SI1016X

Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.70 @ VGS = 4.5 V 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V 1.2 @ VGS = –4.5 V 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V ID (mA) 600 500 350 –400 –300 –150 P-Channel –20 FEATURES D Very Small Footprint D High-Side Switching D Low On-Resistance: N-Channel, 0.7 W P-Channel, 1.2 W D Low Threshold: "0.8 V (typ) D Fast Swtiching Speed: 14 ns D 1.8-V Operation D Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D D D D Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers SOT-563 SC-89 S1 1 6 D1 Marking Code: A G1 2 5 G2 D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs "6 Symbol VDS VGS 5 secs Steady State 20 Steady State –20 Unit V 515 ID IDM IS PD TJ, Tstg ESD 450 280 145 370 650 485 350 –390 –280 –650 –370 –265 mA –380 250 130 mW _C V 380 250 130 –55 to 150 2000 –450 280 145 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71168 S-03104—Rev. A, 08-Feb-01 www.vishay.com 1 Si1016X Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "4.5 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = –16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = –16 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = –5 V, VGS = –4.5 V VGS = 4.5 V, ID = 600 mA VGS = –4.5 V, ID = –350 mA Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 500 mA VGS = –2.5 V, ID = –300 mA VGS = 1.8 V, ID = 350 mA VGS = –1.8 V, ID = –150 mA Forward Transconductancea gfs VDS = 10 V, ID = 400 mA VDS = –10 V, ID = –250 mA IS = 150 mA, VGS = 0 V IS = –150 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 700 –700 0.41 0.80 0.53 1.20 0.70 1.80 1.0 0.4 0.8 –0.8 1.2 –1.2 V S 0.70 1.2 0.85 1.6 1.25 2.7 W mA 0.45 V –0.45 "0.5 "1.0 0.3 –0.3 "1.0 "2.0 100 –100 5 –5 nA mA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS mA Diode Forward Voltagea VSD Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA Gate-Source Charge Qgs P-Channel VDS = –10 V, VGS = –4.5 V, ID = –250 mA P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W P-Channel VDD = –10 V, RL = 47 W ID ^ –200 A, VGEN = –4.5 V, RG = 10 W N-Ch P-Ch N-Ch P-Ch 750 1500 75 pC 150 225 450 5 5 ns 25 35 Turn-Off Time tOFF Gate-Drain Charge Qgd Turn-On Time tON Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71168 S-03104—Rev. A, 08-Feb-01 Si1016X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 1.0 1200 TC = –55_C 25_C I D – Drain Current (A) 0.6 ID - Drain Current (mA) VGS = 5 thru 1.8 V 800 125_C Vishay Siliconix N CHANNEL Transfer Characteristics 0.8 1000 600 0.4 400 0.2 1V 0.0 0.0 200 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 4.0 r DS(on) – On-Resistance ( W ) 100 Capacitance 2.4 C – Capacitance (pF) 3.2 80 Ciss VGS = 0 V f = 1 MHz 60 1.6 VGS = 1.8 V 0.8 VGS = 2.5 V VGS = 4.5 V 0.0 0 200 400 600 800 1000 40 Coss Crss 0 0 4 8 12 16 20 20 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA 4 1.60 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance ( W) (Normalized) 1.40 VGS = 4.5 V ID = 350 mA 3 1.20 VGS = 1.8 V ID = 150 mA 1.00 2 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 –50 –25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) Document Number: 71168 S-03104—Rev. A, 08-Feb-01 TJ – Junction Temperature (_C) www.vishay.com 3 Si1016X Vishay Siliconix New Product N CHANNEL On-Resistance vs. Gate-to-Source Voltage 5 TJ = 125_C r DS(on) – On-Resistance ( W ) I S – Source Current (mA) 4 ID = 350 mA 3 ID = 200 mA 2 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 100 TJ = 25_C 10 TJ = 50_C 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS – (mA) 2.5 2.0 –0.0 1.5 –0.1 1.0 VGS = 4.5 V –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 125 0.0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) TJ – Temperature (_C) BVGSS vs. Temperature BVGSS – Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) www.vishay.com Document Number: 71168 S-03104—Rev. A, 08-Feb-01 4 Si1016X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 5 thru 3 V 0.8 I D – Drain Current (A) I D – Drain Current (mA) 2.5 V 800 1000 TJ = –55_C 25_C Vishay Siliconix P CHANNEL Transfer Characteristics 0.6 2V 0.4 1.8 V 600 125_C 400 0.2 200 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 4.0 r DS(on) – On-Resistance ( W ) VGS = 1.8 V 3.2 C – Capacitance (pF) 120 Capacitance VGS = 0 V f = 1 MHz 100 Ciss 80 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V 0.8 60 40 Coss 20 Crss 0 4 8 12 16 20 0.0 0 200 400 600 800 1000 0 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA r DS(on) – On-Resistance ( W) (Normalized) 4 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 3 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 –50 –25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71168 S-03104—Rev. A, 08-Feb-01 www.vishay.com 5 Si1016X Vishay Siliconix New Product P CHANNEL On-Resistance vs. Gate-to-Source Voltage 5 TJ = 125_C r DS(on) – On-Resistance ( W ) 4 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 IS – Source Current (mA) 100 TJ = 25_C TJ = –55_C 10 3 ID = 350 mA 2 ID = 200 mA 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS – (mA) 2.5 2.0 VGS = 4.5 V –0.0 1.5 –0.1 1.0 –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 125 0.0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) TJ – Temperature (_C) BVGSS vs. Temperature BVGSS – Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) www.vishay.com Document Number: 71168 S-03104—Rev. A, 08-Feb-01 6 Si1016X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N OR P CHANNEL 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =500_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Document Number: 71168 S-03104—Rev. A, 08-Feb-01 www.vishay.com 7