SD553C30S50L_12

SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A FEATURES • High power FAST recovery diode series • 6.0 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery DO-200AB (B-PUK) RoHS COMPLIANT • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AB (B-PUK) • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY IF(AV) 560 A TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz Range TEST CONDITIONS VALUES 560 55 1120 25 12 000 12 570 721 658 3000 to 4500 6.0 TJ 125 - 40 to 125 UNITS A °C A °C A IFSM I2 t VRRM trr TJ kA2s V µs °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 30 SD553C..S50L 36 40 45 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 3000 3600 4000 4500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 3100 3700 4100 4600 75 IRRM MAXIMUM AT TJ = 125 °C mA Document Number: 93177 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD553C..S50L Series Vishay High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 50 % VRRM reapplied No voltage reapplied 50 % VRRM reapplied VALUES 560 (210) 55 (85) 1120 12 000 12 570 10 100 Sinusoidal half wave, initial TJ = TJ maximum 10 570 721 658 510 466 7210 1.77 1.95 0.98 mΩ (I > π x IF(AV)), TJ = TJ maximum Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave 0.89 3.24 V kA2√s V kA2s A UNITS A °C Fast Recovery Diodes (Hockey PUK Version), 560 A t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 5.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 125 °C IFM dI/dt (A/µs) 100 Vr (V) - 50 trr AT 25 % IRRM (µs) 6.0 Qrr (µC) 900 Irr (A) 250 trr t Qrr IRM(REC) dir dt S50 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, ± 10 % Approximate weight Case style Conforms to JEDEC SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.073 0.031 14 700 (1500) 255 DO-200AB (B-PUK) K/W N (kg) g UNITS °C www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93177 Revision: 14-May-08 SD553C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 560 A ΔRthJ-hs CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION SINGLE SIDE 0.009 0.011 0.014 0.020 0.036 DOUBLE SIDE 0.009 0.011 0.014 0.020 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.006 0.011 0.015 0.021 0.036 DOUBLE SIDE 0.006 0.011 0.015 0.021 0.036 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC °C ) 130 M a x im u m A llo w a b le H e a t sin k T e m p e ra tu r e ( °C ) 120 110 100 90 80 70 60 50 40 30 0 1 00 M a x im um A llo w a b le H e a tsin k T e m pe r a tu re ( S D 5 5 3 C ..S5 0 L S e rie s (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 7 3 K / W 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 30 ° S D 5 5 3 C ..S 5 0 L Se rie s (D o u b le Sid e C o o le d ) R t hJ-hs (D C ) = 0 .0 3 1 K / W Co nd uc tio n A ng le C o nd uc tio n Ang le 6 0° 90° 1 2 0° 1 8 0° 30° 60° 90° 1 2 0° 1 8 0° 300 4 00 200 1 00 2 00 30 0 40 0 50 0 60 0 7 0 0 80 0 A v e ra g e Fo rw a r d C u rre n t ( A ) A v e ra g e F o r w a rd C u rr e n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 130 M a x im u m A llo w a b le H e a t sin k T e m p e ra tu r e (°C ) 120 110 100 90 80 70 60 50 40 30 20 10 0 1 00 20 0 300 400 5 00 6 00 A v e ra g e F o rw a r d C u rre n t (A ) 3 0° 6 0° 90° 120° C o nd uc tio n Pe riod 130 Maximum Allowable Heatsink Tem perature (°C) SD 5 5 3 C ..S 5 0 L S e rie s (Sin g le S id e C o o le d ) R thJ-hs ( D C ) = 0 .0 7 3 K/ W 120 110 100 90 80 70 60 50 40 30 20 10 0 200 400 600 800 1000 1200 Average Forw ard Curren t (A) 30° 60° 90° 120° 180° DC C o nd uc tio n Pe rio d SD 553C..S50L Series (Double Side Cooled) R thJ-h s (DC) = 0.031 K/W 180 ° DC Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Document Number: 93177 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A 1 40 0 0 180° 120° 90° 60° 30° P e a k H a lf Sin e W a v e F o rw a rd C urre n t (A ) 1 20 0 0 1 00 0 0 80 0 0 60 0 0 40 0 0 S D 5 5 3 C ..S 5 0 L S e rie s 20 0 0 0 .0 1 0 .1 P u lse T ra in D u ra tio n (s) 1 2500 M aximum Average Forw ard Power Loss (W ) 2250 2000 1750 1500 1250 1000 750 500 250 0 0 100 200 300 400 500 600 700 800 Averag e Forw ard Current (A) Co n duc tio n An g le M ax im u m N o n R e pe t it iv e Su rge C u rre nt V e rsu s P ulse T ra in D u rat io n . In itial TJ = 1 2 5°C N o V o lta g e Re ap plie d 5 0 % R at e d VR RM R e ap p lie d RMS Lim it SD553C..S50L Series TJ = 125°C Fig. 5 - Forward Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 3500 Maxim um Average Forw ard Power Loss ( W) 3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 Average Forward Current (A) C o nd uc tio n Pe rio d 10000 In stan taneous Forward Current (A) DC 180° 120° 90° 60° 30° RM S Lim it TJ = 25°C 1000 TJ = 125°C SD553C..S50L Series TJ = 125°C SD553C..S50L Series 100 1.5 2 2. 5 3 3.5 4 4.5 5 In stan tan eous Forward V oltage (V ) Fig. 6 - Forward Power Loss Characteristics Fig. 9 - Forward Voltage Drop Characteristics 12 0 0 0 Pe a k H a lf S in e W a v e F o rw a rd C u rr e n t (A ) 8000 7000 6000 5000 4000 3000 1 10 100 N um be r O f E qua l A m p litude Ha lf Cy c le C urre n t Pulse s (N ) T ra n sie n t T h e rm a l Im p e d an c e Z A t A n y R a te d Lo a d C o n d it io n A n d W it h 1 1 0 0 0 5 0 % R a t e d V R RM A p p lie d Fo llo w in g S u rg e In it ia l T J = 1 2 5 °C 10 0 0 0 @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 9000 0 .1 (K / W ) SD 5 5 3 C ..S5 0 L S e rie s thJ-hs 0 .0 1 St e a d y S ta t e V a lu e R t hJ-hs = 0 .0 7 3 K / W ( Sin g le S id e C o o le d ) R thJ- hs = 0 .0 3 1 K / W ( D o ub le S id e C o o le d ) ( D C O p e ra t io n ) S D 5 5 3 C ..S5 0 L S e rie s 0 .0 0 1 0. 00 1 0 .0 1 0 .1 1 10 10 0 Sq u a re W a v e P u lse D u ra t io n ( s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Thermal Impedance ZthJ-hs Characteristic www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93177 Revision: 14-May-08 SD553C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 560 A 4 00 3 50 3 00 F o rw a rd R e c o v e ry ( V ) 2 50 2 00 1 50 1 00 50 0 0 20 0 40 0 600 8 00 1 0 00 12 00 1 4 00 1 60 0 18 0 0 20 00 R at e O f R ise O f Fo rw a rd C u rre n t - d i/d t ( A / us) SD 5 5 3 C ..S 5 0 L S e rie s T = 2 5°C J V FP I T = 1 2 5°C J Fig. 11 - Typical Forward Recovery Characteristics M ax im u m R e v e rse R e c o v e ry C u rr e n t - Ir r (A ) 1 0 .5 10 9. 5 9 8. 5 8 7. 5 7 6. 5 6 5. 5 5 4. 5 4 10 8 00 I FM = 1 5 00 A M a xim u m R e v e rse R e c o v e ry T im e - T rr (µ s) SD 5 5 3 C ..S5 0 L Se rie s TJ = 1 2 5 ° C ; V r > 1 0 0 V 7 00 6 00 5 00 4 00 3 00 2 00 1 00 0 0 50 Sin e Pulse 1 00 0 A 50 0 A I FM = 15 00 A Sin e Pu lse 100 0 A 50 0 A SD 5 5 3 C ..S5 0 L S e r ie s TJ = 1 2 5 °C ; V r > 1 0 0 V 1 00 1 50 2 00 2 5 0 3 0 0 1 00 10 0 0 Rate O f Fa ll O f Forw ard Current - d i/dt ( A/µs) R ate O f Fall O f Fo rwa rd Current - di/dt (A /µs) Fig. 12 - Recovery Time Characteristics Fig. 14 - Recovery Current Characteristics 25 0 0 M a x im u m Re v e rse R e c o v e ry C h a rg e - Q rr ( µC ) I F M = 15 00 A Sine Pulse 1E4 1 0 jo ule s pe r pulse 20 0 0 1 00 0 A 500 A Peak Forw ard Current (A) 6 4 2 1 0 .8 0 .6 0. 4 0 .2 S D 5 5 3 C ..S5 0 L S eri es S i nu so id al Pu lse TJ = 1 25° C , V RRM = 1 5 0 0 V d v /d t = 1 0 0 0 V/ µ s 15 0 0 1E3 10 0 0 50 0 SD 5 5 3 C ..S5 0 L S e rie s TJ = 1 2 5 °C ; V r > 1 0 0 V 0 0 50 10 0 1 50 2 00 2 50 3 00 tp 1E2 1E1 1E2 1E 3 1E 4 Rate O f Fall O f Fo rward C urre nt - di/dt ( A/µs) Pulse Basewidth (µs) Fig. 13 - Recovery Charge Characteristics Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Document Number: 93177 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A 1E4 1E 4 Peak Forward Current (A) 1000 1 50 0 2000 Peak Forward Current (A) 6 00 4 0 0 2 0 0 1 00 50 Hz tp 200 400 600 1 00 50 H z 1E 3 3000 4 00 0 6000 10 0 0 0 tp S D 55 3 C..S5 0 L Se rie s S i nu so id al Pu ls e TC = 5 5°C , V RRM = 1 5 0 0 V d v / dt = 1 0 0 0 V/ u s 1E3 10 0 0 1 50 0 2 0 00 3000 40 0 0 6 00 0 S D 55 3C ..S5 0 L S er ie s Trap e zo idal Pul se T = 5 5°C, V RRM = 1 5 0 0 V C d v / dt = 10 0 0 V/u s, di/ d t = 3 0 0 A / us 1E 2 1E1 1E 2 1E3 1E 4 1E2 1E 1 1E 2 1E 3 1E4 Pulse Basew idth (µs) Pu lse Basew idth (µs) Fig. 16 - Frequency Characteristics Fig. 18 - Frequency Characteristics 1E4 1E 4 S D 5 5 3 C.. S5 0 L Se rie s S in uso id al Pu ls e TJ = 1 25°C , V RRM = 15 0 0 V d v/ d t = 1 0 0 0 V/ µ s Peak Forw ard Current (A) Peak Forward Curren t (A) tp S D 5 5 3 C..S5 0 L Se rie s Tra pez o idal Pul se TJ = 1 2 5°C , V RRM = 1 5 0 0 V d v / d t = 1 00 0V / µs di /d t = 1 0 0 A / µs tp 10 jo u le s pe r pulse 6 4 8 10 jo ules pe r p ulse 8 6 1E3 2 1 0.8 0 .6 0.4 4 1E 3 1 0 .8 0.6 0 .4 2 1E2 1E1 1E 2 1E 3 1E 4 1E 2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basew idth (µs) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 tp Peak Forward Curren t (A) 50 H z 4 00 20 0 10 0 1E3 2 00 0 3 00 0 4000 6000 15 0 0 60 0 1000 S D 5 5 3 C ..S 50 L Se ri e s Tra pe zo ida l Pu lse TC = 5 5° C, V RRM = 1 5 00 V d v /d t = 1 0 0 0 V /u s, d i/ dt = 1 0 0 A /u s 1E2 1E1 1E2 1E3 1E4 Pulse Basew idth (µs) Fig. 20 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93177 Revision: 14-May-08 SD553C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 560 A ORDERING INFORMATION TABLE Device code SD 1 1 2 3 4 5 6 7 55 2 Diode 3 3 C 4 45 5 S50 6 L 7 Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code L = PUK case DO-200AB (B-PUK) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246 Document Number: 93177 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors DO-200AB (B-PUK) DIMENSIONS in millimeters (inches) 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 58.5 (2.30) DIA. MAX. 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 26.9 (1.06) 25.4 (1) 53 (2.09) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95246 Revision: 05-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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