SI1012CR

Si1012CR Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V ID (A) 0.5 0.2 0.2 0.75 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Gate-Source ESD Protected: 1000 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits SC-75A G 1 Marking Code K 3 D XX YY Lot Traceability and Date Code S 2 Top View Part # Code Ordering Information: Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 ±8 0.63a, b 0.5a, b 2 0.2a, b 0.24a, b 0.15a, b - 55 to 150 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. t 5 s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 67519 S11-0449-Rev. A, 07-Mar-11 www.vishay.com 1 Si1012CR Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf ISM VSD trr Qrr ta tb IF = 0.5 A, dI/dt = 100 A/µs IS = 0.5 A 0.8 10 2 5 5 VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  f = 1 MHz 2.4 VDS = 10 V, VGS = 8 V, ID = 0.6 A VDS = 10 V, VGS = 4.5 V, ID = 0.6 A VDS = 10 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 0 V, VGS = ± 4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS =  5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.6 A Drain-Source On-State Resistancea Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 2 1.2 15 4 ns A V nC 43 14 8 1.3 0.75 0.15 0.13 12.2 11 16 26 11 24.4 20 24 39 20 ns  2 1.2 nC pF VGS = 2.5 V, ID = 0.3 A VGS = 1.8 V, ID = 0.3 A VDS = 10 V, ID = 0.5 A 2 0.330 0.380 0.420 7.5 0.396 0.456 0.546 S  0.4 20 17 - 1.8 1.0 ± 30 ±1 1 10 A µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67519 S11-0449-Rev. A, 07-Mar-11 Si1012CR Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 1.0E-04 1.0E-05 IGSS - Gate Current (mA) 0.6 IGSS - Gate Current (A) TJ = 150 °C 1.0E-06 TJ = 25 °C 0.4 TJ = 25 °C 1.0E-07 0.2 1.0E-08 0 0 2 4 6 8 10 12 14 1.0E-09 0 4 7 11 14 VGS - Gate-to-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 2 0.5 Gate Current vs. Gate-Source Voltage VGS = 5 V thru 2 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 0.4 0.3 TC = 25 °C 0.2 VGS = 1.5 V 1 0.5 0.1 VGS = 1 V 0 0 0.5 1 1.5 2 0 0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = - 55 °C Output Characteristics 0.80 60 Transfer Characteristics RDS(on) - On-Resistance (Ω) VGS = 1.8 V 0.60 C - Capacitance (pF) Ciss 45 30 Coss 15 VGS = 2.5 V 0.40 VGS = 4.5 V Crss 0.20 0 0.5 1 ID - Drain Current (A) 1.5 2 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 67519 S11-0449-Rev. A, 07-Mar-11 www.vishay.com 3 Si1012CR Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 ID = 0.6 A VGS - Gate-to-Source Voltage (V) VDS = 5 V VDS = 10 V RDS(on) - On-Resistance (Normalized) 6 1.4 1.6 ID = 0.5 A VGS = 4.5 V 1.2 4 VDS = 16 V 2 1.0 0.8 VGS = 2.5 V 0 0 0.5 1 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 10 0.8 On-Resistance vs. Junction Temperature ID = 0.5 A RDS(on) - On-Resistance (Ω) 0.6 IS - Source Current (A) TJ = 150 °C 1 0.4 TJ = 125 °C TJ = 25 °C TJ = 25 °C 0.2 0.1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.75 ID = 250 μA 2.4 0.65 1.8 3 On-Resistance vs. Gate-to-Source Voltage 0.55 Power (W) VGS(th) (V) 1.2 0.45 0.6 0.35 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com 4 Document Number: 67519 S11-0449-Rev. A, 07-Mar-11 Si1012CR Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.24 Limited by R DS(on)* ID - Drain Current (A) 1 BVDSS Limited 0.18 1 ms 10 ms 0.1 100 ms TC = 25 °C Single Pulse 0.01 0.1 1 10 Power (W) 0.12 0.06 1s 10 s, DC 100 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.02 2. Per Unit Base = RthJA = 650 °C/W Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67519. Document Number: 67519 S11-0449-Rev. A, 07-Mar-11 www.vishay.com 5 Package Information www.vishay.com SC-75A: 3-LEADS L2 D e2 B1(b1) 1 2 Vishay Siliconix D A 2X e1 3 E/2 1 2 E1 E 1 1 bbb 1 2 D C B B 2X bbb C 3 4 B e3 D D 2X B1 b1 With Tin Planting c1 Base Metal A2 2XB1 ddd M C A– B Section B-B 5 A D C 4X Seating Plane A1 D Notes Dimensions in millimeters will govern. 1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interelead flash, but including any mismatch between the top and bottom of the plastic body. 3. Datums A, B and D to be determined 0.10 mm from the lead tip. 4. Terminal positions are shown for reference only. 5. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. MILLIMETERS DIM. A A1 A2 B1 b1 c c1 D E E1 e1 e2 e3 L L1 L2  1 0° 4° 0.15 MIN. 0.00 0.65 0.19 0.17 0.13 0.10 1.48 1.50 0.66 NOM. 0.70 1.575 1.60 0.76 0.50 BSC 1.00 BSC 0.50 BSC 0.205 0.40 REF 0.15 BSC 8° 10° 0.30 MAX. 0.80 0.10 0.80 0.24 0.21 0.15 0.12 1.68 1.70 0.86 1, 2 5 5 1, 2 5 NOTE DIMENSIONS aaa bbb ccc ddd TOLERANCES 0.10 0.10 0.10 0.10 ECN: E11-2210-Rev. D, 08-Aug-11 DWG: 5868 Revision: 08-Aug-11 1 Document Number: 71348 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C L1 3 L D bbb D 3 bbb Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 (0.356) (1.803) 0.071 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.503) 0.020 (0.798) 0.031 APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1