SI1012X-T1-E3

Si1012R/X Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350 FEATURES • • • • • • • Halogen-free Option Available TrenchFET® Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 Ω Low Threshold: 0.8 V (typ.) Fast Switching Speed: 10 ns RoHS COMPLIANT SC-75A or SC-89 APPLICATIONS G 1 3 D S 2 Top View • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers BENEFITS • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ORDERING INFORMATION Part Number Si1012R-T1-E3 (Lead (Pb)-free) Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) Si1012X-T1-E3 (Lead (Pb)-free) Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) Package SC-75A (SOT-416) SC-89 (SOT-490) Marking Code C A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Maximum Power Dissipationb for SC-75 Maximum Power Dissipation for SC-89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. b Symbol VDS VGS TA = 25 °C TA = 85 °C ID IDM IS TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C TJ, Tstg ESD PD 5s 20 ±6 600 400 1000 275 175 90 275 160 Steady State Unit V 500 350 250 150 80 250 140 - 55 to 150 2000 °C V mW mA Document Number: 71166 S-81543-Rev. C, 07-Jul-08 www.vishay.com 1 Si1012R/X Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Symbol VGS(th) IGSS IDSS ID(on) a Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 350 mA VDS = 10 V, ID = 400 mA IS = 150 mA, VGS = 0 V Min. 0.45 Typ. Max. 0.9 Unit V µA nA µA mA ± 0.5 0.3 700 0.41 0.53 0.70 1.0 0.8 750 ± 1.0 100 5 0.70 0.85 1.25 S 1.2 V Ω Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time RDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDS = 10 V, VGS = 4.5 V, ID = 250 mA 75 225 5 pC VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω 5 25 11 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71166 S-81543-Rev. C, 07-Jul-08 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS 1.0 TA = 25 °C, unless otherwise noted 1200 TC = - 55 °C 0.8 ID - Drain Current (A) 1000 VGS = 5 thru 1.8 V ID - Drain Current (mA) 800 125 °C 600 25 °C 0.6 0.4 400 0.2 1V 0.0 0.0 200 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 100 Transfer Characteristics RDS(on) - On-Resistance (Ω) 3.2 C - Capacitance (pF) 80 Ciss 60 2.4 1.6 VGS = 1.8 V 0.8 VGS = 2.5 V VGS = 4.5 V 0.0 0 200 400 600 800 1000 40 Coss 20 0 0 Crss 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA 4 R DS(on) - On-Resistance (Normalized) 1.40 1.60 Capacitance VGS = 4.5 V ID = 600 mA 3 1.20 VGS = 1.8 V ID = 350 mA 1.00 2 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71166 S-81543-Rev. C, 07-Jul-08 www.vishay.com 3 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1000 TJ = 125 °C RDS(on) - On-Resistance (Ω) 4 ID = 350 mA 3 ID = 200 mA 2 I S - Source Current (mA) 5 100 TJ = 25 °C TJ = - 55 °C 10 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.3 3.0 On-Resistance vs. Gate-to-Source Voltage 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (µA) 2.5 2.0 0 1.5 - 0.1 1.0 VGS = 4.5 V - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature www.vishay.com 4 Document Number: 71166 S-81543-Rev. C, 07-Jul-08 Si1012R/X Vishay Semiconductors TYPICAL CHARACTERISTICS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 TA = 25 °C, unless otherwise noted 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 833 °C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71166. Document Number: 71166 S-81543-Rev. C, 07-Jul-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1