SFH615AGR-X007

VISHAY SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO = 70 V • Low Saturation Voltage • Fast Switching Times • Temperature Stable • Low Coupling Capacitance • End-Stackable, .100 " (2.54 mm) Spacing • High Common-mode Interference Immunity (Unconnected Base) A1 C i179060 4 3 C E 2 Order Information Part SFH615AA SFH615AB SFH615ABL SFH615ABM SFH615AGB SFH615AGR Remarks CTR 50 - 600 %, DIP-4 CTR 80 - 260 %, DIP-4 CTR 200 - 600 %, DIP-4 CTR 200 - 400 %, DIP-4 CTR 100 - 600 %, DIP-4 CTR 100 - 300 %, DIP-4 CTR 50 - 150 %, DIP-4 CTR 50 - 600 %, DIP-4 400 mil (option 6) CTR 50 - 600 %, SMD-4 (option 7) CTR 200 - 400 %, DIP-4 400 mil (option 6) CTR 200 - 400 %, SMD-4 (option 7) CTR 100 - 600 %, DIP-4 400 mil (option 6) CTR 100 - 600 %, SMD-4 (option 9) CTR 100 - 300 %, DIP-4 400 mil (option 6) CTR 100 - 300 %, SMD-4 (option 7) CTR 50 - 150 %, DIP-4 400 mil (option 6) CTR 50 - 150 %, SMD-4 (option 8) CTR 50 - 150 %, SMD-4 (option 9) Agency Approvals • UL - File No. E52744 System Code H or J • DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Description The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8 mm are achieved with option 6. This version complies with 60950 (DIN VDE 0805) for reinforced insulation up to operation voltage of 400 VRMS or DC. SFH615AY SFH615AA-X006 SFH615AA-X007 SFH615ABM-X006 SFH615ABM-X007 SFH615AGB-X006 SFH615AGB-X009 SFH615AGR-X006 SFH615AGR-X007 SFH615AY-X006 SFH615AY-X008 SFH615AY-X009 For additional information on the available options refer to Option Information. Document Number 83672 Rev. 1.4, 19-Apr-04 www.vishay.com 1 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC Forward current Surge forward current Power dissipation tp ≤ 1.0 ms Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW Output Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp ≤ 1.0 ms Total power dissipation Test condition Symbol VEC VCE IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage between emitter and detector, refer to climate DIN 40046 part 2, Nov.74 Creepage Clearance Insulation thickness between emitter and detector comparative tracking index per DIN IEC 112/VDEO 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s. dip soldering distance to seating plane ≥ 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 Unit VRMS ≥ 7.0 ≥ 7.0 ≥ 175 mm mm ≥ 1012 ≥ 10 11 Ω Ω °C °C °C °C - 55 to + 150 - 55 to + 100 100 260 www.vishay.com 2 Document Number 83672 Rev. 1.4, 19-Apr-04 VISHAY SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 60 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO Rthja Min Typ. 1.25 0.01 13 750 Max 1.65 10 Unit V µA pF K/W Output Parameter Collector-emitter capacitance Thermal resistance Test condition VCE = 5 V, f = 1.0 MHz Symbol CCE Rthja Min Typ. 5.2 500 Max Unit pF K/W Coupler Parameter Collector-emitter saturation voltage Coupling capacitance Collector-emitter leakage current VCEO = 10 V SFH615AA SFH615AGB SFH615AGR SFH615ABM SFH615ABL SFH615AY SFH615AB Test condition IF = 10 mA, IC = 2.5 mA Part Symbol VCEsat CC ICEO ICEO ICEO ICEO ICEO ICEO ICEO Min Typ. 0.25 0.4 10 10 10 10 10 10 10 100 100 100 100 100 100 100 Max 0.4 Unit V pF nA nA nA nA nA nA nA Current Transfer Ratio Parameter IC/IF Test condition IF = 5.0 mA, VCE = 5.0 V Part SFH615AA SFH615AGB SFH615AGR SFH615ABM SFH615ABL SFH615AY SFH615AB Symbol CTR CTR CTR CTR CTR CTR CTR Min 50 100 100 200 200 50 80 Typ. Max 600 600 300 400 600 150 260 Unit % % % % % % % Document Number 83672 Rev. 1.4, 19-Apr-04 www.vishay.com 3 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Switching Characteristics Parameter Turn-on time Turn-off time Test condition IF = 5.0 mA IF = 5.0 mA Symbol ton toff Min Typ. 2.0 25 Max VISHAY Unit µs µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) f = 1.0 MHz IF 1Ω VCC = 5 V 47 Ω isfh615aa_01 isfh615aa_03 Fig. 1 Switching Operation (with Saturation) Fig. 3 Transistor Capacitance (typ.) vs. Collector-Emitter Voltage IF = 10 mA, VCC = 5.0 V isfh615aa_02 isfh615aa_04 Fig. 2 Current Transfer Ratio (typical) vs. Temperature Fig. 4 Permissible Diode Forward Current vs. Ambient Temperature www.vishay.com 4 Document Number 83672 Rev. 1.4, 19-Apr-04 VISHAY SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors isfh615aa_05 isfh615aa_08 Fig. 5 Output Characteristics (typ.) Collector Current vs. Collector-Emitter Voltage Fig. 8 Permissible Power Dissipation vs. Temperature Pulse cycle D = parameter, isfh615aa_06 Fig. 6 Permissible Pulse Handling Capability Forward Current vs. Pulse Width isfh615aa_07 Fig. 7 Diode Forward Voltage (typ.) vs. Forward Current Document Number 83672 Rev. 1.4, 19-Apr-04 www.vishay.com 5 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Package Dimensions in Inches (mm) VISHAY 2 1 pin one ID .255 (6.48) .268 (6.81) ISO Method A 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4° typ. .018 (.46) .022 (.56) 10° .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3°–9° .300 (7.62) typ. .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) i178027 .008 (.20) .012 (.30) Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . .180 (4.6) .160 (4.1) .315 (8.0) MIN. .400 (10.16) .430 (10.92) .014 (0.35) .010 (0.25) .331 (8.4) MIN. .406 (10.3) MAX. Option 8 .300 (7.62) TYP. .020 (0.50) .000 (0.00) .150 (3.81) .130 (3.30) .365 (9.27) MIN. .472 (12.00) MAX. .375 (9.53) .395 (10.03) .300 (7.62)ref. Option 9 0040 (.102) 0098 (.249) .012 (.30) typ. .020 (.51) .040 (1.02) 18486 .315 (8.00) min. 15° max. www.vishay.com 6 Document Number 83672 Rev. 1.4, 19-Apr-04 VISHAY SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83672 Rev. 1.4, 19-Apr-04 www.vishay.com 7