SD103A_12

SD103A, SD103B, SD103C Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. • These diodes are also available in the SOD-123 and SOD-323 case with type designations SD103AW(S)-V...SD103CW(S)-V, and in the MiniMELF case with type designations LL103A thru LL103C. • For general purpose applications • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Applications • • • • HF-Detector Protection circuit Small battery charger AC-DC/DC-DC converters Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part SD103A SD103B SD103C Type differentiation V R = 40 V V R = 30 V V R = 20 V Ordering code SD103A-TR or SD103A-TAP SD103B-TR or SD103B-TAP SD103C-TR or SD103C-TAP Type Marking SD103A SD103B SD103C Remarks Tape and Reel/Ammopack Tape and Reel/Ammopack Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak inverse voltage Power dissipation (infinite heatsink) Single cycle surge 60 Hz sine wave 1) Test condition Part SD103A SD103B SD103C Symbol VR VR VR Ptot IFSM Value 40 30 20 400 1) Unit V V V mW A 15 Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Document Number 85754 Rev. 1.6, 23-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 SD103A, SD103B, SD103C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 3101) 125 - 55 to + 150 Unit K/W °C °C Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown Voltage Test condition IR = 50 µA V R = 30 V Leakage current V R = 20 V V R = 10 V Forward voltage drop Diode capacitance Reverse recovery time IF = 20 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 50 to 200 mA, recover to 0.1 IR Part SD103A SD103B SD103C SD103A SD103B SD103C Symbol V(BR) V(BR) V(BR) IR IR IR VF VF CD trr 50 10 Min. 40 30 20 5 5 5 370 600 Typ. Max. Unit V V V µA µA µA mV mV pF ns Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 100 10 1 5 IF - Forward Current (mA) IF - Forward Current (A) 0 100 200 300 400 500 600 700 800 900 1000 4 3 2 0.1 0.01 0.001 1 0 0.0 16766 0.5 1.0 1.5 2.0 16765 VF - Forward Voltage (mV) VF - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85754 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 23-Jul-10 SD103A, SD103B, SD103C Vishay Semiconductors 10 000 25 Itot - Typ. Non Repetitve Forward Surge Current (A) 0 20 40 60 80 100 120 140 160 IR - Reverse Current (µA) 20 1000 15 100 10 10 5 1 16767 0 0.1 16769 1.0 10.0 Tj - Junction Temperature (°C) tP - Pulse width (ms) Figure 3. Reverse Current vs. Junction Temperature Figure 5. Typ. Non Repetitive Forward Surge Current vs. Pulse Width 30 f = 1 MHz CD - Diode Capacitance (pF) 25 20 15 10 5 0 0 5 10 15 20 25 30 16768 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): DO-35 Cathode identification 0.55. (0.022) max 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85754 Rev. 1.6, 23-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1.7 (0.067) www.vishay.com 3 1.5 (0.059) Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000