SI1013X

Si1013R/X New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V ID (mA) –350 –300 –150 FEATURES D D D D D D High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A or SC-89 G 1 Ordering Information: SC-75A (SOT– 416): Si1013R–Marking Code : D SC-89 (SOT– 490): Si1013X–Marking Code: B Top View 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 TA = 25_C TA = 85_C TA = 25_C for SC-89 TA = 85_C TJ, Tstg ESD PD TA = 25_C TA = 85_C ID IDM IS –275 175 90 275 160 –55 to 150 2000 Symbol VDS VGS 5 secs Steady State –20 "6 Unit V –400 –300 –1000 –350 –275 mA –250 150 80 250 140 _C V mW Maximum Power Dissipationb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board. Document Number: 71167 S-02464—Rev. A, 25-Oct-00 www.vishay.com 1 Si1013R/X Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "4.5 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –350 mA Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –300 m A VGS = –1.8 V, ID = –150 m A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = –10 V, ID = –250 mA IS = –150 mA, VGS = 0 V –700 0.8 1.2 1.8 0.4 –0.8 –1.2 1.2 1.6 2.7 S V W –0.45 "1 –0.3 "2 –100 –5 V mA nA mA mA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –10 V, RL = 47 W ID ^ –200 mA, VGEN = –4.5 V, RG = 10 W VDS = –10 V, VGS = –4.5 V, ID = –250 mA 1500 150 450 5 9 35 11 ns pC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Output Characteristics 1.0 VGS = 5 thru 3 V 0.8 I D – Drain Current (mA) I D – Drain Current (A) 2.5 V 800 1000 Transfer Characteristics TJ = –55_C 25_C 0.6 2V 0.4 1.8 V 600 125_C 400 0.2 200 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71167 S-02464—Rev. A, 25-Oct-00 Si1013R/X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) On-Resistance vs. Drain Current 4.0 r DS(on) – On-Resistance ( W ) 120 Vishay Siliconix Capacitance VGS = 1.8 V 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V 0.8 C – Capacitance (pF) 3.2 100 Ciss 80 60 40 Coss 20 Crss 0 0.0 0 200 400 600 800 1000 0 4 8 12 16 20 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA 4 1.6 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance ( W) (Normalized) 1.4 VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 3 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 –50 –25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 1000 IS – Source Current (mA) TJ = 125_C r DS(on) – On-Resistance ( W ) 4 5 On-Resistance vs. Gate-to-Source Voltage 100 TJ = 25_C TJ = –55_C 10 3 ID = 350 mA 2 ID = 200 mA 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71167 S-02464—Rev. A, 25-Oct-00 www.vishay.com 3 Si1013R/X Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS – (mA) 2.5 2.0 VGS = 4.5 V –0.0 1.5 –0.1 1.0 –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 125 0.0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) TJ – Temperature (_C) BVGSS vs. Temperature BVGSS – Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =833_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71167 S-02464—Rev. A, 25-Oct-00 Si1013R/X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71167 S-02464—Rev. A, 25-Oct-00 www.vishay.com 5