SI1016CX

New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V N-Channel 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V 0.756 at VGS = - 4.5 V P-Channel - 20 1.038 at VGS = - 2.5 V 1.440 at VGS = - 1.8 V 2.4 at VGS = - 1.5 V ID (A) 0.5 0.2 0.2 0.05 - 0.35 - 0.35 - 0.1 - 0.05 1 nC 0.75 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • High-Side Switching • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Typical ESD Protection: N-Channel 1500 V P-Channel 1000 V (HBM) • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch, Small Signal Switches and Level-Shift Switches - Battery Operated Systems - Portable SOT-563 SC-89 S1 1 6 D1 D1 S2 G1 G1 2 5 G2 S2 Marking Code: 5 G2 D2 3 4 Top View Ordering Information: Si1016CX-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 0.6a, b 0.49a, b 2 0.18a, b 0.22a, b 0.14a, b - 55 to 150 260 N-Channel 20 ±8 - 0.6a, b - 0.49a, b - 1.5 - 0.18a, b 0.22a, b 0.14a, b W °C A P-Channel - 20 Unit V THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambient a, c P-Channel Typ. 470 560 Max. 565 675 Unit °C/W Symbol t5s Steady State RthJA Typ. 470 560 Max. 565 675 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 675 °C/W. Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1016CX Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage VDS VDS/TJ VGS(th)/TJ VGS(th) VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = - 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 0.5 A VGS = - 4.5 V, ID = - 0.35 A VGS = 2.5 V, ID = 0.2 A Drain-Source On-State Resistanceb RDS(on) VGS = - 2.5 V, ID = - 0.35 A VGS = 1.8 V, ID = 0.2 A VGS = - 1.8 V, ID = - 0.1 A VGS = 1.5 V, ID = 0.05 A VGS = - 1.5 V, ID = - 0.05 A Forward Transconductanceb Input Capacitance Output Capacitance Reverse Transfer Capacitance Dynamica VDS = 10 V, VGS = 4.5 V, ID = 0.6 A Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 0.4 A N-Channel VDS = 10 V, VGS = 2.5 V, ID = 0.6 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 10 V, VGS = - 2.5 V, ID = - 0.4 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch f = 1 MHz N-Ch P-Ch 2.4 2.4 1.3 1.65 0.75 1 0.15 0.2 0.13 0.26 12.2 12 24.4 24  2 2.50 1.2 2 nC gfs Ciss Coss Crss P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 0.5 A VDS = - 10 V, ID = - 3.6 A N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 - 1.5 0.330 0.630 0.380 0.865 0.420 1.2 0.505 1.6 2 1 43 45 14 15 8 10 pF 0.396 0.756 0.456 1.038 0.546 1.44 0.760 2.4 S  0.4 - 0.4 20 - 20 17 - 12 - 1.8 1.8 1 -1 ±1 ±1 ± 30 ± 30 1 -1 10 - 10 A µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1016CX Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time ISM VSD trr Qrr ta tb N-Channel IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 0.3 A, dI/dt = - 100 A/µs, TJ = 25 °C IS = 0.5 A, VGS = 0 V IS = - 3.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.85 - 0.87 10 16 2 8 5 11 5 5 ns 2 - 1.5 1.2 - 1.2 20 24 4 20 A V ns nC td(on) tr td(off) tf td(on) tr td(off) tf N-Ch N-Channel VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  P-Channel VDD = - 10 V, RL = 33.3  ID  - 0.3 A, VGEN = - 4.5 V, Rg = 1  P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 8 V, Rg = 1  P-Channel VDD = - 10 V, RL = 33.3  ID  - 0.3 A, VGEN = - 8 V, Rg = 1  P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11 9 16 10 26 10 11 8 2 1 13 8 7 9 5 5 20 18 24 20 39 20 20 16 4 2 20 16 14 18 10 10 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1016CX Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 1.0E-04 1.0E-05 IGSS - Gate Current (mA) 0.6 IGSS - Gate Current (A) TJ = 150 °C 1.0E-06 TJ = 25 °C 0.4 TJ = 25 °C 1.0E-07 0.2 1.0E-08 0 0 2 4 6 8 10 12 14 1.0E-09 0 4 7 11 14 VGS - Gate-to-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 2 0.5 Gate Current vs. Gate-Source Voltage VGS = 5 V thru 2 V 1.5 0.4 ID - Drain Current (A) ID - Drain Current (A) 0.3 1 VGS = 1.5 V TC = 25 °C 0.2 0.5 0.1 VGS = 1 V 0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 0 0 0.3 0.6 0.9 1.2 1.5 TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Output Characteristics 0.80 VGS = 1.5 V RDS(on) - On-Resistance (Ω) VGS = 1.8 V 0.60 C - Capacitance (pF) Transfer Characteristics 60 Ciss 45 30 Coss 15 VGS = 2.5 V 0.40 VGS = 4.5 V Crss 0.20 0 0.5 1 ID - Drain Current (A) 1.5 2 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance www.vishay.com 4 Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1016CX Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 ID = 0.6 A 1.6 ID = 0.5 A VDS = 5 V VDS = 10 V RDS(on) - On-Resistance (Normalized) VGS = 4.5 V VGS - Gate-to-Source Voltage (V) 6 1.4 1.2 4 VDS = 16 V 2 1.0 0.8 VGS = 2.5 V 0 0 0.5 1 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 10 On-Resistance vs. Junction Temperature 0.8 ID = 0.5 A RDS(on) - On-Resistance (Ω) 0.6 IS - Source Current (A) TJ = 150 °C 1 0.4 TJ = 125 °C TJ = 25 °C TJ = 25 °C 0.2 0.1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.7 0.75 ID = 250 μA 0.65 2.25 1.8 0.55 Power (W) VGS(th) (V) 1.35 0.9 0.45 0.45 0.35 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1016CX Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.24 Limited by RDS(on)* ID - Drain Current (A) 1 BVDSS Limited 100 μs 1 ms 10 ms Power (W) 0.18 0.12 0.1 0.06 100 ms TC = 25 °C Single Pulse 0.01 0.1 1 10 1s 10 s, DC 100 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 t1 Notes: PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 675 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 6 Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1016CX Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.010 1.E-04 0.008 IGSS - Gate Current (mA) IGSS - Gate Current (A) 1.E-05 TJ = 150 °C 1.E-06 0.006 0.004 TJ = 25 °C 0.002 TJ = 25 °C 1.E-07 0.000 0 3 6 9 12 VGS - Gate-Source Voltage (V) 1.E-08 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 1.5 VGS = 5 V thru 3 V 1.2 ID - Drain Current (A) VGS = 2.5 V ID - Drain Current (A) 0.8 0.6 0.9 VGS = 2 V 0.6 0.4 0.3 VGS = 1.5 V 0.2 TC = 25 °C TC = 125 °C 0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 TC = - 55 °C 1.6 2 VGS - Gate-to-Source Voltage (V) Output Characteristics 2 90 Transfer Characteristics RDS(on) - On-Resistance (Ω) C - Capacitance (pF) 1.5 VGS = 1.8 V VGS = 1.5 V 72 54 Ciss 36 1 VGS = 2.5 V 0.5 VGS = 4.5 V 18 Crss Coss 0 0 0.3 0.6 0.9 1.2 1.5 0 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1016CX Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 ID = 0.4 A 6 RDS(on) - On-Resistance (Normalized) 1.5 ID = 0.35 A VGS - Gate-to-Source Voltage (V) VGS = 2.5 V VDS = 5 V 1.3 VGS = 4.5 V 1.1 4 VDS = 10 V VDS = 16 V 2 0.9 0 0 0.45 0.9 1.35 1.8 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 10 1.2 On-Resistance vs. Junction Temperature ID = 0.35 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 1.0 TJ = 150 °C TJ = 125 °C 0.8 1 TJ = 25 °C TJ = 25 °C 0.6 0.1 0.0 0.4 0.3 0.6 0.9 1.2 1.5 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.7 2.7 On-Resistance vs. Gate-to-Source Voltage 2.25 0.6 1.8 Power (W) VGS(th) (V) 0.5 ID = 250 μA 1.35 0.9 0.4 0.45 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com 8 Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1016CX Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 Limited by RDS(on)* 1 ID - Drain Current (A) 100 μs 1 ms 0.1 10 ms 100 ms 0.01 TC = 25 °C Single Pulse 0.001 0.1 1 BVDSS Limited 0 10 100 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TA - Ambient Temperature (°C) 1s 10 s, DC 0.18 0.24 Power (W) 0.12 0.06 Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 t1 Notes: PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 675 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67535. Document Number: 67535 S11-0655-Rev. A, 11-Apr-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SC89: 6 LEADS (SOT 563F) 2 3 D E1/2 4 aaa C e1 A 2X 4 D B E/2 E 2 3 E1 2X aaa C 5 1 2 3 2X bbb C e B 4 6X b ccc M C A–B D A1 L1 L A A1 SEE DETAIL “A” MILLIMETERS Dim A A1 b c D E E1 e e1 L L1 Min 0.56 0.00 0.15 0.10 1.50 1.55 Max 0.60 0.10 0.30 0.18 1.70 1.70 NOTES: 1. 2. 2 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. Datums A, B and D to be determined 0.10 mm from the lead tip. Terminal numbers are shown for reference only. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 3. 3 1.20 BSC 0.50 BSC 1.00 BSC 0.35 BSC 0.20 BSC 4 4. 5. 5 6. 6 ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 Document Number: 71612 25-Jun-01 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ DETAIL “A” ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ 6 5 4 SECTION B-B C 6 ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ Note Symbol aaa bbb ccc Tolerances Of Form And Position 0.10 0.10 0.10 2, 3 2, 3 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) (1.753) 0.012 (0.300) 0.051 (0.201) 0.020 (0.500) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.798) 0.069 0.031 (0.478) 0.019 APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1