SD853C40S50K

SD853C..S50K Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 990 A FEATURES • High power FAST recovery diode series • 5.0 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics DO-200AC (K-PUK) RoHS COMPLIANT • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AC (K-PUK) • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY IF(AV) 990 A • Designed and qualified for industrial level TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) TEST CONDITIONS VALUES 990 Ths 55 1800 IF(RMS) Ths 50 Hz IFSM 60 Hz 50 Hz 60 Hz VRRM trr TJ Range 25 19 000 A 19 900 1810 1652 3000 to 4500 5.0 TJ 25 °C - 40 to 125 V µs kA2s UNITS A °C A °C I2 t Document Number: 93182 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD853C..S50K Series Vishay High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 30 SD853C..S50K 36 40 45 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 3000 3600 4000 4500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 3100 3700 4100 4600 100 IRRM MAXIMUM AT TJ = 125 °C mA Fast Recovery Diodes (Hockey PUK Version), 990 A FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 50 % VRRM reapplied No voltage reapplied 50 % VRRM reapplied VALUES 990 (420) 55 (85) 1800 19 000 19 900 16 000 Sinusoidal half wave, initial TJ = TJ maximum 16 750 1805 1645 1280 1165 18 050 1.50 1.67 0.70 mΩ (I > π x IF(AV)), TJ = TJ maximum Ipk = 2000 A, TJ = 125 °C; tp = 10 ms sinusoidal wave 0.65 2.90 V kA2√s V kA2s A UNITS A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 5.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 125 °C Vr (V) - 50 trr AT 25 % IRRM (µs) 6.5 Qrr (µC) 1000 Irr (A) 270 IFM trr t Qrr IRM(REC) dI/dt (A/µs) 100 dir dt S50 www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93182 Revision: 14-May-08 SD853C..S50K Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg DC operation single side cooled RthJ-hs DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 °C - 40 to 150 0.04 K/W 0.02 22 250 (2250) 425 N (kg) g UNITS DO-200AC (K-PUK) ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180° 120° 90° 60° 30° 0.0017 0.0021 0.0026 0.039 0.0067 DOUBLE SIDE 0.0019 0.0021 0.0027 0.0039 0.0067 SINGLE SIDE 0.0012 0.0021 0.0029 0.0041 0.0068 DOUBLE SIDE 0.0012 0.0021 0.0029 0.0041 0.0068 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93182 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD853C..S50K Series Vishay High Power Products Maximum Allowable Heatsink T emperature (°C) Fast Recovery Diodes (Hockey PUK Version), 990 A Maximum Allowable Heats T ink emperature (°C ) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 400 800 1200 1600 2000 Average Forward Current (A) 30° 60° 90° 120° 180° DC Conduction Period 130 120 110 100 90 80 70 60 S D853C..S 50K S eries (S ingle S ide Cooled) R thJ-hs (DC) = 0.04 K/ W S D853C..S 50K S eries (Double S ide Cooled) RthJ-hs (DC) = 0.02 K/ W Conduction Angle 30° 50 40 0 60° 90° 180° 120° 100 200 300 400 500 600 700 800 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink T emperature (°C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 400 600 800 1000 1200 Average Forward Current (A) 30° 60° 90° 120° 180° DC Conduction Period 4000 3500 3000 2500 2000 1500 Conduction Angle S D853C..S 50K S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.04 K/ W 180° 120° 90° 60° 30° R Limit MS 1000 500 0 0 200 400 600 800 1000 1200 Average Forward Current (A) S D853C..S 50K S eries T = 125°C J Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Maximum Allowable Heatsink T emperature (°C) 120 110 100 90 80 70 60 50 40 30 0 200 S D853C..S 50K S eries (Double S ide Cooled) RthJ-hs (DC) = 0.02 K/ W Maximum Average Forward Power Loss (W) 130 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 2000 Average Forward Current (A) Conduction Period Conduction Angle DC 180° 120° 90° 60° 30° RMSLimit 30° 60° 90° 120° 180° S D853C..S 50K S eries T = 125°C J 400 600 800 1000 1200 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93182 Revision: 14-May-08 SD853C..S50K Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A Peak Half S Wave Forward Current (A) ine 18000 10000 Instantaneous F orward Current (A) T = 25°C J T = 125°C J At Any Rated Load Condition And With 50% Rated VRRM Applied Following S urge 16000 Initial T = 125 °C J @60 Hz 0.0083 s 14000 @50 Hz 0.0100 s 12000 10000 8000 6000 4000 1 10 100 Number Of Equa l Amplitude Half Cyc le Current Pulses (N) 1000 S D853C..S 50K S eries S D853C..S 50K S eries 100 1 2 3 4 5 6 7 8 9 Instantaneous Forward Voltage (V) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - Forward Voltage Drop Characteristics Peak Half S Wave F ine orward Current (A) 18000 16000 14000 12000 10000 8000 6000 T ransient T hermal Impedance Z Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Initial T = 125°C J No Voltage Reapplied 50% Rated VRRM Reapplied (K/ W) 20000 0.1 S D853C..S 50K S eries thJ-hs 0.01 S teady S tate Value 0.001 RthJ-hs = 0.04 K/ W (S ingle S ide Cooled) RthJ-hs = 0.02 K/ W (Double S ide Cooled) (DC Operation) 0.0001 0.001 0.01 0.1 1 10 100 S D853C..S 50K S eries 0.1 Pulse T rain Duration (s) 1 4000 0.01 S quare Wave Pulse Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 300 250 F orward R overy (V) ec 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Rate Of Rise Of F orward Current - di/ dt (A/ us) V FP I T = 125°C J T = 25°C J S D853C..S 50K S eries Fig. 11 - Typical Forward Recovery Characteristics Document Number: 93182 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD853C..S50K Series Vishay High Power Products Maximum Reverse Rec overy Time - T (µs) rr 10.5 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 4 10 Fast Recovery Diodes (Hockey PUK Version), 990 A 1E4 S D853C..S 50K S eries T = 125 °C; Vr > 100V J Peak Forward Current (A) 2 1 0.8 0.6 0.4 4 6 10 joules p er pulse I FM = 1500 A S Pulse ine 1000 A 500 A 1E3 0.2 S D853C..S 50K S eries S inusoid al Pulse TJ = 125°C, VRRM = 1500V d v/ d t = 1000V/ µs tp 100 1000 1E2 1E1 1E2 1E3 1E4 R ate Of Fall Of Forward Current - di/ dt (A/ µs) Pulse Basewidth (µs) Fig. 12 - Recovery Time Characteristics Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Maximum Reverse R ecovery Charge - Qrr (µC) 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 250 300 S D853C..S 50K S eries T = 125 °C; Vr > 100V J 500 A IFM = 1500 A S ine Pulse 1000 A 1E4 50 Hz 1000 600 400 200 100 Peak Forward Current (A) 1500 2000 3000 1E3 4000 6000 S D853C..S 50K S eries S inusoidal Pulse T = 55°C, VRRM = 1500V C dv/ dt = 1000V/ us tp 10000 1E2 1E 1 1E 2 1E3 1E4 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Pulse Basewidth (µs) Fig. 13 - Recovery Charge Characteristics Fig. 16 - Frequency Characteristics Maximum Reverse Recovery Current - Irr (A) 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 S D853C..S 50K S eries T = 125 °C; Vr > 100V J I FM = 1500 A S Pulse ine 1000 A 500 A 1E4 Peak Forward Current (A) S D853C..S 50K S eries T rapezoidal Pulse T = 125°C, VRRM = 1500V J d v/ d t = 1000V/ µs d i/ d t = 300A/ µs 10 joules per pulse 6 tp 4 2 8 1E3 1 0.8 0.6 0.4 1E2 1E1 1E2 1E3 1E4 Rate Of Fall Of Forward Current - di/d t (A/µs) Pulse Basewidth (µs) Fig. 14 - Recovery Current Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93182 Revision: 14-May-08 SD853C..S50K Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A 1E4 1E4 S D853C..S 50K S eries T rapezoidal Pulse T = 125°C, VRRM = 1500V J d v/ d t = 1000V/ µs d i/ d t = 100A/ µs Peak Forward Current (A) Peak F orward Current (A) tp 200 400 600 1000 1500 2000 3000 4000 6000 10000 100 50 Hz tp 6 10 joules per p ulse 4 2 1E3 1E3 1 0.8 0.6 0.4 S D853C..S 50K S eries T rapezoidal Pulse T = 55°C, VRRM = 1500V C d v/ dt = 1000V/ us, d i/ dt = 300A/ us 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 Peak Forward Current (A) 1E3 3000 4000 6000 10000 2000 600 1000 1500 400 200 100 50 Hz tp 1E2 1E1 S D853C..S 50K S eries T rapezoida l Pulse T = 55°C, VRRM = 1500V C d v/ dt = 1000V/ us, d i/ d t = 100A/ us 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 20 - Frequency Characteristics Document Number: 93182 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD853C..S50K Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 990 A ORDERING INFORMATION TABLE Device code SD 1 1 2 3 4 5 6 7 85 2 Diode 3 3 C 4 45 5 S50 6 K 7 Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code K = PUK case DO-200AC (K-PUK) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95247 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 93182 Revision: 14-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1