SD703C..L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
FEATURES
• • • • • • • • • • • •
700/790 A
DO-200AB (B-PUK)
High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 2500 V RoHS COMPLIANT High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 150 °C Lead (Pb)-free Designed and qualified for industrial level
PRODUCT SUMMARY
IF(AV)
TYPICAL APPLICATIONS
• Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
SD703C..L PARAMETER TEST CONDITIONS S20 700 IF(AV) IF(RMS) IFSM VRRM trr TJ 50 Hz 60 Hz Range 2.0 TJ 25 - 40 to 150 Ths 55 1320 9300 9730 1200 to 2500 3.0 S30 790 55 1470 9600 10 050 V µs °C A UNITS A °C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 12 SD703C..L 16 20 25 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1200 1600 2000 2500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1300 1700 2100 2600 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 93179 Revision: 14-May-08
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SD703C..L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
SD703C..L S20 700 (365) 55 (85) 1320 9300 9730 7820 Sinusoidal half wave, initial TJ = TJ maximum 8190 432 395 306 279 4320 1.00 1.11 0.80 0.76 2.20 S30 790 (400) 55 (85) 1470 9600 10 050 8070 8450 460 420 326 297 4600 0.95 1.05 0.60 mΩ rf2 VFM (I > π x IT(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 0.56 1.85 V kA2√s V kA2s A
FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied UNITS A °C
IF(AV) IF(RMS)
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop
RECOVERY CHARACTERISTICS
MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 2.0 3.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 150 °C
IFM
dI/dt (A/µs)
Vr (V)
trr AT 25 % IRRM (µs) 3.5 5.0
Qrr (µC) 240 380
Irr (A)
dir dt
trr t Qrr IRM(REC)
S20 S30
50
- 50
110 130
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, case junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ, TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 150 0.092 0.046 9800 (1000) 250 UNITS °C K/W N (kg) g
DO-200AB (B-PUK)
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Document Number: 93179 Revision: 14-May-08
SD703C..L Series
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION SINGLE SIDE 0.011 0.013 0.017 0.024 0.043 DOUBLE SIDE 0.011 0.014 0.017 0.025 0.043 RECTANGULAR CONDUCTION SINGLE SIDE 0.008 0.013 0.018 0.026 0.043 DOUBLE SIDE 0.008 0.013 0.018 0.026 0.044 TJ = TJ maximum K/W TEST CONDITIONS UNITS
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Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Maximum Allowable Heatsink T emperature (°C)
Maximum Allowable Heatsink T emperature (°C)
160 140 120 100 80 60 40
S D703C..S20L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.092 K/ W
160 140 120 100 80
S D703C..S 30L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.092 K/ W
Conduction Angle
Conduc tion Angle
30° 60 40 20 0 100 200
60°
90°
120°
180°
30° 20 0 100 200
60° 300
90°
120° 180° 500 600
400
300
400
500
600
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heats T ink emperature (°C)
160 140 120 100
Conduction Period
160 140 120 100
Conduc tion Period
S D703C..S 20L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.092 K/ W
S D703C..S 30L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.092 K/ W
80 60 40 20 0 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) 30° 60° 90° 120° 180° DC
80 60 40 20 0 0 200 400 600 800 1000 Average Forward Current (A) 30° 60°
90° 120° 180°
DC
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Document Number: 93179 Revision: 14-May-08
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SD703C..L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
Maximum Allowable Heatsink T emperature (°C) 160 140 120 100
Conduction Period
Maximum Allowable Heatsink T emperature (°C)
160 140 120 100
S D703C..S 20L S eries (Double S Cooled) ide RthJ-hs (DC) = 0.046 K/ W
S D703C..S 30L S eries (Double S ide Cooled) RthJ-hs (DC) = 0.046 K/ W
Conduction Angle
80 60 40 20 0 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) 30° 60°
80 30° 60 40 20 0 0 250 500 750 1000 1250 1500 Average Forward Current (A) 60° 90° 120° 180° DC
90°
120°
180°
Fig. 5 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Maximum Allowable Heatsink T emperature (°C)
140 120 100
S D703C..S 20L S eries (Double S ide Cooled) RthJ-hs (DC) = 0.046 K/ W
Maximum Average Forward Power Loss (W)
160
2500
2000
Conduction Period
1500
180° 120° 90° 60° 30°
RMS Limit
80 60 40 20 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) 30° 60° 90° 120° 180° DC
1000
Conduc tion Angle
500
S D703C..S 20L S eries TJ = 150°C 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A)
0
Fig. 6 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Maximum Allowable Heatsink T emperature (°C)
160 140 120 100
S D703C..S 30L Series (Double S ide Cooled) RthJ-hs (DC) = 0.046 K/ W
Maximum Average Forward Power Loss (W)
3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) DC 180° 120° 90° 60° 30°
RMS Limit
Conduc tion Angle
80 60 40 20 0 0 200 400 600 800 1000 Average Forward Current (A) 30° 60°
90° 120° 180°
Conduction Period
S D703C..S 20L S eries TJ = 150°C
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
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Document Number: 93179 Revision: 14-May-08
SD703C..L Series
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
Maximum Average Forward Power Loss (W)
Vishay High Power Products
Peak Half S Wave Forward Current (A) ine
2500 180° 120° 90° 60° 30° RMS Limit
10000
2000
8000
Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion. Initial T = 150°C J No Voltage Reapplied Rated VRRM Reapplied
1500
6000
1000
Conduction Angle
500
4000 S D703C..S 20L S eries 2000 0.01 0.1 Pulse T rain Duration (s) 1
S D703C..S 30L S eries T = 150°C J 0 200 400 600 800 1000
0 Average Forward Current (A)
Fig. 11 - Forward Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Maximum Average Forward Power Loss (W)
Peak Half S Wave F ine orward Current (A)
3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 Average Forward Current (A) DC 180° 120° 90° 60° 30° RMS Limit
9000 8000 7000 6000 5000 4000 3000
At Any Rated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 150 °C J @60 Hz 0.0083 s @50 Hz 0.0100 s
Conduction Period
S D703C..S 30L S eries T = 150°C J
S D703C..S 30L S eries 2000 1 10 100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 12 - Forward Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
10000 9000 8000 7000 6000 5000 4000 3000 2000 0.01 S D703C..S 30L S eries
Peak Half S Wave Forward Current (A) ine
Peak Half S Wave Forward Current (A) ine
9000
At Any Rated Load Condition And With Rated VRRM Applied Following S urge 8000 Initial T = 150 °C J @60 Hz 0.0083 s 7000 @50 Hz 0.0100 s 6000 5000 4000 3000 S D703C..S 20L S eries 2000 1 10 100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion. Initial T = 150°C J No Voltage Reapplied Rated VRRM Reapplied
0.1 Pulse T rain Duration (s)
1
Fig. 13 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Document Number: 93179 Revision: 14-May-08
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SD703C..L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
10000 Instantaneous Forward Current (A) T = 25°C J
10000
Instantaneous Forward Current (A)
T = 25°C J T = 150°C J 1000
T = 150°C J 1000
S D703C..S 20L S eries
S D703C..S 30L S eries
100 0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
100 0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
T ransient T hermal Impedance Z thJ-hs (K/ W)
0.1 S D703C..S S 20/ 30L S eries
0.01
S teady S tate Value R thJ-hs = 0.092 K/ W (S ingle S Cooled) ide R thJ-hs = 0.046 K/ W (Double S Cooled) ide (DC Operation)
0.001 0.001
0.01
0.1
1
10
100
S quare Wave Pulse Duration (s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
100
V
FP
100
T = 150°C J
I
V
FP
T = 150°C J
I
80 Forward Rec overy (V)
80 F orward Recovery (V)
60 T = 25°C J
60
40
40
T = 25°C J
20 S D703C..S 20L S eries 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us)
20 S D703C..S 30L S eries 0 0 400 800 1200 1600 2000 R ate Of R Of Forward Current - di/ dt (A/ us) ise
Fig. 20 - Typical Forward Recovery Characteristics
Fig. 21 - Typical Forward Recovery Characteristics
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Document Number: 93179 Revision: 14-May-08
SD703C..L Series
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
Maximum R everse Rec overy T ime - T (µs) rr 6 5.5 5 4.5 4 3.5 3 2.5 2 10
I FM = 1000 A S Pulse ine 500 A 150 A
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S D703C..S S 20L eries T = 150 °C; Vr > 100V J
Maximum Revers Rec overy T e ime - T (µs) rr
7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 10 100 1000
I FM = 1000 A S Pulse ine 500 A 150 A
S D703C..S S 30L eries T = 150 °C; V r > 100V J
100
1000
Rate Of Fall Of Forward Current - d i/ dt (A/ µs)
Rate Of Fa ll Of Forward Current - di/d t (A/ µs)
Fig. 22 - Recovery Time Characteristics
Fig. 25 - Recovery Time Characteristics
800 700 600 500 400
150 A 500 A I FM = 1000 A S ine Pulse
Maximum Revers R e ecovery Charge - Qrr (µC)
Maximum R everse Rec overy Charge - Qrr (A)
1100 1000 900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 S D703C..S 30L S eries T = 150 °C; Vr > 100V J
150 A 500 A I FM = 1000 A S Pulse ine
300 200 100 0 0 50 100 150 200 250 300 S D703C..S 20L S eries T = 150 °C; Vr > 100V J
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 23 - Recovery Charge Characteristics
Fig. 26 - Recovery Charge Characteristics
Maximum R everse Rec overy Current - Irr (A)
400 350 300 250 200 150 100 50 0 0
I FM = 1000 A S ine Pulse 500 A 150 A
Maximum Revers R e ecovery Current - Irr (A)
450
550 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 S D703C..S 30L S eries T = 150 °C; Vr > 100V J
I FM = 1000 A S ine Pulse 500 A 150 A
S D703C..S 20L S eries T = 150 °C; Vr > 100V J
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
Fig. 27 - Recovery Current Characteristics
Document Number: 93179 Revision: 14-May-08
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SD703C..L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
1E4
4 6 10 joules per pulse
1E4
Peak F orward Current (A)
0.6 0.4
Peak Forward Current (A)
1
2
100 50 Hz 400 200 1000 600 2000
1E3
0.2 0.1 0.08
S D703C..S 20L Series S inusoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs
1E3
4000 6000 10000 15000
3000
tp
tp
S D703C..S 20L S eries T rapezoidal Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us, d i/ d t = 300A/ us
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
Fig. 31 - Frequency Characteristics
Peak Forward Current (A)
Peak Forward Current (A)
2000 1000 600 400 200 3000 4000 6000
10 joules per pulse tp 6 4 2
100
50 Hz
1E3
10000 15000 tp 20000
S D703C..S 20L S eries S inusoid al Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us
1E3
1 0.6 0.4
S D703C..S 20L S eries 0.2 T pezoidal Pulse ra T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs, di/ dt = 100A/ µs
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
Peak Forward Current (A)
6 4 2 1
Peak Forward Current (A)
10 joules per pulse
1E3
0.6 0.4
0.8
1E3
2000 3000 4000 6000 10000 15000 20000
50 Hz 200 100 1000 400
tp
S D703C..S 20L S eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs d i/ d t = 300A/ µs
tp
S D703C..S 20L S eries T rapezoida l Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/ us, d i/ d t = 100A/ us
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 33 - Frequency Characteristics
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Document Number: 93179 Revision: 14-May-08
SD703C..L Series
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
1E4
10 joules per p ulse 46
Vishay High Power Products
1E4
Pea k Forward Current (A)
2 1 0.6 0.4
Peak F orward Current (A)
200 1500 1000 600 400
100 50 Hz
1E3
0.2 0.1
1E3
2000 3000 4000 6000 10000 tp
S D703C..S 30L Series T rapezoida l Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/ us, d i/ d t = 300A/ us
tp
S D703C..S 30L S eries S inusoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
Fig. 37 - Frequency Characteristics
1E4
Peak Forward Current (A)
1500 2000 3000
1000 400
200 100 50 Hz
Peak Forward Current (A)
10 joules per pulse 6 4 2 1
1E3
4000 6000 10000 15000 20000 tp
S D703C..S 30L S eries S inusoid al Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us
1E3
0.6 0.4
0.8
tp
1E2 1E1
1E2
1E3
1E4
1E2 1E1
S D703C..S 30L S eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs d i/ d t = 100A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E4
Peak Forward Current (A)
4 2
6
10 joules per pulse
Peak Forward Current (A)
1500 2000
200 100 50 Hz 1000 400
1E3
0.8 0.6 0.4
1
1E3
3000 4000 6000
S D703C..S 30L S eries T rapezoid al Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/ us, d i/ d t = 100A/ us
tp
S D703C..S 30L Series T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs, di/ dt = 300A/ µs
10000 tp 15000
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 39 - Frequency Characteristics
Document Number: 93179 Revision: 14-May-08
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SD703C..L Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Fast Recovery Diodes (Hockey PUK Version), 700/790 A
Device code
SD
1 1 2 3 4 5 6 7 -
70
2
3
3
C
4
25
5
S20
6
L
7
Diode Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code L = PUK case DO-200AB (B-PUK)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246
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Outline Dimensions
Vishay Semiconductors
DO-200AB (B-PUK)
DIMENSIONS in millimeters (inches)
3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends
58.5 (2.30) DIA. MAX.
0.8 (0.03) both ends
34 (1.34) DIA. MAX. 2 places
26.9 (1.06)
25.4 (1)
53 (2.09) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications)
Document Number: 95246 Revision: 05-Nov-07
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Revision: 12-Mar-12
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Document Number: 91000