 I F = 400 mA 20 10 0 18492 200 mA 0 100 Tamb - Ambient Temperature (°C) 200 Figure 5. Blocking Voltage Deration vs. Temperature at Various Average Forward Currents Package Dimensions in millimeters (inches): SOD-123 1.35 (0.053) 8° 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Cathode bar 2.85 (0.112) 2.55 (0.100) 0.15 (0.006) 0.10 (0.004) 1 (0.039) 0.2 (0.008) 0° to Mounting Pad Layout 0.85 (0.033) 0.1 (0.004) max. 0.85 (0.033) 0.65 (0.026) 0.45 (0.018) 3.85 (0.152) 3.55 (0.140) 1.40 (0.055) 1.7 (0.067) 2.5 (0.098) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Document Number 85681 Rev. 1.4, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 0.85 (0.033) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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