SI1012X

Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V ID (mA) 600 500 350 FEATURES D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A or SC-89 G 1 Ordering Information: SC-75A (SOT– 416): Si1012R–Marking Code : C SC-89 (SOT– 490): Si1012X–Marking Code: A Top View 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 TA = 25_C TA = 85_C TA = 25_C for SC-89 TA = 85_C TJ, Tstg ESD PD TA = 25_C TA = 85_C Symbol VDS VGS 5 secs 20 Steady State Unit V "6 600 500 350 1000 275 175 90 275 160 –55 to 150 2000 250 150 80 250 140 ID 400 IDM IS mA mW Maximum Power Dissipationb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board. Document Number: 71166 S-02464—Rev. A, 25-Oct-00 _C V www.vishay.com 1 Si1012R/X Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 600 mA Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 500 m A VGS = 1.8 V, ID = 350 m A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 400 mA IS = 150 mA, VGS = 0 V 700 0.41 0.53 0.70 1.0 0.8 1.2 0.70 0.85 1.25 S V W 0.45 "0.5 0.3 "1.0 100 5 V mA nA mA mA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 47 W 10 47 ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W VDS = 10 V, VGS = 4.5 V, ID = 250 mA 750 75 225 5 5 25 11 ns pC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 1.0 1200 Transfer Characteristics TC = –55_C 0.8 I D – Drain Current (A) 1000 ID - Drain Current (mA) VGS = 5 thru 1.8 V 25_C 800 125_C 600 0.6 0.4 400 0.2 1V 0.0 0.0 200 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71166 S-02464—Rev. A, 25-Oct-00 Si1012R/X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) On-Resistance vs. Drain Current 4.0 r DS(on) – On-Resistance ( W ) 100 Vishay Siliconix Capacitance C – Capacitance (pF) 3.2 80 Ciss 60 2.4 1.6 VGS = 1.8 V 0.8 VGS = 2.5 V VGS = 4.5 V 0.0 0 200 400 600 800 1000 40 Coss 20 0 0 Crss 4 8 12 16 20 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA 4 1.60 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance (W) (Normalized) 1.40 VGS = 4.5 V ID = 600 mA 3 1.20 VGS = 1.8 V ID = 350 mA 1.00 2 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 –50 –25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 1000 TJ = 125_C r DS(on) – On-Resistance ( W ) I S – Source Current (mA) 4 5 On-Resistance vs. Gate-to-Source Voltage ID = 350 mA 3 ID = 200 mA 2 100 TJ = 25_C 10 TJ = –55_C 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71166 S-02464—Rev. A, 25-Oct-00 www.vishay.com 3 Si1012R/X Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS – (mA) 2.5 2.0 –0.0 1.5 –0.1 1.0 VGS = 4.5 V –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 125 0.0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) TJ – Temperature (_C) BVGSS vs. Temperature BVGSS – Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 833_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71166 S-02464—Rev. A, 25-Oct-00 Si1012R/X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71166 S-02464—Rev. A, 25-Oct-00 www.vishay.com 5