SI1012R_10

Si1012R/X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • Gate-Source ESD Protected: 2000 V • High-Side Switching • Low On-Resistance: 0.7  • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • Compliant to RoHS Directive 2002/95/EC SC-75A or SC-89 G 1 APPLICATIONS 3 D S 2 Top View • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers BENEFITS ORDERING INFORMATION Part Number Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) Package SC-75A (SOT-416) SC-89 (SOT-490) Marking Code C A • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Maximum Power Dissipationb for SC-75 Maximum Power Dissipation for SC-89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board. b Symbol VDS VGS TA = 25 °C TA = 85 °C ID IDM IS TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C TJ, Tstg ESD PD 5s 20 ±6 600 400 1000 275 175 90 275 160 Steady State Unit V 500 350 250 150 80 250 140 - 55 to 150 2000 °C V mW mA Document Number: 71166 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 1 Si1012R/X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Symbol VGS(th) IGSS IDSS ID(on) a Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 350 mA VDS = 10 V, ID = 400 mA IS = 150 mA, VGS = 0 V Min. 0.45 Typ. Max. 0.9 Unit V µA nA µA mA ± 0.5 0.3 700 0.41 0.53 0.70 1.0 0.8 750 ± 1.0 100 5 0.70 0.85 1.25 S 1.2 V  Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time RDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDS = 10 V, VGS = 4.5 V, ID = 250 mA 75 225 5 pC VDD = 10 V, RL = 47  ID  200 mA, VGEN = 4.5 V, Rg = 10  5 25 11 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71166 S10-2432-Rev. D, 25-Oct-10 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 VGS = 5 V thru 1.8 V 0.8 ID - Drain Current (A) ID - Drain Current (mA) 1200 TC = - 55 °C 1000 25 °C 800 125 °C 600 0.6 0.4 400 0.2 1V 0.0 0.0 200 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 100 Transfer Characteristics RDS(on) - On-Resistance (Ω) 3.2 C - Capacitance (pF) 80 Ciss 60 2.4 1.6 VGS = 1.8 V 0.8 VGS = 2.5 V VGS = 4.5 V 0.0 0 200 400 600 800 1000 40 Coss 20 0 0 Crss 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA 4 R DS(on) - On-Resistance (Normalized) 1.40 1.60 Capacitance VGS = 4.5 V ID = 600 mA 3 1.20 VGS = 1.8 V ID = 350 mA 1.00 2 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71166 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 3 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 TJ = 125 °C RDS(on) - On-Resistance (Ω) 4 ID = 350 mA 3 ID = 200 mA 2 I S - Source Current (mA) 5 100 TJ = 25 °C TJ = - 55 °C 10 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.3 3.0 On-Resistance vs. Gate-to-Source Voltage 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (µA) 2.5 2.0 0 1.5 - 0.1 1.0 VGS = 4.5 V - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature www.vishay.com 4 Document Number: 71166 S10-2432-Rev. D, 25-Oct-10 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 833 °C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71166. Document Number: 71166 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 5 Package Information www.vishay.com SC-75A: 3-LEADS L2 D e2 B1(b1) 1 2 Vishay Siliconix D A 2X e1 3 E/2 1 2 E1 E 1 1 bbb 1 2 D C B B 2X bbb C 3 4 B e3 D D 2X B1 b1 With Tin Planting c1 Base Metal A2 2XB1 ddd M C A– B Section B-B 5 A D C 4X Seating Plane A1 D Notes Dimensions in millimeters will govern. 1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interelead flash, but including any mismatch between the top and bottom of the plastic body. 3. Datums A, B and D to be determined 0.10 mm from the lead tip. 4. Terminal positions are shown for reference only. 5. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. MILLIMETERS DIM. A A1 A2 B1 b1 c c1 D E E1 e1 e2 e3 L L1 L2  1 0° 4° 0.15 MIN. 0.00 0.65 0.19 0.17 0.13 0.10 1.48 1.50 0.66 NOM. 0.70 1.575 1.60 0.76 0.50 BSC 1.00 BSC 0.50 BSC 0.205 0.40 REF 0.15 BSC 8° 10° 0.30 MAX. 0.80 0.10 0.80 0.24 0.21 0.15 0.12 1.68 1.70 0.86 1, 2 5 5 1, 2 5 NOTE DIMENSIONS aaa bbb ccc ddd TOLERANCES 0.10 0.10 0.10 0.10 ECN: E11-2210-Rev. D, 08-Aug-11 DWG: 5868 Revision: 08-Aug-11 1 Document Number: 71348 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C L1 3 L D bbb D 3 bbb Package Information Vishay Siliconix SC89 3 X E D A C H L 3 DETAIL X MILLIMETERS Dim A b 1 2 INCHES Min 0.024 0.009 0.004 0.059 0.030 Min 0.60 0.23 0.10 1.50 0.75 Max 0.80 0.33 0.20 1.70 0.95 Max 0.031 0.013 0.008 0.067 0.037 e1 e b C D E e e1 H L 1.00 BSC 0.50 BSC 1.50 0.30 1.70 0.50 0.040 BSC 0.020 BSC 0.059 0.012 0.067 0.020 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5869 Document Number: 71377 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 (0.356) (1.803) 0.071 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.503) 0.020 (0.798) 0.031 APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD 0.0200 (0.51) ) 0.0150 (0.38 ) ) (1.75 ) ) 0.0690 0.0170 0.0250 (0.64) ) 0.0550 (1.40 ) ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.0260 0.0150 (0.38 ) ) Return to Index Return to Index APPLICATION NOTE www.vishay.com 20 (0.66 ) ) (0.43 ) ) Document Number: 72604 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1