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SD1053C28S30L

SD1053C28S30L

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SD1053C28S30L - Fast Recovery Diodes (Hockey PUK Version), 920/1050 A - Vishay Siliconix

  • 数据手册
  • 价格&库存
SD1053C28S30L 数据手册
SD1053C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 920/1050 A FEATURES • • • • • • • • • • • • • 920/1050 A DO-200AB (B-PUK) PRODUCT SUMMARY IF(AV) High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 3000 V RoHS High current capability COMPLIANT Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 150 °C RoHS compliant Lead (Pb)-free Designed and qualified for industrial level TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS SD1053C..L S20 1050 IF(AV) IF(RMS) IFSM VRRM trr TJ 50 Hz 60 Hz Range TJ Ths 55 1940 15 000 15 700 1800 to 2500 2.0 25 - 40 to 150 S30 920 55 1700 13 000 13 610 1800 to 3000 3.0 V µs °C A UNITS A °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 18 SD1053C..S20L 22 25 18 22 SD1053C..S30L 25 28 30 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1800 2200 2500 1800 2200 2500 2800 3000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1900 2300 2600 1900 2300 2600 2900 3100 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93167 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD1053C..L Series Vishay High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied SD1053C..L S20 S30 UNITS A °C Fast Recovery Diodes (Hockey PUK Version), 920/1050 A IF(AV) IF(RMS) 1050 (450) 920 (390) 55 (85) 1940 15 000 15 700 12 620 55 (85) 1700 13 000 13 610 10 930 11 450 845 772 598 546 8450 1.51 1.67 0.50 A Sinusoidal half wave, initial TJ = TJ maximum 13 210 1125 1027 796 727 11 250 1.34 1.48 0.37 0.33 1.90 kA2s t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave kA2√s V mΩ 0.45 2.26 V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 2.0 3.0 1000 100 - 50 TEST CONDITIONS Ipk SQUARE PULSE (A) TYPICAL VALUES AT TJ = 150 °C IFM dI/dt (A/µs) Vr (V) trr AT 25 % IRRM (µs) 4.0 4.5 Qrr (µC) 400 550 Irr (A) 180 230 dir dt trr t Qrr IRM(REC) S20 S30 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, case junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ, TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 150 0.073 0.031 14 700 (1500) 255 UNITS °C K/W N (kg) g DO-200AB (B-PUK) www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93167 Revision: 14-May-08 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A ΔRthJ-hs CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION SINGLE SIDE 0.009 0.011 0.014 0.020 0.036 DOUBLE SIDE 0.008 0.011 0.014 0.021 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.006 0.011 0.015 0.021 0.036 DOUBLE SIDE 0.006 0.011 0.015 0.022 0.036 TJ = TJ maximum K/W TEST CONDITIONS UNITS Vishay High Power Products Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Maximum Allowable Heatsink Temp erature (°C) Maximum Allowable Heatsink T emperature (°C) 160 140 120 S D1053C..S 20L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.073 K/ W 160 140 120 100 80 60 40 20 0 100 200 S D1053C..S 30L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.073 K/ W Conduction Angle Conduction Angle 100 80 60 40 0 100 200 300 400 500 600 700 Average Forward Current (A) 180° 90° 120° 30° 60° 30° 60° 90° 120° 180° 300 400 500 600 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 Conduction Period Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 Conduc tion Period S D1053C..S 20L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.073 K/ W S D1053C..S 30L S eries (S ingle S ide Cooled) R thJ-hs (DC) = 0.073 K/ W 80 60 40 20 0 0 200 400 600 800 1000 Average Forward Current (A) 30° 60° 90° 120° 180° DC 80 60 40 20 0 200 400 600 800 1000 1200 Average Forward Current (A) 30° 60° 90° 120° 180° DC Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Document Number: 93167 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD1053C..L Series Vishay High Power Products Maximum Allowable Heatsink T emperature (°C) Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 80 30° 60 40 20 DC 0 0 400 800 1200 1600 2000 Average Forward Current (A) 60° 90° 120° 180° Conduction Period 160 140 120 100 S D1053C..S 20L S eries (Double S Cooled) ide R thJ-hs (DC) = 0.031 K/ W S D1053C..S 30L S eries (Double S Cooled) ide RthJ-hs (DC) = 0.031 K/ W Conduction Angle 80 60 40 20 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) 30° 60° 90° 120° 180° Fig. 5 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics Maximum Allowable Heats T ink emperature (°C) 140 120 100 80 60 40 20 0 0 400 30° S D1053C..S 20L S eries (Double S Cooled) ide RthJ-hs (DC) = 0.031 K/ W Maximum Average F orward Power Los (W) s 160 3500 3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) Conduction Angle 180° 120° 90° 60° 30° RMSLimit Conduction Period 60° 90° 120° 180° DC S D1053C..S 20L S eries T = 150°C J 800 1200 1600 2000 Average Forward Current (A) Fig. 6 - Current Ratings Characteristics Fig. 9 - Forward Power Loss Characteristics Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 S D1053C..S 30L S eries (Double S Cooled) ide RthJ-hs (DC) = 0.031 K/ W Maximum Average Forward Power Loss (W) 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 2000 Average Forward Current (A) S D1053C..S 20L S eries TJ = 150°C DC 180° 120° 90° 60° 30° RMSLimit Conduction Period Conduction Angle 80 60 40 20 30° 0 0 200 400 600 800 1000 1200 Average Forward Current (A) 90° 120° 60° 180° Fig. 7 - Current Ratings Characteristics Fig. 10 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93167 Revision: 14-May-08 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Maximum Average F orward Power Loss (W) Vishay High Power Products Peak Half S Wave F ine orward Current (A) 3200 2800 2400 2000 1600 1200 Conduction Angle 16000 14000 180° 120° 90° 60° 30° RMS Limit Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Initial T = 150 °C J No Voltage Reapplied 12000 Rated VRRM Reapplied 10000 8000 6000 4000 2000 0.01 S D1053C..S 20L S eries 800 400 0 0 200 400 600 800 1000 1200 Average Forward Current (A) S D1053C..S 30L S eries T = 150°C J 0.1 Pulse T rain Duration (s) 1 Fig. 11 - Forward Power Loss Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current Maximum Average F orward P ower Loss (W) Peak Half S Wave Forward Current (A) ine 4500 4000 3500 3000 2500 RMS Limit 2000 1500 1000 500 0 0 400 800 1200 1600 2000 Average Forward Current (A) Conduction Period 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 1 DC 180° 120° 90° 60° 30° At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150°C J @60 Hz 0.0083 s @50 Hz 0.0100 s S D1053C..S 30L S eries T = 150°C J S D1053C..S 30L S eries 10 100 Number Of Equa l Amplitude Half Cyc le Current Pulses (N) Fig. 12 - Forward Power Loss Characteristics Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 0.01 S D1053C..S 30L S eries 0.1 Pulse T rain Dura tion (s) 1 Peak Half S Wave Forward Current (A) ine Peak Half S Wave Forward Current (A) ine 14000 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 1 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150 °C J @60 Hz 0.0083 s @50 Hz 0.0100 s Maximum Non R epetitive S e Current urg Versus Pulse T rain Duration. Initial T = 150 °C J No Voltag e Reapplied Rated VRRM Reapplied S D1053C..S 20L S eries 10 100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Document Number: 93167 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD1053C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 10000 Instantaneous Forward Current (A) T = 25°C J T = 150°C J 10000 Instantaneous Forward Current (A) T = 25°C J T = 150°C J 1000 1000 S D1053C..S 20L S eries S D1053C..S 30L S eries 100 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Ins tantaneous Forward Voltage (V) 100 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous Forward Voltage (V) Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics T rans ient Thermal Impedance Z thJ-hs (K/ W) 0.1 S D1053C..S S 20/ 30L S eries 0.01 S teady S tate Value R thJ-hs = 0.073 K/ W (S ingle S ide Cooled) R thJ-hs = 0.031 K/ W (Double S ide Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 S quare Wave Pulse Duration (s) Fig. 19 - Thermal Impedance ZthJ-hs Characteristic 100 V FP 160 V I 80 Forward Recovery (V) T = 150°C J Forward Recovery (V) 120 FP I T = 150°C J 60 80 40 T = 25°C J T = 25°C J 40 S D1053C..S 30L S eries 0 20 S D1053C..S 20L S eries 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us ) 0 400 800 1200 1600 2000 R ate Of R Of Forward Current - di/ dt (A/ us) ise Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93167 Revision: 14-May-08 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Maximum R everse Recovery Time - T (µs) rr 6.5 6 5.5 5 4.5 4 3.5 3 2.5 10 I FM= 1500 A S Pulse ine 1000 A 500 A Vishay High Power Products Maximum Reverse Rec overy T ime - T (µs) rr 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 4 3.5 10 100 1000 I FM = 1500 A S Pulse ine 1000 A 500 A S D1053C..S 20L S eries T = 150 °C; V r > 100V J S D1053C..S S 30L eries T = 150 °C; V r > 100V J 100 1000 Rate Of Fall Of Forward Current - di/dt (A/ µs) Rate Of Fa ll Of Forward Current - di/ dt (A/ µs) Fig. 22 - Recovery Time Characteristics Fig. 25 - Recovery Time Characteristics Maximum Reverse R overy Charge - Qrr (µC) ec 1000 900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 S D1053C..S 20L S eries T = 150 °C; Vr > 100V J 1000 A I FM= 1500 A S ine Pulse Maximum R everse Rec overy Charge - Qrr (µC) 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 250 300 S D1053C..S 30L S eries T = 150°C; V r > 100V J I FM = 1500 A S Pulse ine 1000 A 500 A 500 A Rate Of Fall Of Forward Current - di/ dt (A/µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 23 - Recovery Charge Characteristics Fig. 26 - Recovery Charge Characteristics Maximum Reverse Recovery Current - Irr (A) I 450 400 350 300 250 200 150 100 50 0 0 = 1500 A FM S Pulse ine 1000 A 500 A Maximum Reverse R overy Current - Irr (A) ec 500 700 I FM = 1500 A 600 500 500 A S Pulse ine 1000 A 400 300 200 100 0 0 50 100 150 200 250 300 S D1053C..S 30L S eries T = 150°C; V r > 100V J S D1053C..S 20L S eries T = 150 °C; Vr > 100V J 50 100 150 200 250 300 Rate Of Fa ll Of Forward Current - d i/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 24 - Recovery Current Characteristics Fig. 27 - Recovery Current Characteristics Document Number: 93167 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD1053C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 1E4 10 joules p er pulse 2 1 0.6 0.4 6 1E4 4 Peak Forward Current (A) Peak Forward Current (A) 1500 2000 3000 4000 6000 10000 15000 20000 100 50 Hz 400 200 1000 600 1E3 0.2 0.08 S D1053C..S 20L S eries S inusoidal Pulse T = 150°C, VRRM = 800V J d v/ dt = 1000V/ µs 1E3 tp tp S D1053C..S 20L S eries T rapezoidal Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/ us, di/ dt = 300A/ us 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 2000 3000 4000 6000 1000 400 200 100 50 Hz Fig. 31 - Frequency Characteristics 1E4 Peak Forward Current (A) Peak F orward Current (A) 6 4 2 1 10 joules per p ulse 1E3 10000 15000 tp 20000 S D1053C..S 20L S eries S inusoida l Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us 1E3 0.4 0.8 0.6 tp SD1053C..S 20L S eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ dt = 1000V/ µs, di/ dt = 100A/ µs 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 29 - Frequency Characteristics Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 Peak Forward Current (A) Peak Forward Current (A) 10 joules p er p ulse 6 4 2 2000 4000 400 200 1000 600 100 50 Hz 1E3 0.6 0.4 1 0.8 1E3 6000 10000 15000 20000 tp S D1053C..S 20L Series T rap ezoid al Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/us d i/ dt = 100A/ us tp S D1053C..S 20L S eries T rapezoidal Pulse TJ = 150°C, VRRM = 800V d v/ dt = 1000V/ µs, di/ dt = 300A/ µs 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Puls Basewidth (µs) e Pulse Basewidth (µs) Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 33 - Frequency Characteristics www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 93167 Revision: 14-May-08 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 1E4 10 joules per pulse 6 Vishay High Power Products 1E4 Peak Forward Current (A) 2 1 0.6 Peak Forward Current (A) 4 1000 600 400 200 100 50 Hz 1E3 0.4 0.2 1E3 4000 6000 10000 1500 2000 3000 S D1053C..S 30L S eries T pezoidal Pulse ra T = 55°C, VRRM = 1000V C d v/ dt = 1000V/ us, di/ dt = 300A/ us tp S D1053C..S 30L Series S inusoidal Pulse TJ = 150°C, VRRM = 1000V d v/ d t = 1000V/ µs tp 15000 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Puls Basewidth (µs) e Pulse Basewidth (µs) Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics 1E 4 Fig. 37 - Frequency Characteristics 1E4 Peak F orward Current (A) 2000 3000 4000 1000 Peak Forward Current (A) 400 200 100 50 Hz 4 2 6 10 joules p er pulse 1E 3 6000 10000 15000 20000 tp S D1053C..S 30L S eries S inusoidal Pulse T = 55°C, VRRM = 1000V C d v/ dt = 1000V/us 1E3 0.6 0.8 1 tp S D1053C..S 30L S eries T rap ezoid al Pulse T = 150°C, VRRM = 1000V J d v/ dt = 1000V/ µs, di/ dt = 100A/ µs 1E 2 1E 1 1E 2 1E 3 1E 4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Puls Basewidth (µs) e Fig. 35 - Frequency Characteristics Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 Peak Forward Current (A) Peak Forward Current (A) 10 joules per p ulse 6 4 2 1E3 1 0.8 0.6 S D1053C..S 30L S eries T rapezoidal Pulse T = 150°C, VRRM = 1000V J d v/ dt = 1000V/ µs, di/ dt = 300A/ µs 1E3 6000 1000 2000 3000 4000 600 100 400 200 50 Hz 10000 15000 tp tp 1E2 1E1 1E2 1E3 1E4 1E2 1E1 S D1053C..S 30L S eries T rapezoidal Pulse T = 55°C, VRRM = 1000V C d v/ dt = 1000V/ us, di/ dt = 100A/ us 1E2 1E3 1E4 Pulse Basewidth (µs) Puls Basewidth (µs) e Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics Document Number: 93167 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 SD1053C..L Series Vishay High Power Products ORDERING INFORMATION TABLE Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Device code SD 1 1 2 3 4 5 6 7 105 2 Diode 3 3 C 4 30 5 S30 6 L 7 Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code L = PUK case DO-200AB (B-PUK) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246 www.vishay.com 10 For technical questions, contact: ind-modules@vishay.com Document Number: 93167 Revision: 14-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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