SD853C..S50K Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 990 A
FEATURES
• High power FAST recovery diode series • 5.0 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics
DO-200AC (K-PUK)
RoHS
COMPLIANT
• Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AC (K-PUK) • Maximum junction temperature 125 °C • Lead (Pb)-free
PRODUCT SUMMARY
IF(AV) 990 A
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IF(AV) TEST CONDITIONS VALUES 990 Ths 55 1800 IF(RMS) Ths 50 Hz IFSM 60 Hz 50 Hz 60 Hz VRRM trr TJ Range 25 19 000 A 19 900 1810 1652 3000 to 4500 5.0 TJ 25 °C - 40 to 125 V µs kA2s UNITS A °C A °C
I2 t
Document Number: 93182 Revision: 14-May-08
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SD853C..S50K Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 30 SD853C..S50K 36 40 45 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 3000 3600 4000 4500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 3100 3700 4100 4600 100 IRRM MAXIMUM AT TJ = 125 °C mA
Fast Recovery Diodes (Hockey PUK Version), 990 A
FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 50 % VRRM reapplied No voltage reapplied 50 % VRRM reapplied VALUES 990 (420) 55 (85) 1800 19 000 19 900 16 000 Sinusoidal half wave, initial TJ = TJ maximum 16 750 1805 1645 1280 1165 18 050 1.50 1.67 0.70 mΩ (I > π x IF(AV)), TJ = TJ maximum Ipk = 2000 A, TJ = 125 °C; tp = 10 ms sinusoidal wave 0.65 2.90 V kA2√s V kA2s A UNITS A °C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop
RECOVERY CHARACTERISTICS
MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 5.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 125 °C Vr (V) - 50 trr AT 25 % IRRM (µs) 6.5 Qrr (µC) 1000 Irr (A) 270
IFM
trr t Qrr IRM(REC)
dI/dt (A/µs) 100
dir dt
S50
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Document Number: 93182 Revision: 14-May-08
SD853C..S50K Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg DC operation single side cooled RthJ-hs DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 °C - 40 to 150 0.04 K/W 0.02 22 250 (2250) 425 N (kg) g UNITS
DO-200AC (K-PUK)
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180° 120° 90° 60° 30° 0.0017 0.0021 0.0026 0.039 0.0067 DOUBLE SIDE 0.0019 0.0021 0.0027 0.0039 0.0067 SINGLE SIDE 0.0012 0.0021 0.0029 0.0041 0.0068 DOUBLE SIDE 0.0012 0.0021 0.0029 0.0041 0.0068 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93182 Revision: 14-May-08
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SD853C..S50K Series
Vishay High Power Products
Maximum Allowable Heatsink T emperature (°C)
Fast Recovery Diodes (Hockey PUK Version), 990 A
Maximum Allowable Heats T ink emperature (°C ) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 400 800 1200 1600 2000 Average Forward Current (A) 30° 60° 90° 120° 180° DC
Conduction Period
130 120 110 100 90 80 70 60
S D853C..S 50K S eries (S ingle S ide Cooled) R thJ-hs (DC) = 0.04 K/ W
S D853C..S 50K S eries (Double S ide Cooled) RthJ-hs (DC) = 0.02 K/ W
Conduction Angle
30° 50 40 0
60° 90°
180° 120°
100 200 300 400 500 600 700 800 Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink T emperature (°C)
130 120 110 100 90 80 70 60 50 40 30 20 0 200 400 600 800 1000 1200 Average Forward Current (A) 30° 60° 90° 120° 180° DC
Conduction Period
4000 3500 3000 2500 2000 1500
Conduction Angle
S D853C..S 50K S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.04 K/ W
180° 120° 90° 60° 30°
R Limit MS
1000 500 0 0 200 400 600 800 1000 1200 Average Forward Current (A) S D853C..S 50K S eries T = 125°C J
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Maximum Allowable Heatsink T emperature (°C)
120 110 100 90 80 70 60 50 40 30 0 200
S D853C..S 50K S eries (Double S ide Cooled) RthJ-hs (DC) = 0.02 K/ W
Maximum Average Forward Power Loss (W)
130
5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 2000 Average Forward Current (A)
Conduction Period
Conduction Angle
DC 180° 120° 90° 60° 30°
RMSLimit
30°
60°
90°
120° 180°
S D853C..S 50K S eries T = 125°C J
400
600
800
1000 1200
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
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Document Number: 93182 Revision: 14-May-08
SD853C..S50K Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A
Peak Half S Wave Forward Current (A) ine 18000
10000 Instantaneous F orward Current (A) T = 25°C J T = 125°C J
At Any Rated Load Condition And With 50% Rated VRRM Applied Following S urge 16000 Initial T = 125 °C J @60 Hz 0.0083 s 14000 @50 Hz 0.0100 s 12000 10000 8000 6000 4000 1 10 100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
1000
S D853C..S 50K S eries
S D853C..S 50K S eries
100 1 2 3 4 5 6 7 8 9 Instantaneous Forward Voltage (V)
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Peak Half S Wave F ine orward Current (A)
18000 16000 14000 12000 10000 8000 6000
T ransient T hermal Impedance Z
Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Initial T = 125°C J No Voltage Reapplied 50% Rated VRRM Reapplied
(K/ W)
20000
0.1 S D853C..S 50K S eries
thJ-hs
0.01
S teady S tate Value 0.001 RthJ-hs = 0.04 K/ W (S ingle S ide Cooled) RthJ-hs = 0.02 K/ W (Double S ide Cooled) (DC Operation) 0.0001 0.001 0.01 0.1 1 10 100
S D853C..S 50K S eries 0.1 Pulse T rain Duration (s) 1
4000 0.01
S quare Wave Pulse Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
300 250 F orward R overy (V) ec 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Rate Of Rise Of F orward Current - di/ dt (A/ us)
V
FP
I
T = 125°C J
T = 25°C J
S D853C..S 50K S eries
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93182 Revision: 14-May-08
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SD853C..S50K Series
Vishay High Power Products
Maximum Reverse Rec overy Time - T (µs) rr 10.5 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 4 10
Fast Recovery Diodes (Hockey PUK Version), 990 A
1E4
S D853C..S 50K S eries T = 125 °C; Vr > 100V J
Peak Forward Current (A)
2 1 0.8 0.6 0.4
4
6
10 joules p er pulse
I FM = 1500 A S Pulse ine 1000 A 500 A
1E3
0.2
S D853C..S 50K S eries S inusoid al Pulse TJ = 125°C, VRRM = 1500V d v/ d t = 1000V/ µs
tp
100
1000
1E2 1E1
1E2
1E3
1E4
R ate Of Fall Of Forward Current - di/ dt (A/ µs)
Pulse Basewidth (µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
Maximum Reverse R ecovery Charge - Qrr (µC)
2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 250 300 S D853C..S 50K S eries T = 125 °C; Vr > 100V J
500 A IFM = 1500 A S ine Pulse 1000 A
1E4
50 Hz 1000 600 400 200 100
Peak Forward Current (A)
1500 2000 3000
1E3
4000 6000
S D853C..S 50K S eries S inusoidal Pulse T = 55°C, VRRM = 1500V C dv/ dt = 1000V/ us
tp
10000
1E2 1E 1
1E 2
1E3
1E4
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Pulse Basewidth (µs)
Fig. 13 - Recovery Charge Characteristics
Fig. 16 - Frequency Characteristics
Maximum Reverse Recovery Current - Irr (A)
800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 S D853C..S 50K S eries T = 125 °C; Vr > 100V J
I FM = 1500 A S Pulse ine 1000 A 500 A
1E4
Peak Forward Current (A)
S D853C..S 50K S eries T rapezoidal Pulse T = 125°C, VRRM = 1500V J d v/ d t = 1000V/ µs d i/ d t = 300A/ µs
10 joules per pulse 6 tp 4 2 8
1E3
1 0.8 0.6 0.4
1E2 1E1
1E2
1E3
1E4
Rate Of Fall Of Forward Current - di/d t (A/µs)
Pulse Basewidth (µs)
Fig. 14 - Recovery Current Characteristics
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
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Document Number: 93182 Revision: 14-May-08
SD853C..S50K Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A
1E4
1E4
S D853C..S 50K S eries T rapezoidal Pulse T = 125°C, VRRM = 1500V J d v/ d t = 1000V/ µs d i/ d t = 100A/ µs
Peak Forward Current (A)
Peak F orward Current (A)
tp 200 400 600 1000 1500 2000 3000 4000 6000 10000 100
50 Hz
tp 6 10 joules per p ulse
4 2
1E3
1E3
1 0.8 0.6 0.4
S D853C..S 50K S eries T rapezoidal Pulse T = 55°C, VRRM = 1500V C d v/ dt = 1000V/ us, d i/ dt = 300A/ us
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 18 - Frequency Characteristics
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
Peak Forward Current (A)
1E3
3000 4000 6000 10000
2000
600 1000 1500
400
200
100
50 Hz
tp
1E2 1E1
S D853C..S 50K S eries T rapezoida l Pulse T = 55°C, VRRM = 1500V C d v/ dt = 1000V/ us, d i/ d t = 100A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 20 - Frequency Characteristics
Document Number: 93182 Revision: 14-May-08
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SD853C..S50K Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 990 A
ORDERING INFORMATION TABLE
Device code
SD
1
1 2 3 4 5 6 7
85
2 Diode
3
3
C
4
45
5
S50
6
K
7
Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code K = PUK case DO-200AC (K-PUK)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95247
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Document Number: 93182 Revision: 14-May-08
Outline Dimensions
Vishay Semiconductors
DO-200AC (K-PUK)
DIMENSIONS in millimeters (inches)
3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends
74.5 (2.93) DIA. MAX.
1 (0.04) MIN. both ends 27.5 (1.08) MAX.
47.5 (1.87) DIA. MAX. 2 places
67 (2.64) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications)
Document Number: 95247 Revision: 26-Nov-07
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
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Revision: 12-Mar-12
1
Document Number: 91000
