SD600NR

SD600N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 600 A FEATURES • • • • • • • • • Wide current range High voltage ratings up to 3200 V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Compression bonded encapsulations RoHS complaint Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT B-8 TYPICAL APPLICATIONS PRODUCT SUMMARY IF(AV) 600 A • • • • • Converters Power supplies Machine tool controls High power drives Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS SD600N/R 04 to 20 600 TC 92 940 50 Hz 60 Hz 50 Hz 60 Hz Range 13 000 13 600 845 772 400 to 2000 - 40 to 180 10 500 11 000 551 503 2200 to 3200 - 40 to 150 kA2s V °C A 54 22 to 32 UNITS A °C IF(AV) IF(RMS) IFSM I2 t VRRM TJ ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 08 12 SD600N/R 16 20 22 28 32 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1600 2000 2200 2800 3200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1700 2100 2300 2900 3300 35 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93551 Revision: 17-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD600N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 600 A FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS SD600N/R 04 to 20 22 to 32 600 Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave 92 570 100 Maximum RMS forward current IF(RMS) DC at TC = 75 °C (04 to 20), TC = 36 °C (25 to 32) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied 13 000 13 600 10 900 Sinusoidal half wave, initial TJ = TJ maximum 11 450 845 772 598 546 8450 0.78 0.87 0.35 0.31 1.31 940 10 500 11 000 8830 9250 551 503 390 356 5510 0.84 0.88 0.40 mΩ 0.38 1.44 V kA2√s V kA2s A 54 375 UNITS A °C A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Maximum allowed mounting torque ± 10 % Approximate weight Case style See dimensions (link at the end of datasheet) SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Not-lubricated threads TEST CONDITIONS SD600N/R 04 to 20 22 to 32 UNITS - 40 to 180 - 40 to 150 - 55 to 200 0.1 °C K/W 0.04 50 454 B-8 Nm g www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93551 Revision: 17-Apr-08 SD600N/R Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 600 A ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.012 0.014 0.017 0.025 0.042 RECTANGULAR CONDUCTION 0.008 0.014 0.019 0.026 0.042 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case Temperature (°C) Maximum Allowable Case T emperature (°C) 180 170 160 150 140 130 120 110 100 90 80 0 100 200 300 400 500 600 700 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 30° 60° 90° Conduction Angle 150 140 130 120 110 100 90 80 70 60 50 0 S D600N/ R S eries (400V to 2000V) RthJC (DC) = 0.1 K/ W S D600N/ R S eries (2500V to 3200V) RthJC (DC) = 0.1 K/ W Conduction Angle 30° 60° 90° 120° 180° 120° 180° 100 200 300 400 500 600 700 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Maximum Allowable Cas T e emperature (°C) Maximum Allowable Case T emperature (°C) 180 170 160 150 140 130 120 110 100 90 80 70 0 200 400 600 30° 60° 90° 120° 180° DC 800 1000 Conduction Period 150 140 130 120 110 100 90 80 70 60 50 40 30 0 S D600N/ R S eries (400V to 2000V) RthJC (DC) = 0.1 K/ W S D600N/ R S eries (2500V to 3200V) RthJC (DC) = 0.1 K/ W Conduction Period 30° 60° 90° 120° 180° DC 800 1000 200 400 600 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Average Forward Current (A) Fig. 4 - Current Ratings Characteristics Document Number: 93551 Revision: 17-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD600N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 600 A Maximum Average Forward Power Loss (W) 800 Rt 04 0. A hS 700 600 500 400 300 200 100 0 0 180° 120° 90° 60° 30° 0. 08 W K/ = K/ W 02 0. W K/ 0. 1 K/ W ta el -D R Limit MS R 0.2 K/ W 0.4 K/ W Conduc tion Angle 0.6 K/ W S D600N/ R S eries (400V to 2000V) TJ = 180°C 100 200 300 400 500 1 K/ W 1.8 K/W 20 600 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Maximum Average F orward Power L (W) oss 1100 1000 900 800 700 600 500 RMS Limit 400 300 200 100 0 Conduction Period DC 180° 120° 90° 60° 30° R 0. 04 0. 08 0.1 K/ W 0.2 K/ W S D600N/ R S eries (400V to 2000V) TJ = 180°C 0 200 400 600 800 0.4 K/ W 0.6 K /W 1 K/ W 1.8 K/ W 20 1000 40 Maximum Allowable Ambient T emperature (°C) Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics th SA = K/ W K/ W 0. 02 K/ W -D el ta R 60 80 100 120 140 160 180 Maximum Average Forward Power Loss (W) 900 800 700 600 500 400 180° 120° 90° 60° 30° RMS Limit R = 0. 0. 04 02 K/ K/ W 0. W 06 -D K/ el W ta R 0.1 K/ W SA th 0.2 K/ W 300 200 100 Conduction Angle 0.4 K /W S D600N/ R S eries (2500V to 3200V) T = 150°C J 1 K/ W 0 0 100 200 300 400 500 25 600 50 75 100 125 150 Average Forward Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 7 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93551 Revision: 17-Apr-08 SD600N/R Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 600 A Maximum Average Forward Power Los (W) s 1100 1000 900 800 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period R 700 600 500 400 300 200 100 0 A= 0.0 0.0 2K 4K /W 0.0 / W 6K -D /W elt a 0.1 R K/ W th S 0.2 K/ W S D600N/ R S eries (2500V to 3200V) T = 150°C J 0.4 K / W 1 K/ W 25 0 100 200 300 400 500 600 700 800 900 50 75 100 125 150 Average Forward Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 8 - Forward Power Loss Characteristics 12000 10000 Peak Half S Wave Forward Current (A) ine 10000 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 180°C J @60 Hz 0.0083 s @50 Hz 0.0100 s Peak Half S Wave Forward Current (A) ine 8000 At Any R ated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 150°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 8000 6000 6000 4000 S D600N/ R S eries (2500V to 3200V) 2000 1 10 100 Number Of Eq ual Amplitude Half Cycle Current Pulses (N) 4000 S D600N/ R S eries (400V to 2000V) 1 10 100 2000 Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current 14000 12000 10000 8000 6000 4000 2000 0.01 Fig. 11 - Maximum Non-Repetitive Surge Current 12000 Peak Half S Wave Forward Current (A) ine Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Initial T = 180 °C J No Voltage Reapplied R ated VRRM Reapplied Peak Half S Wave Forward Current (A) ine 10000 Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Initial T = 150 °C J No Voltage Reapplied R ated VRRMReapplied 8000 6000 S D600N/ R Series (400V to 2000V) 0.1 1 4000 S D600N/ R S eries (2500V to 3200V) 0.1 Puls T e rain Duration (s) 1 2000 0.01 Pulse T rain Duration (s) Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current Document Number: 93551 Revision: 17-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD600N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 600 A 10000 Instantaneous Forward Current (A) T = 25°C J TJ= 180°C 10000 Ins tantaneous F orward Current (A) T = 25°C J T = 150°C J 1000 1000 S D600N/ R S eries (400V to 2000V) S D600N/ R S eries (2500V to 3200V) 100 100 0 1 2 3 4 Instantaneous Forward Voltage (V) Fig. 13 - Forward Voltage Drop Characteristics 1 0 1 2 3 4 5 Ins tantaneous Forward Voltage (V) Fig. 14 - Forward Voltage Drop Characteristics T ransient T hermal Impedanc e Z thJC (K/ W) 0.1 S teady S tate Value: RthJC = 0.1 K/ W (DC Operation) 0.01 S D600N/ R S eries 0.001 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) Fig. 15 - Thermal Impedance ZthJC Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93551 Revision: 17-Apr-08 SD600N/R Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 600 A ORDERING INFORMATION TABLE Device code SD 1 60 2 0 3 N 4 32 5 P 6 C 7 1 2 3 4 - Diode Essential part number 0 = Standard recovery N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 5 6 7 - Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base B-8 3/4" 16UNF-2A C = Ceramic cap For metric device M24 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95303 Document Number: 93551 Revision: 17-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors B-8 DIMENSIONS in millimeters (inches) Ceramic housing 26 (1.023) MAX. 10.5 (0.41) DIA. 5 (0.20) ± 0.3 (0.01) 12 (0.47) MIN. C.S. 70 mm2 245 (9.645) 255 (10.04) 38 (1.5) DIA. MAX. 115 (4.52) MIN. 47 (1.85) MAX. 80 (3.15) MAX. 27.5 (1.08) MAX. 21 (0.83) MAX. SW 45 3/4"-16UNF-2A * *For metric device: M24 x 1.5 - length 21 (0.83) MAX. contact factory Document Number: 95303 Revision: 11-Apr-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000