SD263C36S50L

SD263C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 375 A FEATURES • High power FAST recovery diode series • 4.5 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery DO-200AB (B-PUK) RoHS COMPLIANT • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AB (B-PUK) • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY IF(AV) 375 A TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM VRRM trr TJ 50 Hz 60 Hz Range TEST CONDITIONS VALUES 375 Ths 55 408 5500 5760 3000 to 4500 4.5 TJ 125 - 40 to 125 V µs °C A UNITS A °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 30 SD263C..S50L 36 40 45 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 3000 3600 4000 4500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 3100 3700 4100 4600 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93173 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD263C..S50L Series Vishay High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 50 % VRRM reapplied No voltage reapplied 50 % VRRM reapplied VALUES 375 (150) 55 (85) 725 5500 5760 4630 Sinusoidal half wave, initial TJ = TJ maximum 4850 151 138 107 98 1510 1.56 1.71 1.64 mΩ (I > π x IF(AV)), TJ = TJ maximum Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.53 3.20 V kA2√s V kA2s A UNITS A °C Fast Recovery Diodes (Hockey PUK Version), 375 A t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 5.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 150 °C IFM dI/dt (1) (A/µs) 100 Vr (V) - 50 trr AT 25 % IRRM (µs) 4.5 Qrr (µC) 680 Irr (A) 240 trr t Qrr IRM(REC) dir dt S50 Note (1) dI/dt = 25 A/µs, T = 25 °C J THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.11 0.05 9800 (1000) 230 K/W N (kg) g UNITS °C DO-200AB (B-PUK) www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93173 Revision: 14-May-08 SD263C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A ΔRthJ-hs CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION SINGLE SIDE 0.012 0.014 0.018 0.026 0.045 DOUBLE SIDE 0.011 0.015 0.018 0.027 0.046 RECTANGULAR CONDUCTION SINGLE SIDE 0.008 0.014 0.019 0.027 0.046 DOUBLE SIDE 0.008 0.014 0.019 0.028 0.046 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 Maxim um Allowable Heatsin k Tem perature ( °C) 120 110 100 90 80 70 60 50 40 30 20 10 0 50 100 M a x im um A llo w a b le H e a t sin k Te m p e ra t u re (°C ) SD263C..S50L Series (Sin gle Side Cooled) R t hJ-hs (DC) = 0.11 K/W 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 10 0 100 30° SD 2 6 3 C ..S 5 0 L S e rie s (D o ub le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 5 K / W C o nduc tio n A ng le C o ndu c tio n A ng le 6 0° 9 0° 1 2 0° 1 8 0° 60° 30° 150 90° 120° 180° 200 250 300 20 0 30 0 4 00 5 00 Average Forward Curren t (A) A v e r a g e Fo rw a rd C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 13 0 M a x im um A llo w a b le H e a t sin k T e m pe ra t u re ( °C ) 12 0 11 0 10 0 90 80 70 60 50 40 30 20 10 0 50 1 0 0 15 0 20 0 2 5 0 3 0 0 3 5 0 40 0 45 0 A v e ra g e F o rw a rd C u rr e n t (A ) 3 0° 60 ° 90° 1 2 0° 1 8 0° DC C on du ctio n Pe rio d 130 Maxim um Allowable Heatsin k Tem perature (°C) S D 2 6 3 C ..S 5 0 L Se rie s ( Sin g le S id e C o o le d ) R th J-hs (D C ) = 0 .1 1 K / W 120 110 100 90 80 70 60 50 40 30 20 10 0 200 400 600 800 Average Forward Current (A) 30° 60° 90° 120° 180° DC C o nd uc tio n Pe rio d SD263C..S50L Series (D ouble Side Cooled) R thJ-hs (DC) = 0.05 K/W Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Document Number: 93173 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD263C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 375 A 6000 180° 120° 90° 60° 30° Peak Half Sin e W ave Forward Curren t (A) 1600 Maxim um Average Forward Power Loss (W ) 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 Average Forward Current (A) Co n duc tio n An gle 5000 M a xim u m N o n R e pe tit iv e Su rg e C u rre n t V e r su s P ulse Tr ain D ura tio n . In itial TJ = 1 2 5°C N o V o lt ag e R e a pp lie d 5 0 % R at e d V RR M Re ap plie d RM S Lim it 4000 3000 SD263C..S50L Series TJ = 125°C 2000 S D 2 6 3 C ..S5 0L Se rie s 1000 0.01 0.1 Pulse Train Duration (s) 1 Fig. 5 - Forward Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 2 2 50 M a xim u m A v e ra ge Fo rw a rd P o w e r L os s (W ) 2 0 00 1 7 50 1 5 00 1 2 50 1 0 00 7 50 5 00 2 50 0 0 10 0 2 00 3 00 40 0 50 0 60 0 7 00 80 0 A v e ra g e F o rw a r d C u rre n t (A ) S D 2 6 3 C ..S 5 0 L Se rie s T J = 1 2 5° C C o ndu ctio n Pe rio d 10000 Instantaneous Forward Current (A) DC 1 8 0° 1 2 0° 9 0° 6 0° 3 0° R M S Lim it TJ = 25°C TJ = 125°C 1000 SD263C..S50L Series 100 1 2 3 4 5 6 7 8 Instantan eous Forw ard Voltage (V ) Fig. 6 - Forward Power Loss Characteristics Fig. 9 - Forward Voltage Drop Characteristics 55 0 0 1 T ra n sie n t Th e rm a l Im pe d a n c e Z thJ-hs ( K / W ) S t e a d y St a t e V alu e R th J- hs = 0 .1 1 K/ W (S in gle Sid e C o o le d ) 0 .1 R th J- hs = 0 .0 5 K/ W ( D o u b le S id e C o o le d ) ( D C O p e ra t io n ) P e a k Ha lf Sin e W a v e Fo rw a rd C u rre n t ( A ) A t A n y R a t e d Lo a d C o n d itio n A n d W ith 5 0 0 0 5 0 % R a te d V R RM A p p lie d F o llo w in g S u rg e In it ia l TJ = 1 2 5 °C 45 0 0 @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 15 0 0 10 0 0 1 10 1 00 N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N ) 0 .0 1 S D 2 6 3 C ..S5 0 L Se rie s S D 2 6 3 C ..S5 0 L S e r ie s 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 Sq u a r e W a v e P u lse D u rat io n ( s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Thermal Impedance ZthJ-hs Characteristic www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93173 Revision: 14-May-08 SD263C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A 500 450 400 Fo rw a rd R ec o v e ry (V ) 350 300 250 200 150 100 50 0 0 2 00 4 00 6 00 80 0 1 00 0 1 20 0 1 40 0 1 600 18 00 2 0 00 R a t e O f R ise O f Fo rw a rd C u rre n t - d i/ d t (A / u s) SD 2 6 3 C ..S 5 0 L Se rie s TJ = 2 5°C V FP I TJ = 1 2 5°C Fig. 11 - Typical Forward Recovery Characteristics 9 M a x im um R e v e rse R e c o v e r y Tim e - Trr (µ s) M a xim u m Re v e rse R e c o v e ry C urre n t - Irr (A ) 8 7 6 5 4 3 2 10 10 0 10 0 0 I FM = 100 0 A Sine Pu lse 50 0 A 1 50 A 60 0 S D 2 6 3 C ..S 5 0 L Se rie s TJ = 1 2 5 °C ; V r > 1 0 0 V 50 0 40 0 30 0 20 0 10 0 0 0 50 1 00 15 0 20 0 2 50 3 0 0 S D 2 6 3 C ..S5 0 L S e r ie s TJ = 1 2 5 °C ; V r > 1 0 0 V I FM = 10 00 A Sine Pu lse 500 A 1 50 A Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs) Rate O f Fall O f Fo rw ard C urre nt - d i/dt (A /µs) Fig. 12 - Recovery Time Characteristics Fig. 14 - Recovery Current Characteristics 1 40 0 M a x im u m Re v e r se R e c o v e r y C h a r ge - Q rr (µ C ) 1 20 0 1 00 0 8 00 6 00 4 00 2 00 0 0 50 10 0 1 50 2 00 2 50 30 0 SD 2 6 3 C ..S 5 0 L Se rie s TJ = 1 2 5 ° C ; V r > 1 0 0 V 150 A I FM = 1 00 0 A Sin e Pulse 1E4 10 jo ule s pe r pu lse Peak Forward Current (A) 6 4 2 1 0 .5 500 A 1E3 0 .3 tp S D 2 6 3 C..S5 0 L Se rie s S i nu so ida l Pu lse TJ = 1 2 5°C , V RRM = 1 5 0 0 V d v /d t = 1 0 0 0 V/ µs 1E2 1E 1 1E2 1E3 1E4 R ate O f Fall O f Fo rwa rd Curre nt - d i/dt ( A/µs) Pulse Basew idth ( µs) Fig. 13 - Recovery Charge Characteristics Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Document Number: 93173 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD263C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 375 A 1E 4 1E4 Peak Forward Current (A) tp 4 00 1 5 00 1 00 0 2 0 00 200 1 00 5 0 Hz Peak Forward Current (A) 1 00 50 Hz 1E3 3000 4000 6 00 0 10000 tp S D 2 6 3 C ..S5 0 L Se rie s S i nu so id al Pu l se TC = 5 5° C , V RR M= 1 5 0 0 V d v / dt = 1 0 0 0 V/ u s 1E 3 600 1 00 0 1500 20 0 0 3000 4 00 0 400 20 0 1E2 1E 1 1E2 1E3 1E 4 1E 2 1E1 S D 2 6 3 C ..S5 0 L Se rie s Tr ape zo i dal Pu ls e TC = 5 5°C, V RRM = 15 00 V d v / dt = 10 0 0V / us , d i/ d t = 3 0 0 A / us 1E 2 1E 3 1E4 Pulse Basew idth (µs) Pulse Basewidth ( µs) Fig. 16 - Frequency Characteristics Fig. 18 - Frequency Characteristics 1E4 S D 2 6 3 C ..S5 0 L Se r ie s T rap ezo id al P uls e TJ = 1 2 5°C , V RRM = 1 5 0 0 V d v / dt = 1 0 0 0 V /µ s d i/ d t = 3 0 0 A /µ s 1E4 Peak Forward Curren t (A) Peak Forward Current (A) tp S D 2 6 3 C ..S5 0 L S eri es T rape z oi dal Pu lse TJ = 1 2 5°C , V RRM = 1 5 0 0 V d v / d t = 1 0 0 0 V/ µ s di /d t = 1 0 0 A / µ s tp 1 0 jo u le s pe r pu lse 6 4 2 1 0. 5 0.3 1 0 jo ule s pe r pu lse 1E3 1 0. 5 0.3 4 2 6 1E3 1E2 1E1 1E 2 1E3 1E4 1E2 1E1 1E 2 1E3 1E4 Pulse Basew idth (µs) Pulse Basew idth (µs) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics 1E 4 tp Peak Forward Current (A) 1E 3 1000 1 5 00 2 00 0 3 00 0 4000 6 0 00 60 0 4 00 20 0 10 0 50 Hz S D 2 6 3 C.. S5 0 L Se rie s T rap e zoi da l Pul se TC = 5 5°C , V RRM = 1 5 0 0 V d v / dt = 1 0 0 0 V/ u s, di /d t = 1 0 0 A / u s 1E 2 1E1 1E 2 1E 3 1E4 Pulse Basew idth (µs) Fig. 20 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93173 Revision: 14-May-08 SD263C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A ORDERING INFORMATION TABLE Device code SD 1 1 2 3 4 5 6 7 26 2 Diode 3 3 C 4 45 5 S50 6 L 7 Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code L = PUK case DO-200AB (B-PUK) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246 Document Number: 93173 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors DO-200AB (B-PUK) DIMENSIONS in millimeters (inches) 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 58.5 (2.30) DIA. MAX. 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 26.9 (1.06) 25.4 (1) 53 (2.09) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95246 Revision: 05-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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