SD823C20S20C

SD823C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 810/910 A FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics B-43 RoHS COMPLIANT • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK version case style B-43 • Maximum junction temperature 150 °C • Lead (Pb)-free • Designed and qualified for industrial level 810/910 A PRODUCT SUMMARY IF(AV) TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS SD823C..C S20 810 Ths 50 Hz 60 Hz Range 55 1500 9300 9730 1200 to 2500 2.0 TJ 25 - 40 to 150 S30 910 55 1690 9600 10 050 1200 to 2500 3.0 V µs °C A UNITS A °C IF(AV) IF(RMS) IFSM VRRM trr TJ ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 12 SD823C..C 16 20 25 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1200 1600 2000 2500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1300 1700 2100 2600 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93181 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD823C..C Series Vishay High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied SD823C..C S20 810 (425) 55 (85) 1500 9300 9730 7820 Sinusoidal half wave, initial TJ = TJ maximum 8190 432 395 306 279 4320 1.00 1.11 0.80 0.76 2.20 S30 910 (470) 55 (85) 1690 9600 10 050 8070 8450 460 420 326 297 4600 0.95 1.06 0.60 mΩ (I > π x IF(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum tp = 10 ms sinusoidal wave 0.57 1.85 V kA2√s V kA2s A UNITS A °C Fast Recovery Diodes (Hockey PUK Version), 810/910 A IF(AV) IF(RMS) t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 2.0 3.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 125 °C IFM dI/dt (A/µs) Vr (V) trr AT 25 % IRRM (µs) 3.5 5.0 Qrr (µC) 240 380 Irr (A) dir dt trr t Qrr IRM(REC) S20 S30 50 - 50 110 130 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, case junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ, TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 150 0.076 0.038 9800 (1000) 83 B-43 UNITS °C K/W N (kg) g www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93181 Revision: 14-May-08 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180° 120° 90° 60° 30° 0.007 0.008 0.010 0.015 0.026 DOUBLE SIDE 0.007 0.008 0.010 0.015 0.026 SINGLE SIDE 0.005 0.008 0.011 0.016 0.026 DOUBLE SIDE 0.005 0.008 0.011 0.016 0.026 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS Vishay High Power Products Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Maximum Allowable Heats T ink emperature (°C) 160 140 120 100 80 60 40 Maximum Allowable Heatsink Temperature (°C) S D823C..S 20C S eries (S ingle S Cooled) ide R thJ-hs (DC) = 0.076 K/ W 160 140 120 100 80 S D823C..S 30C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W Conduction Angle Conduction Angle 30° 60 40 20 0 100 200 300 60° 90° 120° 180° 60° 30° 90° 120° 180° 600 700 20 0 100 200 300 400 500 Average Forward Current (A) 400 500 600 700 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Ma ximum Allowable Heats T ink emperature (°C) 160 140 120 100 80 60 40 30° 20 0 200 400 600 60° 90° 120° Conduc tion Period Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 80 60 30° 40 20 0 0 200 400 600 800 1000 1200 Average Forward Current (A) 60° 90° 120° 180° DC Conduc tion Period S D823C..S 20C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W S D823C..S 30C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W 180° DC 800 1000 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Document Number: 93181 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD823C..C Series Vishay High Power Products Maximum Allowable Heatsink T emperature (°C) Fast Recovery Diodes (Hockey PUK Version), 810/910 A Maximum Allowable Hea ts T ink emperature (°C) 160 140 120 100 Conduc tion Period 160 140 120 100 S D823C..S 20C S eries (Double S ide Cooled) R thJ-hs (DC) = 0.038 K/ W S D823C..S 30C S eries (Double S Cooled) ide RthJ-hs (DC) = 0.038 K/ W Conduc tion Angle 80 60 40 20 30° 0 0 200 400 600 800 1000 Average Forward Current (A) 90° 120° 60° 180° 80 60 40 20 DC 0 0 400 800 1200 1600 2000 Average Forward Current (A) 30° 60° 90° 120° 180° Fig. 5 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics Maximum Allowable Heatsink T emperature (°C) 140 120 100 S D823C..S 20C S eries (Double S Cooled) ide RthJ-hs (DC) = 0.038 K/ W Maximum Average Forward Power Los (W) s 160 3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 Average Forward Current (A) 180° 120° 90° 60° 30° Conduction Period RMSLimit 80 60 40 20 30° 0 0 250 500 750 1000 1250 1500 Average Forward Current (A) 60° 90° 120° DC 180° Conduction Angle S D823C..S 20C S eries T = 150°C J Fig. 6 - Current Ratings Characteristics Fig. 9 - Forward Power Loss Characteristics Maximum Allowable Heats T ink emperature (°C) 140 120 100 S D823C..S 30C S eries (Double S Cooled) ide RthJ-hs (DC) = 0.038 K/ W Maximum Average Forward Power Loss (W) 160 3500 3000 2500 2000 1500 Conduc tion Period Conduction Angle DC 180° 120° 90° 60° 30° RMS Limit 80 60 40 20 30° 0 0 200 400 600 800 1000 1200 Average Forward Current (A) 60° 90° 120° 180° 1000 500 0 0 200 400 600 800 1000 1200 14001600 Average Forward Current (A) S D823C..S 20C S eries T = 150°C J Fig. 7 - Current Ratings Characteristics Fig. 10 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93181 Revision: 14-May-08 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A Maximum Average Forw ard Power Loss(W) Vishay High Power Products Peak Half Sine Wave Forward Current (A) 3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 Average Forward Current (A) 180° 120° 90° 60° 30° 10000 9000 8000 7000 6000 5000 4000 3000 Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion. Initial T = 150°C J No Voltage R eapplied Rated VRRM R eapplied RMS Limit Conduction Angle S D823C..S 30C S eries T = 150°C J S D823C..S 20C S eries 0.1 Pulse T rain Duration (s) 1 2000 0.01 Fig. 11 - Forward Power Loss Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current Maximum Average Forward Power Loss (W) Peak Half S Wave Forward Current (A) ine 3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 2000 Average Forward Current (A) Conduc tion Period 9000 8000 7000 6000 5000 4000 DC 180° 120° 90° 60° 30° At Any R ated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150 °C J @60 Hz 0.0083 s @50 Hz 0.0100 s RMS Limit S D823C..S 30C S eries T = 150°C J S D823C..S 30C S eries 3000 1 10 100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Fig. 12 - Forward Power Loss Characteristics Fig. 15 - Maximum Non-Repetitive Surge Current Peak Half S Wave Forward Current (A) ine Peak Half S Wave Forward Current (A) ine 9000 8000 7000 6000 5000 4000 3000 2000 1 At Any R ated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150 °C J @60 Hz 0.0083 s @50 Hz 0.0100 s 10000 9000 8000 7000 6000 5000 4000 3000 Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion. Initial T = 150°C J No Voltage Reapplied Rated VRRM Reapplied S D823C..S 20C S eries 10 100 S D823C..S 30C S eries 2000 0.01 0.1 Pulse T rain Duration (s) 1 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 16 - Maximum Non-Repetitive Surge Current Document Number: 93181 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD823C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 810/910 A 10000 Instantaneous Forward Current (A) T = 25°C J T = 150°C J 1000 10000 Instantaneous F orward Current (A) T = 25°C J T = 150°C J 1000 S D823C..S 20C S eries S D823C..S 30C S eries 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics T ransient T hermal Impedance ZthJ-hs (K/ W) 0.1 S D823C..S S 20/ 30C S eries 0.01 S teady S tate Value RthJ-hs = 0.076 K/ W (S ingle S ide Cooled) RthJ-hs = 0.038 K/ W (Double S ide Cooled ) (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 S quare Wave Pulse Duration (s) Fig. 19 - Thermal Impedance ZthJ-hs Characteristic 100 V FP 100 I T = 150°C J V FP I T = 150°C J 80 Forward Rec overy (V) 80 Forward Recovery (V) 60 60 40 T = 25°C J 40 T = 25°C J 20 S D823C..S 20C S eries 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us ) 20 S D823C..S 30C S eries 0 0 400 800 1200 1600 2000 R ate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93181 Revision: 14-May-08 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A Maximum R everse R overy T ec ime - T (µs rr ) Maximum R everse R overy T ec ime - T (µs) rr 6 5.5 5 4.5 4 3.5 3 2.5 2 10 IFM = 1000 A S Pulse ine 500 A 150 A Vishay High Power Products 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 10 100 1000 IFM = 1000 A S Pulse ine 500 A 150 A S D823C..S 20C S eries T = 150 °C; Vr > 100V J S D823C..S 30C S eries T = 150 °C; Vr > 100V J 100 1000 Rate Of Fa ll Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - d i/d t (A/ µs) Fig. 22 - Recovery Time Characteristics Fig. 25 - Recovery Time Characteristics Maximum R everse R overy Charg e - Qrr (µC) ec Maximum Reverse Recovery Charge - Qrr (µC) 800 IFM = 1000 A 1200 IFM = 1000 A 700 600 500 400 S Pulse ine 1000 800 S Pulse ine 500 A 500 A 600 150 A 150 A 300 200 100 0 0 50 100 150 200 250 300 S D823C..S 20C S eries T = 150 °C; Vr > 100V J 400 200 0 0 50 100 150 200 250 300 S D823C..S 30C S eries T = 150 °C; Vr > 100V J R ate Of Fall Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/dt (A/ µs) Fig. 23 - Recovery Charge Characteristics Fig. 26 - Recovery Charge Characteristics Maximum Reverse R overy Current - Irr (A) ec 400 350 300 250 200 150 100 50 0 0 I FM = 1000 A S Pulse ine 500 A 150 A Maximum Reverse Recovery Current - Irr (A) 450 550 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 S D823C..S 30C S eries T = 150 °C; Vr > 100V J I FM = 1000 A S ine Pulse 500 A 150 A S D823C..S 20C S eries T = 150 °C; Vr > 100V J 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - d i/ dt (A/ µs) Fig. 24 - Recovery Current Characteristics Fig. 27 - Recovery Current Characteristics Document Number: 93181 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD823C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 810/910 A 1E4 10 joules p er pulse 1E4 Peak Forward Current (A) 4 2 1 0.6 0.4 0.2 0.1 0.08 Peak Forward Current (A) 6 2000 1000 600 400 200 100 50 Hz 1E3 1E3 3000 4000 6000 10000 15000 tp 20000 S D823C..S 20C S eries T rapezoidal Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us, di/ dt = 300A/ us tp S D823C..S 20C S eries S inusoidal Pulse T = 150°C, VRRM = 800V J d v/ dt = 1000V/ µs 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 31 - Frequency Characteristics 1E4 2000 3000 4000 6000 1000 400 1E4 Peak Forward Current (A) 100 50 Hz Peak Forward Current (A) 200 S D823C..S 20C S eries T rapezoidal Pulse J T = 150°C, VRRM = 800V d v/ d t = 1000V/ µs d i/ d t = 100A/ µs tp 4 2 1 0.6 6 10 joules p er pulse 1E3 10000 15000 20000 tp S D823C..S 20C S eries S inusoidal Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us 1E3 0.4 0.2 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 29 - Frequency Characteristics Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 10 joules per pulse 1E4 Peak Forward Current (A) 6 4 2 Peak F orward Current (A) 1000 2000 3000 600 400 200 100 50 Hz 1E3 0.6 0.4 0.8 1 1E3 10000 15000 20000 4000 6000 tp S D823C..S 20C S eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs d i/ d t = 300A/ µs tp S D823C..S 20C S eries T rapezoidal Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/ us, d i/ d t = 100A/ us 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 33 - Frequency Characteristics www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 93181 Revision: 14-May-08 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A 1E4 46 1 0.6 0.4 2 10 joules p er p ulse Vishay High Power Products 1E4 Peak Forward Current (A) Peak F orward Current (A) 1000 1500 2000 600 400 200 100 50 Hz 1E3 0.2 0.1 S D823C..S 30C S eries S inusoid al Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs 1E3 3000 4000 6000 10000 15000 tp S D823C..S 30C S eries T rapezoidal Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us, d i/ d t = 300A/ us tp 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 37 - Frequency Characteristics 1E4 1000 400 200 100 50 Hz 1E4 Peak Forward Current (A) Peak Forward Current (A) 2000 10 joules per pulse 6 4 2 3000 4000 6000 1E3 10000 15000 20000 tp S D823C..S 30C S eries S inusoidal Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us 1E3 0.6 0.4 1 tp 1E2 1E1 1E2 1E3 1E4 1E2 1E1 S D823C..S 30C S eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs d i/ d t = 100A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 35 - Frequency Characteristics Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 10 joules p er pulse 6 4 2 1 0.8 0.6 0.4 S D823C..S 30C Series T rapezoida l Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs d i/ d t = 300A/ µs 1E4 1000 400 200 100 50 Hz Peak Forward Current (A) Peak Forward Current (A) 2000 3000 4000 6000 1E3 1E3 10000 15000 20000 tp S D823C..S 30C S eries S inusoidal Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us tp 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs ) Pulse Basewidth (µs) Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics Document Number: 93181 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 SD823C..C Series Vishay High Power Products ORDERING INFORMATION TABLE Fast Recovery Diodes (Hockey PUK Version), 810/910 A Device code SD 1 1 2 3 4 5 6 7 82 2 Diode 3 3 C 4 25 5 S20 6 C 7 Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code C = PUK case B-43 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95249 www.vishay.com 10 For technical questions, contact: ind-modules@vishay.com Document Number: 93181 Revision: 14-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1